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Spin polarization of (Ga,Mn)As measured by Andreev Spectroscopy: The role of spin-active scattering

178   0   0.0 ( 0 )
 Added by Samanta Piano
 Publication date 2010
  fields Physics
and research's language is English




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We investigate the spin-polarization of the ferromagnetic semiconductor (Ga,Mn)As by point contact Andreev reflection spectroscopy. The conductance spectra are analyzed using a recent theoretical model that accounts for momentum- and spin-dependent scattering at the interface. This allows us to fit the data without resorting, as in the case of the standard spin-dependent Blonder-Tinkham-Klapwijk (BTK) model, to an effective temperature or a statistical distribution of superconducting gaps. We find a transport polarization PC{approx}57%, in considerably better agreement with the k{cdot}p kinetic-exchange model of (Ga,Mn)As, than the significantly larger estimates inferred from the BTK model. The temperature dependence of the conductance spectra is fully analyzed.

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197 - L. Dreher , C. Bihler , E. Peiner 2013
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176 - M.Elsen , H. Jaffres , R. Mattana 2007
We present magnetic and tunnel transport properties of (Ga,Mn)As/(In,Ga)As/(Ga,Mn)As structure before and after adequate annealing procedure. The conjugate increase of magnetization and tunnel magnetoresistance obtained after annealing is shown to be associated to the increase of both exchange energy $Delta$$_{exch}$ and hole concentration by reduction of the Mn interstitial atom in the top magnetic electrode. Through a 6x6 band k.p model, we established general phase diagrams of tunneling magnetoresistance (TMR) and tunneling anisotropic magnetoresistance (TAMR) textit{vs.} (Ga,Mn)As Fermi energy (E$_F$) and spin-splitting parameter (B$_G$). This allows to give a rough estimation of the exchange energy $Delta$$_{exch}$=6B$_G$$simeq$120 meV and hole concentration p$simeq1.10^{20}$cm$^{-3}$ of (Ga,Mn)As and beyond gives the general trend of TMR and TAMR textit{vs.} the selected hole band involved in the tunneling transport.
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