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Register a new userMeasurement back-action on adiabatic coherent electron transport
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Authors
Jer^ome Rech
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We study the back-action of a nearby measurement device on electrons undergoing coherent transfer via adiabatic passage (CTAP) in a triple-well system. The measurement is provided by a quantum point contact capacitively coupled to the middle well, thus acting as a detector sensitive to the charge configuration of the triple-well system. We account for this continuous measurement by treating the whole {triple-well + detector} as a closed quantum system. This leads to a set of coupled differential equations for the density matrix of the enlarged system which we solve numerically. This approach allows to study a single realization of the measurement process while keeping track of the detector output, which is especially relevant for experiments. In particular, we find the emergence of a new peak in the distribution of electrons that passed through the point contact. As one increases the coupling between the middle potential well and the detector, this feature becomes more prominent and is accompanied by a substantial drop in the fidelity of the CTAP scheme.
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Coherent Tunneling Adiabatic Passage (CTAP) has been proposed as a long-range physical qubit transport mechanism in solid-state quantum computing architectures. Although the mechanism can be implemented in either a chain of quantum dots or donors, a 1D chain of donors in Si is of particular interest due to the natural confining potential of donors that can in principle help reduce the gate densities in solid-state quantum computing architectures. Using detailed atomistic modeling, we investigate CTAP in a more realistic triple donor system in the presence of inevitable fabrication imperfections. In particular, we investigate how an adiabatic pathway for CTAP is affected by donor misplacements, and propose schemes to correct for such errors. We also investigate the sensitivity of the adiabatic path to gate voltage fluctuations. The tight-binding based atomistic treatment of straggle used here may benefit understanding of other donor nanostructures, such as donor-based charge and spin qubits. Finally, we derive an effective 3 times 3 model of CTAP that accurately resembles the voltage tuned lowest energy states of the multi-million atom tight-binding simulations, and provides a translation between intensive atomistic Hamiltonians and simplified effective Hamiltonians while retaining the relevant atomic-scale information. This method can help characterize multi-donor experimental structures quickly and accurately even in the presence of imperfections, overcoming some of the numeric intractabilities of finding optimal eigenstates for non-ideal donor placements.
The standard quantum limit constrains the precision of an oscillator position measurement. It arises from a balance between the imprecision and the quantum back-action of the measurement. However, a measurement of only a single quadrature of the oscillator can evade the back-action and be made with arbitrary precision. Here we demonstrate quantum back-action evading measurements of a collective quadrature of two mechanical oscillators, both coupled to a common microwave cavity. The work allows for quantum state tomography of two mechanical oscillators, and provides a foundation for macroscopic mechanical entanglement and force sensing beyond conventional quantum limits.
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We realize indirect partial measurement of a transmon qubit in circuit quantum electrodynamics by interaction with an ancilla qubit and projective ancilla measurement with a dedicated readout resonator. Accurate control of the interaction and ancilla measurement basis allows tailoring the measurement strength and operator. The tradeoff between measurement strength and qubit back-action is characterized through the distortion of a qubit Rabi oscillation imposed by ancilla measurement in different bases. Combining partial and projective qubit measurements, we provide the solid-state demonstration of the correspondence between a non-classical weak value and the violation of a Leggett-Garg inequality.
A solid-state analogue of Stimulated Raman Adiabatic Passage can be implemented in a triple well solid-state system to coherently transport an electron across the wells with exponentially suppressed occupation in the central well at any point of time. Termed coherent tunneling adiabatic passage (CTAP), this method provides a robust way to transfer quantum information encoded in the electronic spin across a chain of quantum dots or donors. Using large scale atomistic tight-binding simulations involving over 3.5 million atoms, we verify the existence of a CTAP pathway in a realistic solid-state system: gated triple donors in silicon. Realistic gate profiles from commercial tools were combined with tight-binding methods to simulate gate control of the donor to donor tunnel barriers in the presence of cross-talk. As CTAP is an adiabatic protocol, it can be analyzed by solving the time independent problem at various stages of the pulse - justifying the use of time-independent tight-binding methods to this problem. Our results show that a three donor CTAP transfer, with inter-donor spacing of 15 nm can occur on timescales greater than 23 ps, well within experimentally accessible regimes. The method not only provides a tool to guide future CTAP experiments, but also illuminates the possibility of system engineering to enhance control and transfer times.
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