Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userSingle Layer Behavior and Its Breakdown in Twisted Graphene Layers
336
0
0.0
(
0
)
Ask ChatGPT about the research
No Arabic abstract
We report high magnetic field scanning tunneling microscopy and Landau level spectroscopy of twisted graphene layers grown by chemical vapor deposition. For twist angles exceeding ~3 degrees the low energy carriers exhibit Landau level spectra characteristic of massless Dirac fermions. Above 20 degrees the layers effectively decouple and the electronic properties are indistinguishable from those in single layer graphene, while for smaller angles we observe a slow-down of the carrier velocity which is strongly angle dependent. At the smallest angles the spectra are dominated by twist induced Van Hove singularities and the Dirac fermions eventually become localized. An unexpected electron-hole asymmetry is observed which is substantially larger than the asymmetry in either single or untwisted bilayer graphene.
rate research
Read More
We report on low-temperature transport study of a single layer graphene (SLG)-twisted bilayer graphene (tBLG) junction device. The SLG-tBLG junction in the device is grown by chemical vapor deposition and the device is fabricated in a Hall-bar configuration on Si/SiO$_2$ substrate. The longitudinal resistances across the SLG-tBLG junction (cross-junction resistances) on the two sides of the Hall bar and the Hall resistances of SLG and tBLG in the device are measured. In the quantum Hall regime, the measurements show that the measured cross-junction resistances exhibit a series of new quantized plateaus and the appearance of these resistance plateaus can be attributed to the presence of the well-defined edge-channel transport along the SLG-tBLG junction interface. The measurements also show that the difference between the cross-junction resistances measured on the two sides of the Hall-bar provides a sensitive measure to the edge channel transport characteristics in the two graphene layers that constitute the SLG-tBLG junction and to degeneracy lifting of the Landau levels in the tBLG layer. Temperature dependent measurements of the cross-junction resistance in the quantum Hall regime are also carried out and the influence of the transverse transport of the bulk Landau levels on the edge channel transport along the SLG-tBLG junction interface are extracted. These results enrich the understanding of the charge transport across interfaces in graphene hybrid structures and open up new opportunities for probing exotic quantum phenomena in graphene devices.
Twisted bi-layer graphene (tBLG) has recently attracted interest due to the peculiar electrical properties that arise from its random rotational configurations. Our experiments on CVD-grown graphene from Cu foil and transferred onto Si substrates, with an oxide layer of 100 nm, reveal naturally-produced bi-layer graphene patches which present different colorations when shined with white light. In particular yellow-, pink- and blue- colored areas are evidenced. Combining optical microscopy, Raman spectroscopy and transmission electron microscopy we have been able to assign these colorations to ranges of rotational angles between the two graphene layers. Optical contrast simulations have been carried out, proving that the observation of the different colorations is due to the angle-dependent electronic properties of tBLG combined with the reflection that results from the layered structure tBLG / 100 nm-thick SiO2 / Si. Our results could lead the way to an easy selective identification of bi-layer graphene merely through the observation on an optical microscope.
Electronic instabilities at the crossing of the Fermi energy with a Van Hove singularity in the density of states often lead to new phases of matter such as superconductivity, magnetism or density waves. However, in most materials this condition is difficult to control. In the case of single-layer graphene, the singularity is too far from the Fermi energy and hence difficult to reach with standard doping and gating techniques. Here we report the observation of low-energy Van Hove singularities in twisted graphene layers seen as two pronounced peaks in the density of states measured by scanning tunneling spectroscopy. We demonstrate that a rotation between stacked graphene layers can generate Van Hove singularities, which can be brought arbitrarily close to the Fermi energy by varying the angle of rotation. This opens intriguing prospects for Van Hove singularity engineering of electronic phases.
Control over minivalley polarization and interlayer coupling is demonstrated in double bilayer graphene twisted with an angle of 2.37$^circ$. This intermediate angle is small enough for the minibands to form and large enough such that the charge carrier gases in the layers can be tuned independently. Using a dual-gated geometry we identify and control all possible combinations of minivalley polarization via the population of the two bilayers. An applied displacement field opens a band gap in either of the two bilayers, allowing us to even obtain full minivalley polarization. In addition, the wavefunctions of the minivalleys are mixed by tuning through a Lifshitz transition, where the Fermi surface topology changes. The high degree of control makes twisted double bilayer graphene a promising platform for valleytronics devices such as valley valves, filters and logic gates.
Van der Waals (vdW) assembly of two-dimensional materials has been long recognized as a powerful tool to create unique systems with properties that cannot be found in natural compounds. However, among the variety of vdW heterostructures and their various properties, only a few have revealed metallic and ferroelectric behaviour signatures. Here we show ferroelectric semimetal made of double-gated double-layer graphene separated by an atomically thin crystal of hexagonal boron nitride, which demonstrating high room temperature mobility of the order of 10 m$^2$V$^{-1}$s$^{-1}$ and exhibits robust ambipolar switching in response to the external electric field. The observed hysteresis is tunable, reversible and persists above room temperature. Our fabrication method expands the family of ferroelectric vdW compounds and offers a route for developing novel phase-changing devices.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
