Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userScanning Raman spectroscopy of graphene antidot lattices: Evidence for systematic p-type doping
210
0
0.0
(
0
)
Ask ChatGPT about the research
No Arabic abstract
We have investigated antidot lattices, which were prepared on exfoliated graphene single layers via electron-beam lithography and ion etching, by means of scanning Raman spectroscopy. The peak positions, peak widths and intensities of the characteristic phonon modes of the carbon lattice have been studied systematically in a series of samples. In the patterned samples, we found a systematic stiffening of the G band mode, accompanied by a line narrowing, while the 2D mode energies are found to be linearly correlated with the G mode energies. We interpret this as evidence for p-type doping of the nanostructured graphene.
rate research
Read More
The excitation spectrum and the collective modes of graphene antidot lattices (GALs) are studied in the context of a $pi$-band tight-binding model. The dynamical polarizability and dielectric function are calculated within the random phase approximation. The effect of different kinds of disorder, such as geometric and chemical disorder, are included in our calculations. We highlight the main differences of GALs with respect to single-layer graphene (SLG). Our results show that, in addition to the well-understood bulk plasmon in doped samples, inter-band plasmons appear in GALs. We further show that the static screening properties of undoped and doped GALs are quantitatively different from SLG.
Graphene samples can have a very high carrier mobility if influences from the substrate and the environment are minimized. Embedding a graphene sheet into a heterostructure with hexagonal boron nitride (hBN) on both sides was shown to be a particularly efficient way of achieving a high bulk mobility. Nanopatterning graphene can add extra damage and drastically reduce sample mobility by edge disorder. Preparing etched graphene nanostructures on top of an hBN substrate instead of SiO2 is no remedy, as transport characteristics are still dominated by edge roughness. Here we show that etching fully encapsulated graphene on the nanoscale is more gentle and the high mobility can be preserved. To this end, we prepared graphene antidot lattices where we observe magnetotransport features stemming from ballistic transport. Due to the short lattice period in our samples we can also explore the boundary between the classical and the quantum transport regime.
Using low-temperature high-magnetic-field scanning tunneling microscopy and spectroscopy (STM/STS), we systematically study a graphene quantum dot (GQD) defined by a circular graphene p-p junction. Inside the GQD, we observe a series of quasi-bound states arising from whispering-gallery-mode (WGM) confinement of the circular junction and directly visualize these quasi-bound states down to atomic dimensions. By applying a strong magnetic field, a large jump in energy of the quasi-bound states, which is about one-half the energy spacing between the quasi-bound states, is observed. Such a behavior results from turning on a {pi} Berry phase of massless Dirac fermions in graphene by a magnetic field. Moreover, our experiment demonstrates that a quasi-bound state splits into two peaks with an energy separation of about 26 meV when the Fermi level crosses the quasi-bound state, indicating that there are strong electron-electron interactions in the GQD.
We have used resonant Raman scattering spectroscopy to fully analyze the relative abundances of different (n,m) species in single-walled carbon nanotube samples that are metallically enriched by density gradient ultracentrifugation. Strikingly, the data clearly show that our density gradient ultracentrifugation process enriches the metallic fractions in armchair and near-armchair species. We observe that armchair carbon nanotubes constitute more than 50% of each (2n + m) family.
Since lattice strain and charge density affect various material properties of graphene, a reliable and efficient method is required for quantification of the two variables. While Raman spectroscopy is sensitive and non-destructive, its validity towards precise quantification of chemical charge doping has not been tested. In this work, we quantified in-situ the fractional frequency change of 2D and G peaks in response of charge density induced by sulfuric acid solution as well as native lattice strain. Based on the experimental data and theoretical corroboration, we presented an optical method that simultaneously determines strain and chemically-induced charge density for three popular excitation wavelengths of 457, 514 and 633 nm. In order to expedite intercalation of dopant species through the graphene-SiO2 substrates, dense arrays of nanopores were precisely generated in graphene by thermal oxidation. The nano-perforated graphene membrane system was robust for multiple cycles of doping and undoping processes, and will be useful in studying various types of chemical interactions with graphene.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
