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Register a new userEffect of synthesis temperature on superconducting properties of n-SiC added bulk MgB2 superconductor
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We study the effect of synthesis temperature on the phase formation in nano(n)-SiC added bulk MgB2 superconductor. In particular we study: lattice parameters, amount of carbon (C) substitution, microstructure, critical temperature (Tc), irreversibility field (Hirr), critical current density (Jc), upper critical field (Hc2) and flux pinning. Samples of MgB2+(n-SiC)x with x=0.0, 0.05 & 0.10 were prepared at four different synthesis temperatures i.e. 850, 800, 750, and 700oC with the same heating rate as 10oC/min. We found 750oC as the optimal synthesis temperature for n-SiC doping in bulk MgB2 in order to get the best superconducting performance in terms of Jc, Hc2 and Hirr. Carbon (C) substitution enhances the Hc2 while the low temperature synthesis is responsible for the improvement in Jc due to the smaller grain size, defects and nano-inclusion induced by C incorporation into MgB2 matrix, which is corroborated by elaborative HRTEM (high-resolution transmission electron microscopy) results. We optimized the the Tc(R=0) of above 15K for the studied n-SiC doped and 750 0C synthesized MgB2 under 140 KOe field, which is one of the highest values yet obtained for variously processed and nano-particle added MgB2 in literature to our knowledge.
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We report the effect of adipic acid (C6H10O4) doping on lattice parameters, microstructure, critical temperature (Tc), current density (Jc), and irreversibility field (Hirr) for MgB2 superconductor. Actual carbon (C) substitution level for boron (B) is estimated to be from 0.40 percent to 2.95 percent for different doping levels. A reduction in Tc from 38.43 to 34.93 K and in lattice parameter a from 3.084(3) A to 3.075(6) Ais observed for the10 wt percent C6H10O4 doped sample in comparison to pristine MgB2. This is an indication of C substitution at boron sites, with the C coming from the decomposition of C6H10O4 at the time of reaction. Interestingly the doped samples have resulted in significant enhancement of Jc and Hirr. All the doped samples exhibit the Jc value of the order of 10^4 A/cm2 at 5 K and 8 T, which is higher by an order of magnitude as compared to undoped sample. This result indicates that C6H10O4 is a promising material for MgB2 for obtaining the excellent Jc values under higher magnetic fields.
High quality bulk MgB2 exhibit a structure of voids and agglomeration of crystals on different length-scales. Because of this, the superconducting currents percolate between the voids in the ensuing structure. Magnetic measurements reveal that the superconducting currents circulate on at least three different length-scales, of ~1 micrometre, ~10 micrometre and whole of the sample (~millimetre). Each of these screenings contributes to the measured irreversible magnetic moment (Dm). The analysis of the field dependence of Dm for samples of subsequently decreasing size showed that the critical current obtained using the simple critical state model is erroneous. This leads to the artefact of the sample size-dependent critical current and irreversibility field. Our data analysis enables the separation of the contribution of each of the screening currents to Dm. The field dependence of each of the currents follows a stretched exponential form. The currents flowing around whole of the sample give a dominant contribution to Dm in the intermediate fields (1T < H < 4T at 20K) and they can be used to obtain the value of Jc from critical state model, which corresponds to the transport Jc.
Iron is an important sheath material for fabrication of MgB2 wires. However, the effect of Fe doping on the superconducting properties of MgB2 remains controversial. In this work, we present results of nano-scale Fe particle doping in to MgB2. The Fe doping experiments were performed using both bulk and thin film form. It was found that Fe doping did not affect the lattice parameters of MgB2, as evidenced by the lack of change in the XRD peak positions for MgB2. Because of the high reactivity of nano-scale Fe particles, Fe doping is largely in the form of FeB at low doping level while Fe2B was detected at 10wt% doping by both XRD and TEM. There is no evidence for Fe substitution for Mg. The transition temperature decreased modestly with increasing Fe doping levels. The Jc(H) performance was severely depressed at above 3wt% doping level. The detrimental effect of nano-scale Fe doping on both Tc and Jc(H) is attributable to the grain decoupling as a result of magnetic scattering of Fe-containing dopants at grain boundaries.
We study the effect of nano(n)-SiC addition on the crystal structure, critical temperature (Tc), critical current density (Jc) and flux pinning in MgB2 superconductor. X-ray diffraction patterns show that all the samples have MgB2 as the main phase with very small amount of MgO, further with n-SiC addition the presence of Mg2Si is also noted and confirmed by SEM & EDS. The Tc value for the pure MgB2 is 18.9K under 8 Tesla applied field, while is 20.8K for the 10-wt % n-SiC doped sample under the same field. This points towards the increment in upper-critical field value with n-SiC addition. The irreversibility field (Hirr) for the 5% n-SiC added sample reached 11.3, 10 and 5.8 Tesla, compared to 7.5, 6.5, and 4.2 Tesla for the pure MgB2 at 5, 10 and 20K respectively. The critical current density (Jc) for the 5-wt % n-SiC added sample is increased by a factor of 35 at 10K and 6.5 Tesla field and by a factor 20 at 20K and 4.2 Tesla field. These results are understood on the basis of superconducting condensate (sigma band) disorder and ensuing intrinsic pining due to B site C substitution clubbed with further external pinning due to available n-SiC/Mg2Si pins in the composite system.
We have developed disk-shaped MgB2 bulk superconducting magnets (20, 30 mm in diameter, 10 mm in thickness) using the in-situ process from Mg and B powders and evaluated the temperature dependence of trapped magnetic field. A pair of two disc-shaped bulks of 30 mm in diameter and 10 mm in thickness magnetized by field-cooling condition showed trapped fields of 1.2, 2.8 and 3.1 T at 30, 20 and 17.5 K, respectively. High trapped field over 3 T was recorded for the first time.
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