Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userElectron and optical phonon temperatures in electrically biased graphene
121
0
0.0
(
0
)
Ask ChatGPT about the research
No Arabic abstract
We examine the intrinsic energy dissipation steps in electrically biased graphene channels. By combining in-situ measurements of the spontaneous optical emission with a Raman spectroscopy study of the graphene sample under conditions of current flow, we obtain independent information on the energy distribution of the electrons and phonons. The electrons and holes contributing to light emission are found to obey a thermal distribution, with temperatures in excess of 1500 K in the regime of current saturation. The zone-center optical phonons are also highly excited and are found to be in equilibrium with the electrons. For a given optical phonon temperature, the anharmonic downshift of the Raman G-mode is smaller than expected under equilibrium conditions, suggesting that the electrons and high-energy optical phonons are not fully equilibrated with all of the phonon modes.
rate research
Read More
Using electrical transport experiments and shot noise thermometry, we investigate electron-phonon heat transfer rate in a suspended bilayer graphene. Contrary to monolayer graphene with heat flow via three-body supercollision scattering, we find that regular electron - optical phonon scattering in bilayer graphene provides the dominant scattering process at electron energies $ gtrsim 0.15$ eV. We determine the strength of these intrinsic heat flow processes of bilayer graphene and find good agreement with theoretical estimates when both zone edge and zone center optical phonons are taken into account.
The possibility of superconducting pairing of electrons in doped graphene due to in-plane and out-of-plane phonons is studied. Quadratic coupling of electrons with out-of-plane phonons is considered in details, taking into account both deformation potential and bond-stretch contributions. The order parameter of electron-electron pairing can have different structures due to four-component spinor character of electrons wave function. We consider s-wave pairing, diagonal on conduction and valence bands, but having arbitrary structure with respect to valley degree of freedom. The sign and magnitude of contribution of each phonon mode to effective electron-electron interaction turns out to depend on both the symmetry of phonon mode and the structure of the order parameter. Unconventional orbital-spin symmetry of the order parameter is found.
We examine the nature of the transitions between the normal and the superconducting branches of superconductor-graphene-superconductor Josephson junctions. We attribute the hysteresis between the switching (superconducting to normal) and retrapping (normal to superconducting) transitions to electron overheating. In particular, we demonstrate that the retrapping current corresponds to the critical current at an elevated temperature, where the heating is caused by the retrapping current itself. The superconducting gap in the leads suppresses the hot electron outflow, allowing us to further study electron thermalization by phonons at low temperatures ($T lesssim 1$K). The relationship between the applied power and the electron temperature was found to be $Ppropto T^3$, which we argue is consistent with cooling due to electron-phonon interactions.
We investigate the basic charge and heat transport properties of charge neutral epigraphene at sub-kelvin temperatures, demonstrating nearly logarithmic dependence of electrical conductivity over more than two decades in temperature. Using graphenes sheet conductance as in-situ thermometer, we present a measurement of electron-phonon heat transport at mK temperatures and show that it obeys the $T^4$ dependence characteristic for clean two-dimensional conductor. Based on our measurement we predict the noise-equivalent power of $sim 10^{-22}~{rm W}/sqrt{{rm Hz}}$ of epigraphene bolometer at the low end of achievable temperatures.
Bilayers of graphitic materials have potential applications in field effect transistors (FETs). A potential difference applied between certain ionic bilayers made from insulating graphitic materials such as BN, ZnO and AlN could reduce gap sizes, turning them into useful semiconductors. On the other hand, opening of a small semiconducting gap occurs in graphene bilayers under applied field. The aim here is to investigate to what extent substrate induced electron-phonon interactions (EPIs) modify this gap change. We examine EPIs in several lattice configurations, using a perturbative approach. The typical effect of EPIs on the ionic bilayers is an undesirable gap widening. The size of this gap change varies considerably with lattice structure and the magnitude of the bias. When bias is larger than the non-interacting gap size, EPIs have the smallest effect on the bandgap, especially in configurations with $AA^{prime}$ and $AB$ structures. Thus careful selection of substrate, lattice configuration and bias strength to minimise the effects of EPIs could be important for optimising the properties of electronic devices. We use parameters related to BN in this article. In practice, the results presented here are broadly applicable to other graphitic bilayers, and are likely to be qualitatively similar in metal dichalcogenide bilayers such as MoS$_2$, which are already of high interest for their use in FETs.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
