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Register a new userElectron-phonon coupling in semimetals in a high magnetic field
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We consider the effect of electron-phonon coupling in semimetals in high magnetic fields, with regard to elastic modes that can lead to a redistribution of carriers between pockets. We show that in a clean three dimensional system, at each Landau level crossing, this leads to a discontinuity in the magnetostriction, and a divergent contribution to the elastic modulus. We estimate the magnitude of this effect in the group V semimetal Bismuth.
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Electron-phonon coupling, being one of the most important parameters governing the material evolution after ultrafast energy deposition, yet remains the most unexplored one. In this work, we applied the dynamical coupling approach to calculate the nonadiabatic electron-ion energy exchange in nonequilibrium solids with the electronic temperature high above the atomic one. It was implemented into the tight-binding molecular dynamics code, and used to study electron-phonon coupling in various elemental metals. The developed approach is a universal scheme applicable to electronic temperatures up to a few electron-Volts, and to arbitrary atomic configuration and dynamics. We demonstrate that the calculated electron-ion (electron-phonon) coupling parameter agrees well with the available experimental data in high-electronic-temperature regime, validating the model. The following materials are studied here - fcc metals: Al, Ca, Ni, Cu, Sr, Y, Zr, Rh, Pd, Ag, Ir, Pt, Au, Pb; hcp metals: Mg, Sc, Ti, Co, Zn, Tc, Ru, Cd, Hf, Re, Os; bcc metals: V, Cr, Fe, Nb, Mo, Ba, Ta, W; diamond cubic lattice metals: Sn; specific cases of Ga, In, Mn, Te and Se; and additionally semimetal graphite and semiconductors Si and Ge. For many materials, we provide the first and so far the only estimation of the electron-phonon coupling at elevated electron temperatures, which can be used in various models simulating ultrafast energy deposition in matter. We also discuss the dependence of the coupling parameter on the atomic mass, temperature and density.
In the past decade, the advent of time-resolved spectroscopic tools has provided a new ground to explore fundamental interactions in solids and to disentangle degrees of freedom whose coupling leads to broad structures in the frequency domain. Time- and angle-resolved photoemission spectroscopy (tr-ARPES) has been utilized to directly study the relaxation dynamics of a metal in the presence of electron-phonon coupling. The effect of photo-excitations on the real and imaginary part of the self-energy as well as the time scale associated with different recombination processes are discussed. In contrast to a theoretical model, the phonon energy does not set a clear scale governing quasiparticle dynamics, which is also different from the results observed in a superconducting material. These results point to the need for a more complete theoretical framework to understand electron-phonon interaction in a photo-excited state.
The electron-phonon coupling strength in the spin-split valence band maximum of single-layer MoS$_2$ is studied using angle-resolved photoemission spectroscopy and density functional theory-based calculations. Values of the electron-phonon coupling parameter $lambda$ are obtained by measuring the linewidth of the spin-split bands as a function of temperature and fitting the data points using a Debye model. The experimental values of $lambda$ for the upper and lower spin-split bands at K are found to be 0.05 and 0.32, respectively, in excellent agreement with the calculated values for a free-standing single-layer MoS$_2$. The results are discussed in the context of spin and phase-space restricted scattering channels, as reported earlier for single-layer WS$_2$ on Au(111). The fact that the absolute valence band maximum in single-layer MoS$_2$ at K is almost degenerate with the local valence band maximum at $Gamma$ can potentially be used to tune the strength of the electron-phonon interaction in this material.
The role of reduced dimensionality and of the surface on electron-phonon (e-ph) coupling in silicon nanowires is determined from first principles. Surface termination and chemistry is found to have a relatively small influence, whereas reduced dimensionality fundamentally alters the behavior of deformation potentials. As a consequence, electron coupling to breathing modes emerges that cannot be described by conventional treatments of e-ph coupling. The consequences for physical properties such as scattering lengths and mobilities are significant: the mobilities for [110] grown wires are 6 times larger than those for [100] wires, an effect that cannot be predicted without the form we find for Si nanowire deformation potentials.
We investigate the ultrafast response of the bismuth (111) surface by means of time resolved photoemission spectroscopy. The direct visualization of the electronic structure allows us to gain insights on electron-electron and electron-phonon interaction. Concerning electron-electron interaction, it is found that electron thermalization is fluence dependent and can take as much as several hundreds of femtoseconds at low fluences. This behavior is in qualitative agreement with Landaus theory of Fermi liquids but the data show deviations from the behavior of a common 3D degenerate electron gas. Concerning electron-phonon interaction, our data allows us to directly observe the coupling of individual Bloch state to the coherent $A_{1g}$ mode. It is found that surface states are much less coupled to this mode when compared to bulk states. This is confirmed by textit{ab initio} calculations of surface and bulk bismuth.
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