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Register a new userTransmission and diffraction properties of a narrow slit in ideal metal
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By solving Maxwell equations with the ideal-metal boundary conditions in the TM case, we have fully described the transmission and diffraction properties of a single slit regardless of its width. Efficiencies of the main transformation processes -- transmission, diffraction, and reflection -- are analyzed in the sub-to-few-wavelength range showing a number of sharp fundamental features. Close links with the case of real metal are considered.
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Neutron diffraction has been used to investigate antiferromagnetism since 1949. Here we show that antiferromagnetic reflections can also be seen in transmission electron diffraction patterns from NiO. The diffraction patterns taken here came from regions as small as 10.5 nm and such patterns could be used to form an image of the antiferromagnetic structure with a nanometre resolution.
In this paper we show how transmission metallic gratings with very narrow and deep enough slits can exhibit transmission resonances for wavelengths larger than the period of the grating. By using a transfer matrix formalism and a quasi-analytical model based on a modal expansion, we show that there are two possible ways of transferring light from the upper surface to the lower one: by the excitation of coupled surface plasmon polaritons on both surfaces of the metallic grating or by the coupling of incident plane waves with waveguide resonances located in the slits. Both mechanisms can lead to almost perfect transmittance for those particular resonances.
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The ideal diode is a theoretical concept that completely conducts the electric current under forward bias without any loss and that behaves like a perfect insulator under reverse bias. However, real diodes have a junction barrier that electrons have to overcome and thus they have a threshold voltage $V_T$, which must be supplied to the diode to turn it on. This threshold voltage gives rise to power dissipation in the form of heat and hence is an undesirable feature. In this work, based on half-metallic magnets and spin-gapless semiconductors we propose a diode concept that does not have a junction barrier and the operation principle of which relies on the spin-dependent transport properties of the HMM and SGS materials. We show that the HMM and SGS materials form an Ohmic contact under any finite forward bias, while for a reverse bias the current is blocked due to spin-dependent filtering of the electrons. Thus, the HMM-SGS junctions act as a diode with zero threshold voltage $V_T$, and linear $I-V$ characteristics as well as an infinite on:off ratio at zero temperature. However, at finite temperatures, non-spin-flip thermally excited high-energy electrons as well as low-energy spin-flip excitations can give rise to a leakage current and thus reduce the on:off ratio under a reverse bias. Furthermore, a zero threshold voltage allows one to detect extremely weak signals and due to the Ohmic HMM-SGS contact, the proposed diode has a much higher current drive capability and low resistance, which is advantageous compared to conventional semiconductor diodes. We employ the NEGF method combined with DFT to demonstrate the linear $I-V$ characteristics of the proposed diode based on two-dimensional half-metallic Fe/MoS$_2$ and spin-gapless semiconducting VS$_2$ planar heterojunctions.
VO2 is a much-discussed material for oxide electronics and neuromorphic computing applications. Here, heteroepitaxy of vanadium dioxide (VO2) was realized on top of oxide nanosheets that cover either the amorphous silicon dioxide surfaces of Si substrates or X-ray transparent silicon nitride membranes. The out-of-plane orientation of the VO2 thin films was controlled at will between (011)M1/(110)R and (-402)M1/(002)R by coating the bulk substrates with Ti0.87O2 and NbWO6 nanosheets, respectively, prior to VO2 growth. Temperature dependent X-ray diffraction and automated crystal orientation mapping in microprobe TEM mode (ACOM-TEM) characterized the high phase purity, the crystallographic and orientational properties of the VO2 films. Transport measurements and soft X-ray absorption in transmission are used to probe the VO2 metal-insulator transition, showing results of a quality equal to those from epitaxial films on bulk single-crystal substrates. Successful local manipulation of two different VO2 orientations on a single substrate is demonstrated using VO2 grown on lithographically-patterned lines of Ti0.87O2 and NbWO6 nanosheets investigated by electron backscatter diffraction. Finally, the excellent suitability of these nanosheet-templated VO2 films for advanced lensless imaging of the metal-insulator transition using coherent soft X-rays is discussed.
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