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Register a new userOn the structure and topography of free-standing chemically modified graphene
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The mechanical, electrical and chemical properties of chemically modified graphene (CMG) are intrinsically linked to its structure. Here we report on our study of the topographic structure of free-standing CMG using atomic force microscopy and electron diffraction. We find that, unlike graphene, suspended sheets of CMG are corrugated and distorted on nanometre length scales. AFM reveals not only long range (100 nm) distortions induced by the support, as previously observed for graphene, but also short-range corrugations with length scales down to the resolution limit of 10 nm. These corrugations are static not dynamic, and are significantly diminished on CMG supported on atomically smooth substrates. Evidence for even shorter range distortions, down to a few nanometres or less, is found by electron diffraction of suspended CMG. Comparison of the experimental data with simulations reveals that the mean atomic displacement from the nominal lattice position is of order 10% of the carbon-carbon bond length. Taken together, these results suggest a complex structure for chemically modified graphene where heterogeneous functionalisation creates local strain and distortion.
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Chemical functionalization of graphene modifies the local electron density of the carbon atoms and hence electron transport. Measuring these changes allows for a closer understanding of the chemical interaction and the influence of functionalization on the graphene lattice. However, not only chemistry, in this case diazonium chemistry, has an effect on the electron transport. Latter is also influenced by defects and dopants resulting from different processing steps. Here, we show that solvents used in the chemical reaction process change the transport properties. In more detail, the investigated combination of isopropanol and heating treatment reduces the doping concentration and significantly increases the mobility of graphene. Furthermore, the isopropanol treatment alone increases the concentration of dopants and introduces an asymmetry between electron and hole transport which might be difficult to distinguish from the effect of functionalization. The results shown in this work demand a closer look on the influence of solvents used for chemical modification in order to understand their influence.
One of the most exciting phenomena observed in crystalline disordered membranes, including a suspended graphene, is rippling, i.e. a formation of static flexural deformations. Despite an active research, it still remains unclear whether the rippled phase exists in the thermodynamic limit, or it is destroyed by thermal fluctuations. We demonstrate that a sufficiently strong short-range disorder stabilizes ripples, whereas in the case of a weak disorder the thermal flexural fluctuations dominate in the thermodynamic limit. The phase diagram of the disordered suspended graphene contains two separatrices: the crumpling transition line dividing the flat and crumpled phases and the rippling transition line demarking the rippled and clean phases. At the intersection of the separatrices there is the unstable, multicritical point which splits up all four phases. Most remarkably, rippled and clean flat phases are described by a single stable fixed point which belongs to the rippling transition line. Coexistence of two flat phases in the single point is possible due to non-analiticity in corresponding renormalization group equations and reflects non-commutativity of limits of vanishing thermal and rippling fluctuations.
We investigate the morphology of quasi-free-standing monolayer graphene (QFMLG) formed at several temperatures by hydrogen intercalation and discuss its relationship with transport properties. Features corresponding to incomplete hydrogen intercalation at the graphene-substrate interface are observed by scanning tunneling microscopy on QFMLG formed at 600 and 800{deg}C. They contribute to carrier scattering as charged impurities. Voids in the SiC substrate and wrinkling of graphene appear at 1000{deg}C, and they decrease the carrier mobility significantly.
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