No Arabic abstract
We investigate the electron transport through a graphene p-n junction under a perpendicular magnetic field. By using Landauar-Buttiker formalism combining with the non-equilibrium Green function method, the conductance is studied for the clean and disordered samples. For the clean p-n junction, the conductance is quite small. In the presence of disorders, it is strongly enhanced and exhibits plateau structure at suitable range of disorders. Our numerical results show that the lowest plateau can survive for a very broad range of disorder strength, but the existence of high plateaus depends on system parameters and sometimes can not be formed at all. When the disorder is slightly outside of this disorder range, some conductance plateaus can still emerge with its value lower than the ideal value. These results are in excellent agreement with the recent experiment.
Spatial separation of electrons and holes in graphene gives rise to existence of plasmon waves confined to the boundary region. Theory of such guided plasmon modes within hydrodynamics of electron-hole liquid is developed. For plasmon wavelengths smaller than the size of charged domains plasmon dispersion is found to be omega ~ q^(1/4). Frequency, velocity and direction of propagation of guided plasmon modes can be easily controlled by external electric field. In the presence of magnetic field spectrum of additional gapless magnetoplasmon excitations is obtained. Our findings indicate that graphene is a promising material for nanoplasmonics.
Electrical transport in three dimensional topological insulators(TIs) occurs through spin-momentum locked topological surface states that enclose an insulating bulk. In the presence of a magnetic field, surface states get quantized into Landau levels giving rise to chiral edge states that are naturally spin-polarized due to spin momentum locking. It has been proposed that p-n junctions of TIs in the quantum Hall regime can manifest unique spin dependent effects, apart from forming basic building blocks for highly functional spintronic devices. Here, for the first time we study electrostatically defined n-p-n junctions of bulk insulating topological insulator BiSbTe$_{1.25}$Se$_{1.75}$ in the quantum Hall regime. We reveal the remarkable quantization of longitudinal resistance into plateaus at 3/2 and 2/3 h/e$^2$, apart from several partially developed fractional plateaus. Theoretical modeling combining the electrostatics of the dual gated TI n-p-n junction with Landauer Buttiker formalism for transport through a network of chiral edge states explains our experimental data, while revealing remarkable differences from p-n junctions of graphene and two-dimensional electron gas systems. Our work not only opens up a route towards exotic spintronic devices but also provides a test bed for investigating the unique signatures of quantum Hall effects in topological insulators.
We developed a multi-level lithography process to fabricate graphene p-n-p junctions with the novel geometry of contactless, suspended top gates. This fabrication procedure minimizes damage or doping to the single atomic layer, which is only exposed to conventional resists and developers. The process does not require special equipment for depositing gate dielectrics or releasing sacrificial layers, and is compatible with annealing procedures that improve device mobility. Using this technique, we fabricate graphene devices with suspended local top gates, where the creation of high quality graphene p-n-p junctions is confirmed by transport data at zero and high magnetic fields.
Accessing intrinsic properties of a graphene device can be hindered by the influence of contact electrodes. Here, we capacitively couple graphene devices to superconducting resonant circuits and observe clear changes in the resonance- frequency and -widths originating from the internal charge dynamics of graphene. This allows us to extract the density of states and charge relaxation resistance in graphene p-n junctions without the need of electrical contacts. The presented characterizations pave a fast, sensitive and non-invasive measurement of graphene nanocircuits.
The electronic states of an electrostatically confined cylindrical graphene quantum dot and the electric transport through this device are studied theoretically within the continuum Dirac-equation approximation and compared with numerical results obtained from a tight-binding lattice description. A spectral gap, which may originate from strain effects, additional adsorbed atoms or substrate-induced sublattice-symmetry breaking, allows for bound and scattering states. As long as the diameter of the dot is much larger than the lattice constant, the results of the continuum and the lattice model are in very good agreement. We also investigate the influence of a sloping dot-potential step, of on-site disorder along the sample edges, of uncorrelated short-range disorder potentials in the bulk, and of random magnetic-fluxes that mimic ripple-disorder. The quantum dots spectral and transport properties depend crucially on the specific type of disorder. In general, the peaks in the density of bound states are broadened but remain sharp only in the case of edge disorder.