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Register a new userProbing local electronic states in the quantum Hall regime with a side coupled quantum dot
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We demonstrate a new method for locally probing the edge states in the quantum Hall regime utilizing a side coupled quantum dot positioned at an edge of a Hall bar. By measuring the tunneling of electrons from the edge states into the dot, we acquire information on the local electrochemical potential and electron temperature of the edge states. Furthermore, this method allows us to observe the spatial modulation of the electrostatic potential at the edge state due to many-body screening effect.
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We report quantum Hall experiments on the plateau-insulator transition in a low mobility In_{.53} Ga_{.47} As/InP heterostructure. The data for the longitudinal resistance rho_{xx} follow an exponential law and we extract a critical exponent kappa= .55 pm .05 which is slightly different from the established value kappa = .42 pm .04 for the plateau transitions. Upon correction for inhomogeneity effects, which cause the critical conductance sigma_{xx}^* to depend marginally on temperature, our data indicate that the plateau-plateau and plateau- insulator transitions are in the same universality class.
We present a calculation for the second moment of the local density of states in a model of a two-dimensional quantum dot array near the quantum Hall transition. The quantum dot array model is a realistic adaptation of the lattice model for the quantum Hall transition in the two-dimensional electron gas in an external magnetic field proposed by Ludwig, Fisher, Shankar and Grinstein. We make use of a Dirac fermion representation for the Green functions in the presence of fluctuations for the quantum dot energy levels. A saddle-point approximation yields non-perturbative results for the first and second moments of the local density of states, showing interesting fluctuation behaviour near the quantum Hall transition. To our knowledge we discuss here one of the first analytic characterizations of chaotic behaviour for a two-dimensional mesoscopic structure. The connection with possible experimental investigations of the local density of states in the quantum dot array structures (by means of NMR Knight-shift or single-electron-tunneling techniques) and our work is also established.
Transport measurements are powerful tools to probe electronic properties of solid-state materials. To access properties of local electronic states in nanostructures, such as local density of states, electronic distribution and so on, micro-probes utilizing artificial nanostructures have been invented to perform measurements in addition to those with conventional macroscopic electronic reservoirs. Here we demonstrate a new kind of micro-probe: a fast single-lead quantum dot probe, which utilizes a quantum dot coupled only to the target structure through a tunneling barrier and fast charge readout by RF reflectometry. The probe can directly access the local electronic states with wide bandwidth. The probe can also access more electronic states, not just those around the Fermi level, and the operations are robust against bias voltages and temperatures.
We propose a current correlation spectrum approach to probe the quantum behaviors of a nanome-chanical resonator (NAMR). The NAMR is coupled to a double quantum dot (DQD), which acts as a quantum transducer and is further coupled to a quantum-point contact (QPC). By measuring the current correlation spectrum of the QPC, shifts in the DQD energy levels, which depend on the phonon occupation in the NAMR, are determined. Quantum behaviors of the NAMR could, thus, be observed. In particular, the cooling of the NAMR into the quantum regime could be examined. In addition, the effects of the coupling strength between the DQD and the NAMR on these energy shifts are studied. We also investigate the impacts on the current correlation spectrum of the QPC due to the backaction from the charge detector on the DQD.
We analyze the transport properties of a double quantum dot device in the side-coupled configuration. A small quantum dot (QD), having a single relevant electronic level, is coupled to source and drain electrodes. A larger QD, whose multilevel nature is considered, is tunnel-coupled to the small QD. A Fermi liquid analysis shows that the low temperature conductance of the device is determined by the total electronic occupation of the double QD. When the small dot is in the Kondo regime, an even number of electrons in the large dot leads to a conductance that reaches the unitary limit, while for an odd number of electrons a two stage Kondo effect is observed and the conductance is strongly suppressed. The Kondo temperature of the second stage Kondo effect is strongly affected by the multilevel structure of the large QD. For increasing level spacing, a crossover from a large Kondo temperature regime to a small Kondo temperature regime is obtained when the level spacing becomes of the order of the large Kondo temperature.
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