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Register a new userCoherent transport of spin by adiabatic passage in quantum dot arrays
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We introduce an adiabatic transfer protocol for spin states in large quantum dot arrays that is based on time-dependent modulation of the Heisenberg exchange interaction in the presence of a magnetic field gradient. We refer to this protocol as spin-CTAP (coherent transport by adiabatic passage) in analogy to a related protocol developed for charge state transfer in quantum dot arrays. The insensitivity of this adiabatic protocol to pulse imperfections has potential advantages for reading out extended spin qubit arrays. When the static exchange interaction varies across the array, a quantum-controlled version of spin-CTAP is possible, where the transfer process is conditional on the spin states in the middle of the array. This conditional operation can be used to generate N-qubit entangled GHZ states. Using a realistic noise model, we analyze the robustness of the spin-CTAP operations and find that high-fidelity (>95%) spin eigenstate transfer and GHZ state preparation is feasible in current devices.
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Long-distance transfer of quantum states is an indispensable part of large-scale quantum information processing. We propose a novel scheme for the transfer of two-electron entangled states, from one edge of a quantum dot array to the other by coherent adiabatic passage. This protocol is mediated by pulsed tunneling barriers. In a second step, we seek for a speed up by shortcut to adiabaticity techniques. This significantly reduces the operation time and, thus, minimizes the impact of decoherence. For typical parameters of state-of-the-art solid state devices, the accelerated protocol has an operation time in the nanosecond range and terminates before a major coherence loss sets in. The scheme represents a promising candidate for entanglement transfer in solid state quantum information processing.
Coherent Tunneling Adiabatic Passage (CTAP) has been proposed as a long-range physical qubit transport mechanism in solid-state quantum computing architectures. Although the mechanism can be implemented in either a chain of quantum dots or donors, a 1D chain of donors in Si is of particular interest due to the natural confining potential of donors that can in principle help reduce the gate densities in solid-state quantum computing architectures. Using detailed atomistic modeling, we investigate CTAP in a more realistic triple donor system in the presence of inevitable fabrication imperfections. In particular, we investigate how an adiabatic pathway for CTAP is affected by donor misplacements, and propose schemes to correct for such errors. We also investigate the sensitivity of the adiabatic path to gate voltage fluctuations. The tight-binding based atomistic treatment of straggle used here may benefit understanding of other donor nanostructures, such as donor-based charge and spin qubits. Finally, we derive an effective 3 times 3 model of CTAP that accurately resembles the voltage tuned lowest energy states of the multi-million atom tight-binding simulations, and provides a translation between intensive atomistic Hamiltonians and simplified effective Hamiltonians while retaining the relevant atomic-scale information. This method can help characterize multi-donor experimental structures quickly and accurately even in the presence of imperfections, overcoming some of the numeric intractabilities of finding optimal eigenstates for non-ideal donor placements.
Adiabatic passage of two correlated electrons in three coupled quantum dots is shown to provide a robust and controlled way of distilling, transporting and detecting spin entanglement, as well as of measuring the rate of spin disentanglement. Employing tunable interdot coupling the scheme creates, from an unentangled two-electron state, a superposition of spatially separated singlet and triplet states. A single measurement of a dot population (charge) collapses the wave function to either of these states, realizing entanglement to charge conversion. The scheme is robust, with the efficiency close to 100%, for a large range of realistic spectral parameters.
Preparation of a specific quantum state is a required step for a variety of proposed practical uses of quantum dynamics. We report an experimental demonstration of optical quantum state preparation in a semiconductor quantum dot with electrical readout, which contrasts with earlier work based on Rabi flopping in that the method is robust with respect to variation in the optical coupling. We use adiabatic rapid passage, which is capable of inverting single dots to a specified upper level. We demonstrate that when the pulse power exceeds a threshold for inversion, the final state is independent of power. This provides a new tool for preparing quantum states in semiconductor dots and has a wide range of potential uses.
The energy states in semiconductor quantum dots are discrete as in atoms, and quantum states can be coherently controlled with resonant laser pulses. Long coherence times allow the observation of Rabi-flopping of a single dipole transition in a solid state device, for which occupancy of the upper state depends sensitively on the dipole moment and the excitation laser power. We report on the robust preparation of a quantum state using an optical technique that exploits rapid adiabatic passage from the ground to an excited state through excitation with laser pulses whose frequency is swept through the resonance. This observation in photoluminescence experiments is made possible by introducing a novel optical detection scheme for the resonant electron hole pair (exciton) generation.
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