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Undulation instabilities in the meniscus of smectic membranes

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 Added by Pedro Patricio
 Publication date 2010
  fields Physics
and research's language is English




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Using optical microscopy, phase shifting interferometry and atomic force microscopy, we demonstrate the existence of undulated structures in the meniscus of ferroelectric smectic-C* films. The meniscus is characterized by a periodic undulation of the smectic-air interface, which manifests itself in a striped pattern. The instability disappears in the untilted smectic-A phase. The modulation amplitude and wavelength both depend on meniscus thickness. We study the temperature evolution of the structure and propose a simple model that accounts for the observed undulations.

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We present an x-ray study of liquid crystal membranes in the vicinity of hexatic-smectic phase transition by means of angular x-ray cross-correlation analysis (XCCA). By applying two-point angular intensity cross-correlation functions to the measured series of diffraction patterns the parameters of bond-orientational (BO) order in hexatic phase were directly determined. The temperature dependence of the positional correlation lengths was analyzed as well. The obtained correlation lengths show larger values for the higher-order Fourier components of BO order. These findings indicate a strong coupling between BO and positional order that has not been studied in detail up to now.
108 - Karl Saunders 2011
Using a generalized Landau theory involving orientational, layering, tilt, and biaxial order parameters we analyze the smectic-A* and smectic-C* (Sm-A* -- Sm-C*) transition, showing that a combination of small orientational order and large layering order leads to Sm-A* -- Sm-C* transitions that are either continuous and close to tricriticality or first order. The model predicts that in such systems the increase in birefringence upon entry to the Sm-C* phase will be especially rapid. It also predicts that the change in layer spacing at the Sm-A* -- Sm-C* transition will be proportional to the orientational order. These are two hallmarks of Sm-A* -- Sm-C* transitions in de Vries materials. We analyze the electroclinic effect in the Sm-A* phase and show that as a result of the zero-field Sm-A* -- Sm-C* transition being either continuous and close to tricriticality or first order (i.e for systems with a combination of weak orientational order and strong layering order) the electroclinic response of the tilt will be unusually strong. Additionally, we investigate the associated electrically induced change in birefringence and layer spacing, demonstrating de Vries behavior for each, i.e. an unusually large increase in birefringence and an unusually small layer contraction. Both the induced change in birefringence and layer spacing are shown to scale quadratically with the induced tilt angle.
We observed undulated smectic textures for some compounds of the 4,n-alkyloxybenzoic (nOBAC) acid series, at transitions between the smectic and the isotropic phase and between the smectic and nematic phase. Studied compounds were 12OBAC, 16OBAC and a binary mixture of 12- and 16OBAC. The undulations are dressing a usual Schlieren texture. In the case of the binary mixture, an interesting fingerprint pattern is observed too.
A high-resolution calorimetric study has been carried out on nano-colloidal dispersions of aerosils in the liquid crystal 4-textit{n}-pentylphenylthiol-4-textit{n}-octyloxybenzoate ($bar{8}$S5) as a function of aerosil concentration and temperature spanning the smectic-textit{C} to nematic phases. Over this temperature range, this liquid crystal possesses two continuous XY phase transitions: a fluctuation dominated nematic to smectic-textit{A} transition with $alpha approx alpha_{XY} = -0.013$ and a mean-field smectic-textit{A} to smectic-textit{C} transition. The effective critical character of the textit{N}-Smtextit{A} transition remains unchanged over the entire range of introduced quenched random disorder while the peak height and enthalpy can be well described by considering a cut-off length scale to the quasi-critical fluctuations. The robust nature of the textit{N}-Smtextit{A} transition in this system contrasts with cyanobiphenyl-aerosil systems and may be due to the mesogens being non-polar and having a long nematic range. The character of the Smtextit{A}-Smtextit{C} transition changes gradually with increasing disorder but remains mean-field-like. The heat capacity maximum at the Smtextit{A}-Smtextit{C} transition scales as $rho_S^{-0.5}$ with an apparent evolution from tricritical to a simple mean-field step behavior. These results may be generally understood as a stiffening of the liquid crystal (both the nematic elasticity as well as the smectic layer compression modulus $B$) with silica density.
We analyze the surface electroclinic effect (SECE) in a material that exhibits a first order bulk smectic-$A^*$ (Sm-$A^*$) -- smectic-$C^*$ (Sm-$C^*$) transition. The effect of a continuously varying degree of enantiomeric excess on the SECE is also investigated. We show that due to the first order nature of the bulk Sm-$A^*$ -- Sm-$C^*$ transition, the SECE can be unusually strong and that as enantiomeric excess is varied, a jump in surface induced tilt is expected. A theoretical state map, in enantiomeric excess - temperature space, features a critical point which terminates a line of first order discontinuities in the surface induced tilt. This critical point is analogous to that found for the phase diagram (in electric field - temperature space) for the bulk electroclinic effect. Analysis of the decay of the surface induced tilt, as one moves from surface into bulk shows that for sufficiently high surface tilt the decay will exhibit a well defined spatial kink within which it becomes especially rapid. We also propose that the SECE is additionally enhanced by the de Vries nature (i.e. small layer shrinkage at the bulk Sm-A* -- Sm-C* transition) of the material. As such the SECE provides a new means to characterize the de Vries nature of a material. We discuss the implications for using these materials in device applications and propose ways to investigate the predicted features experimentally.
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