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Register a new userThermal infrared emission reveals the Dirac point movement in biased graphene
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Graphene is a 2-dimensional material with high carrier mobility and thermal conductivity, suitable for high-speed electronics. Conduction and valence bands touch at the Dirac point. The absorptivity of single-layer graphene is 2.3%, nearly independent of wavelength. Here we investigate the thermal radiation from biased graphene transistors. We find that the emission spectrum of single-layer graphene follows that of a grey body with constant emissivity (1.6 pm 0.8)%. Most importantly, we can extract the temperature distribution in the ambipolar graphene channel, as confirmed by Stokes/anti-Stokes measurements. The biased graphene exhibits a temperature maximum whose location can be controlled by the gate voltage. We show that this peak in temperature reveals the spatial location of the minimum in carrier density, i.e. the Dirac point.
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Graphene is a promising candidate for optoelectronic applications such as photodetectors, terahertz imagers, and plasmonic devices. The origin of photoresponse in graphene junctions has been studied extensively and is attributed to either thermoelectric or photovoltaic effects. In addition, hot carrier transport and carrier multiplication are thought to play an important role. Here we report the intrinsic photoresponse in biased but otherwise homogeneous graphene. In this classic photoconductivity experiment, the thermoelectric effects are insignificant. Instead, the photovoltaic and a photo-induced bolometric effect dominate the photoresponse due to hot photocarrier generation and subsequent lattice heating through electron-phonon cooling channels respectively. The measured photocurrent displays polarity reversal as it alternates between these two mechanisms in a backgate voltage sweep. Our analysis yields elevated electron and phonon temperatures, with the former an order higher than the latter, confirming that hot electrons drive the photovoltaic response of homogeneous graphene near the Dirac point.
The decay dynamics of excited carriers in graphene have attracted wide scientific attention, as the gapless Dirac electronic band structure opens up relaxation channels that are not allowed in conventional materials. We report Fermi-level-dependent mid-infrared emission in graphene originating from a previously unobserved decay channel: hot plasmons generated from optically excited carriers. The observed Fermi-level dependence rules out Planckian light emission mechanisms and is consistent with the calculated plasmon emission spectra in photoinverted graphene. Evidence for bright hot plasmon emission is further supported by Fermi-level-dependent and polarization-dependent resonant emission from graphene plasmonic nanoribbon arrays under pulsed laser excitation. Spontaneous plasmon emission is a bright emission process as our calculations for our experimental conditions indicate that the spectral flux of spontaneously generated plasmons is several orders of magnitude higher than blackbody emission at a temperature of several thousand Kelvin. In this work, it is shown that a large enhancement in radiation efficiency of graphene plasmons can be achieved by decorating graphene surface with gold nanodisks, which serve as out-coupling scatterers and promote localized plasmon excitation when they are resonant with the incoming excitation light. These observations set a framework for exploration of ultrafast and ultrabright mid-infrared emission processes and light sources.
Graphene with honeycomb structure, being critically important in understanding physics of matter, exhibits exceptionally unusual half-integer quantum Hall effect and unconventional electronic spectrum with quantum relativistic phenomena. Particularly, graphene-like structure can be used for realizing topological insulator which inspires an intrinsic topological protection mechanism with strong immunity for maintaining coherence of quantum information. These various peculiar physics arise from the unique properties of Dirac cones which show high hole degeneracy, massless charge carriers and linear intersection of bands. Experimental observation of Dirac cones conventionally focuses on the energy-momentum space with bulk measurement. Recently, the wave function and band structure have been mapped into the real-space in photonic system, and made flexible control possible. Here, we demonstrate a direct observation of the movement of Dirac cones from single-photon dynamics in photonic graphene under different biaxial strains. Sharing the same spirit of wave-particle nature in quantum mechanics, we identify the movement of Dirac cones by dynamically detecting the edge modes and extracting the diffusing distance of the packets with accumulation and statistics on individual single-particle registrations. Our results of observing movement of Dirac cones from single-photon dynamics, together with the method of direct observation in real space by mapping the band structure defined in momentum space, pave the way to understand a variety of artificial structures in quantum regime.
We study, within the tight-binding approximation, the electronic properties of a graphene bilayer in the presence of an external electric field applied perpendicular to the system -- emph{biased bilayer}. The effect of the perpendicular electric field is included through a parallel plate capacitor model, with screening correction at the Hartree level. The full tight-binding description is compared with its 4-band and 2-band continuum approximations, and the 4-band model is shown to be always a suitable approximation for the conditions realized in experiments. The model is applied to real biased bilayer devices, either made out of SiC or exfoliated graphene, and good agreement with experimental results is found, indicating that the model is capturing the key ingredients, and that a finite gap is effectively being controlled externally. Analysis of experimental results regarding the electrical noise and cyclotron resonance further suggests that the model can be seen as a good starting point to understand the electronic properties of graphene bilayer. Also, we study the effect of electron-hole asymmetry terms, as the second-nearest-neighbor hopping energies $t$ (in-plane) and $gamma_{4}$ (inter-layer), and the on-site energy $Delta$.
Dirac electrons in graphene are to lowest order spin 1/2 particles, owing to the orbital symmetries at the Fermi level. However, anisotropic corrections in the $g$-factor appear due to the intricate spin-valley-orbit coupling of chiral electrons. We resolve experimentally the $g$-factor along the three orthogonal directions in a large-scale graphene sample. We employ a Hall bar structure with an external magnetic field of arbitrary direction, and extract the effective $g$-tensor via resistively-detected electron spin resonance. We employ a theoretical perturbative approach to identify the intrinsic and extrinsic spin orbit coupling and obtain a fundamental parameter inherent to the atomic structure of $^{12}$C, commonly used in ab-initio models.
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