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Register a new userLow magnetic field anomaly of the Hall effect in disordered 2D systems: Interplay between weak localization and electron-electron interaction
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Alexander Germanenko
Publication date
2010
fields
Physics
and research's language is
English
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The nonlinear behavior of the Hall resistivity at low magnetic fields in single quantum well GaAs/In$_x$Ga$_{1-x}$As/GaAs heterostructures with degenerated electron gas is studied. It has been found that this anomaly is accompanied by the weaker temperature dependence of the conductivity as compared with that predicted by the first-order theory of the quantum corrections to the conductivity. We show that both effects in strongly disordered systems stem from the second order quantum correction caused by the effect of weak localization on the interaction correction and vice versa. This correction contributes mainly to the diagonal component of the conductivity tensor, it depends on the magnetic field like the weak localization correction and on the temperature like the interaction contribution.
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We calculate the spin-Hall conductivity for a two-dimensional electron gas within the self-consistent Born approximation, varying the strength and type of disorder. In the weak disorder limit we find both analytically and numerically a vanishing spin-Hall conductivity even when we allow a momentum dependent scattering. Separating the reactive from the disspative current response, we find the universal value $sigma^R_{sH} = e/8 pi$ for the reactive response, which cancels however with the dissipative part $sigma^D_{sH} = -e/8 pi$.
We report electron transport studies in an encapsulated few-layer WTe$_2$ at low temperatures and high magnetic fields. The magnetoconductance reveals a temperature-induced crossover between weak antilocalization (WAL) and weak localization (WL) in quantum diffusive regime. We show that the crossover clearly manifests coexistence and competition among several characteristic lengths, including the dephasing length, the spin-flip length, and the mean free path. In addition, low temperature conductance increases logarithmically with the increase of temperature indicating an interplay of electron-electron interaction (EEI) and spin-orbit coupling (SOC). We demonstrate the existences and quantify the strengths of EEI and SOC which are considered to be responsible for gap opening in the quantum spin hall state in WTe2 at the monolayer limit.
Mean-field theory of non-interacting disordered electron systems is widely and successfully used to describe equilibrium properties of alloys in the whole range of disorder strengths. It, however, fails to take into account effects of quantum coherence and localizing back-scattering effects when applied to transport phenomena. We present an approximate scheme extending the mean-field theory for one-electron properties in that it offers a formula for the two-particle vertex and the electrical conductivity non-perturbatively including the leading-order vertex corrections in a way that the approximation remains consistent and the conductivity non-negative in all disorder regimes.
A two-band model of a disordered semiconductor is used to analyze dynamical interaction induced weakening of localization in a system that is accessible to experimental verification. The results show a dependence on the sign of the two-particle interaction and on the optical excitation energy of the Coulomb-correlated electron-hole pair.
The Anderson delocalization-localization transition is studied in multilayered systems with randomly placed interlayer bonds of density $p$ and strength $t$. In the absence of diagonal disorder (W=0), following an appropriate perturbation expansion, we estimate the mean free paths in the main directions and verify by scaling of the conductance that the states remain extended for any finite $p$, despite the interlayer disorder. In the presence of additional diagonal disorder ($W > 0$) we obtain an Anderson transition with critical disorder $W_c$ and localization length exponent $ u$ independently of the direction. The critical conductance distribution $P_{c}(g)$ varies, however, for the parallel and the perpendicular directions. The results are discussed in connection to disordered anisotropic materials.
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