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Register a new userLateral piezoelectric response across ferroelectric domain walls in thin films
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In purely c-axis oriented PbZr$_{0.2}$Ti$_{0.8}$O$_3$ ferroelectric thin films, a lateral piezoresponse force microscopy signal is observed at the position of 180{deg}domain walls, where the out-of-plane oriented polarization is reversed. Using electric force microscopy measurements we exclude electrostatic effects as the origin of this signal. Moreover, our mechanical simulations of the tip/cantilever system show that the small tilt of the surface at the domain wall below the tip does not satisfactorily explain the observed signal either. We thus attribute this lateral piezoresponse at domain walls to their sideways motion (shear) under the applied electric field. From simple elastic considerations and the conservation of volume of the unit cell, we would expect a similar lateral signal more generally in other ferroelectric materials, and for all types of domain walls in which the out-of-plane component of the polarization is reversed through the domain wall. We show that in BiFeO$_3$ thin films, with 180, 109 and 71{deg}domain walls, this is indeed the case.
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Surprising asymmetry in the local electromechanical response across a single antiparallel ferroelectric domain wall is reported. Piezoelectric force microscopy is used to investigate both the in-plane and out-of- plane electromechanical signals around domain walls in congruent and near-stoichiometric lithium niobate. The observed asymmetry is shown to have a strong correlation to crystal stoichiometry, suggesting defect-domain wall interactions. A defect-dipole model is proposed. Finite element method is used to simulate the electromechanical processes at the wall and reconstruct the images. For the near-stoichiometric composition, good agreement is found in both form and magnitude. Some discrepancy remains between the experimental and modeling widths of the imaged effects across a wall. This is analyzed from the perspective of possible electrostatic contributions to the imaging process, as well as local changes in the material properties in the vicinity of the wall.
We investigated domain kinetics by measuring the polarization switching behaviors of polycrystalline Pb(Zr,Ti)O$_{3}$ films, which are widely used in ferroelectric memory devices. Their switching behaviors at various electric fields and temperatures could be explained by assuming the Lorentzian distribution of domain switching times. We viewed the switching process under an electric field as a motion of the ferroelectric domain through a random medium, and we showed that the local field variation due to dipole defects at domain pinning sites could explain the intriguing distribution.
In studies using piezoresponse force microscopy, we observe a non-zero lateral piezoresponse at 180$^circ$ domain walls in out-of-plane polarized, c-axis-oriented tetragonal ferroelectric Pb(Zr$_{0.2}$Ti$_{0.8}$)O$_3$ epitaxial thin films. We attribute these observations to a shear strain effect linked to the sign change of the $d_{33}$ piezoelectric coefficient through the domain wall, in agreement with theoretical predictions. We show that in monoclinically distorted tetragonal BiFeO$_3$ films, this effect is superimposed on the lateral piezoresponse due to actual in-plane polarization, and has to be taken into account in order to correctly interpret the ferroelectric domain configuration.
Local conduction at domains and domains walls is investigated in BiFeO3 thin films containing mostly 71o domain walls. Measurements at room temperature reveal conduction through 71o domain walls. Conduction through domains could also be observed at high enough temperatures. It is found that, despite the lower conductivity of the domains, both are governed by the same mechanisms: in the low voltage regime electrons trapped at defect states are temperature-activated but the current is limited by the ferroelectric surface charges; in the large voltage regime, Schottky emission takes place and the role of oxygen vacancies is that of selectively increasing the Fermi energy at the walls and locally reducing the Schottky barrier. This understanding provides the key to engineering conduction paths in oxides.
Magnetic domain walls in thin films can be well analyzed using polarized neutron reflectometry. Well defined streaks in the off-specular spin-flip scattering maps are explained by neutron refraction at perpendicular N{e}el walls. The position of the streaks depends only on the magnetic induction within the domains, whereas the intensity of the off-specular magnetic scattering depends on the spin-flip probability at the domain walls and on the average size of the magnetic domains. This effect is fundamentally different and has to be clearly distinguished from diffuse scattering originating from the size distribution of magnetic domains. Polarized neutron reflectivity experiments were carried out using a $^3$He gas spin-filter with a analyzing power as high as 96% and a neutron transmission of approx 35%. Furthermore, the off-specular magnetic scattering was enhanced by using neutron resonance and neutron standing wave techniques.
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