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Register a new userHybrid superconductor-semiconductor devices made from self-assembled SiGe nanocrystals on silicon
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The epitaxial growth of germanium on silicon leads to the self-assembly of SiGe nanocrystals via a process that allows the size, composition and position of the nanocrystals to be controlled. This level of control, combined with an inherent compatibility with silicon technology, could prove useful in nanoelectronic applications. Here we report the confinement of holes in quantum-dot devices made by directly contacting individual SiGe nanocrystals with aluminium electrodes, and the production of hybrid superconductorsemiconductor devices, such as resonant supercurrent transistors, when the dot is strongly coupled to the electrodes. Charge transport measurements on weakly coupled quantum dots reveal discrete energy spectra, with the confined hole states displaying anisotropic gyromagnetic factors and strong spin-orbit coupling strength with pronounced gate-voltage and magnetic-field dependence.
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Majorana fermions are particles identical to their own antiparticles. They have been theoretically predicted to exist in topological superconductors. We report electrical measurements on InSb nanowires contacted with one normal (Au) and one superconducting electrode (NbTiN). Gate voltages vary electron density and define a tunnel barrier between normal and superconducting contacts. In the presence of magnetic fields of order 100 mT we observe bound, mid-gap states at zero bias voltage. These bound states remain fixed to zero bias even when magnetic fields and gate voltages are changed over considerable ranges. Our observations support the hypothesis of Majorana fermions in nanowires coupled to superconductors.
We present a superconductor-semiconductor material system that is both scalable and monolithically integrated on a silicon substrate. It uses selective area growth of Al-InAs hybrid structures on a planar III-V buffer layer, grown directly on a high resistivity silicon substrate. We characterized the electrical properties of this material system at millikelvin temperatures and observed a high average field-effect mobility of $mu approx 3200,mathrm{cm^2/Vs}$ for the InAs channel, and a hard induced superconducting gap. Josephson junctions exhibited a high interface transmission, $mathcal{T} approx 0.75 $, gate voltage tunable switching current with a product of critical current and normal state resistance, $I_{mathrm{C}}R_{mathrm{N}} approx 83,mathrm{mu V}$, and signatures of multiple Andreev reflections. These results pave the way for scalable and high coherent gate voltage tunable transmon devices and other superconductor-semiconductor hybrids fabricated directly on silicon.
Motivated by a recent experimental report[1] claiming the likely observation of the Majorana mode in a semiconductor-superconductor hybrid structure[2,3,4,5], we study theoretically the dependence of the zero bias conductance peak associated with the zero-energy Majorana mode in the topological superconducting phase as a function of temperature, tunnel barrier potential, and a magnetic field tilted from the direction of the wire for realistic wires of finite lengths. We find that higher temperatures and tunnel barriers as well as a large magnetic field in the direction transverse to the wire length could very strongly suppress the zero-bias conductance peak as observed in Ref.[1]. We also show that a strong magnetic field along the wire could eventually lead to the splitting of the zero bias peak into a doublet with the doublet energy splitting oscillating as a function of increasing magnetic field. Our results based on the standard theory of topological superconductivity in a semiconductor hybrid structure in the presence of proximity-induced superconductivity, spin-orbit coupling, and Zeeman splitting show that the recently reported experimental data are generally consistent with the existing theory that led to the predictions for the existence of the Majorana modes in the semiconductor hybrid structures in spite of some apparent anomalies in the experimental observations at first sight. We also make several concrete new predictions for future observations regarding Majorana splitting in finite wires used in the experiments.
Nonlocal quasiparticle transport in normal-superconductor-normal (NSN) hybrid structures probes sub-gap states in the proximity region and is especially attractive in the context of Majorana research. Conductance measurement provides only partial information about nonlocal response composed from both electron-like and hole-like quasiparticle excitations. In this work, we show how a nonlocal shot noise measurement delivers a missing puzzle piece in NSN InAs nanowire-based devices. We demonstrate that in a trivial superconducting phase quasiparticle response is practically charge-neutral, dominated by the heat transport component with a thermal conductance being on the order of conductance quantum. This is qualitatively explained by numerous Andreev reflections of a diffusing quasiparticle, that makes its charge completely uncertain. Consistently, strong fluctuations and sign reversal are observed in the sub-gap nonlocal conductance, including occasional Andreev rectification signals. Our results prove conductance and noise as complementary measurements to characterize quasiparticle transport in superconducting proximity devices.
Using Bogoliubov-de Gennes (BdG) equations we numerically calculate the disorder averaged density of states of disordered semiconductor nanowires driven into a putative topological p-wave superconducting phase by spin-orbit coupling, Zeeman spin splitting and s-wave superconducting proximity effect induced by a nearby superconductor. Comparing with the corresponding theoretical self-consistent Born approximation (SCBA) results treating disorder effects, we comment on the topological phase diagram of the system in the presence of increasing disorder. Although disorder strongly suppresses the zero-bias peak (ZBP) associated with the Majorana zero mode, we find some clear remnant of a ZBP even when the topological gap has essentially vanished in the SCBA theory because of disorder. We explicitly compare effects of disorder on the numerical density of states in the topological and trivial phases.
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