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Register a new userSpectral gap induced by structural corrugation in armchair graphene nanoribbons
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Added by
Sebasti\\'an Costamagna
Publication date
2010
fields
Physics
and research's language is
English
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We study the effects of the structural corrugation or rippling on the electronic properties of undoped armchair graphene nanoribbons (AGNR). First, reanalyzing the single corrugated graphene layer we find that the two inequivalent Dirac points (DP), move away one from the other. Otherwise, the Fermi velocity decrease by increasing rippling. Regarding the AGNRs, whose metallic behavior depends on their width, we analyze in particular the case of the zero gap band-structure AGNRs. By solving the Dirac equation with the adequate boundary condition we show that due to the shifting of the DP a gap opens in the spectra. This gap scale with the square of the rate between the high and the wavelength of the deformation. We confirm this prediction by exact numerical solution of the finite width rippled AGNR. Moreover, we find that the quantum conductance, calculated by the non equilibrium Greens function technique vanish when the gap open. The main conclusion of our results is that a conductance gap should appear for all undoped corrugated AGNR independent of their width.
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Strain fold-like deformations on armchair graphene nanoribbons (AGNRs) can be properly engineered in experimental setups, and could lead to a new controlling tool for gaps and transport properties. Here, we analyze the electronic properties of folded AGNRs relating the electronic responses and the mechanical deformation. An important and universal parameter for the gap engineering is the ribbon percent width variation, i.e., the difference between the deformed and undeformed ribbon widths. AGNRs bandgap can be tuned mechanically in a well defined bounded range of energy values, eventually leading to a metallic system. This characteristic provides a new controllable degree of freedom that allows manipulation of electronic currents. We show that the numerical results are analytically predicted by solving the Dirac equation for the strained system.
Electronic states at the ends of a narrow armchair nanoribbon give rise to a pair of non-locally entangled spins. We propose two experiments to probe these magnetic states, based on magnetometry and tunneling spectroscopy, in which correlation effects lead to a striking, nonlinear response to external magnetic fields. On the basis of low-energy theories that we derive here, it is remarkably simple to assess these nonlinear signatures for magnetic edge states. The effective theories are especially suitable in parameter regimes where other methods such as quantum Monte-Carlo simulations are exceedingly difficult due to exponentially small energy scales. The armchair ribbon setup discussed here provides a promisingly well-controlled (both experimentally and theoretically) environment for studying the principles behind edge magnetism in graphene-based nano-structures.
By analytically constructing the matrix elements of an electron-phonon interaction for the $D$ band in the Raman spectra of armchair graphene nanoribbons, we show that pseudospin and momentum conservation result in (i) a $D$ band consisting of two components, (ii) a $D$ band Raman intensity that is enhanced only when the polarizations of the incident and scattered light are parallel to the armchair edge, and (iii) the $D$ band softening/hardening behavior caused by the Kohn anomaly effect is correlated with that of the $G$ band. Several experiments are mentioned that are relevant to these results. It is also suggested that pseudospin is independent of the boundary condition for the phonon mode, while momentum conservation depends on it.
In graphene nanoribbons (GNRs), the lateral confinement of charge carriers opens a band gap, the key feature to enable novel graphene-based electronics. Successful synthesis of GNRs has triggered efforts to realize field-effect transistors (FETs) based on single ribbons. Despite great progress, reliable and reproducible fabrication of single-ribbon FETs is still a challenge that impedes applications and the understanding of the charge transport. Here, we present reproducible fabrication of armchair GNR-FETs based on a network of nanoribbons and analyze the charge transport mechanism using nine-atom wide and, in particular, five-atom-wide GNRs with unprecedented conductivity. We show formation of reliable Ohmic contacts and a yield of functional FETs close to unity by lamination of GNRs on the electrodes. Modeling the charge carrier transport in the networks reveals that this process is governed by inter-ribbon hopping mediated by nuclear tunneling, with a hopping length comparable to the physical length of the GNRs. Furthermore, we demonstrate that nuclear tunneling is a general charge transport characteristic of the GNR networks by using two different GNRs. Overcoming the challenge of low-yield single-ribbon transistors by the networks and identifying the corresponding charge transport mechanism puts GNR-based electronics in a new perspective.
We study the effect of the edge disorder on the conductance of the graphene nanoribbons (GNRs). We find that only very modest edge disorder is sufficient to induce the conduction energy gap in the otherwise metallic GNRs and to lift any difference in the conductance between nanoribbons of different edge geometry. We relate the formation of the conduction gap to the pronounced edge disorder induced Anderson-type localization which leads to the strongly enhanced density of states at the edges, formation of surface-like states and to blocking of conductive paths through the ribbons.
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