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The distribution is calculated of the electron spin polarization under current-driven spin injection from a probe to a ferromagnetic film. It is shown that the main parameters determining difference of the spin polarization from the equilibrium value are the current density and the spin polarization of the probe material, while the relation between the probe diameter and the spin diffusion length influences the result very weakly, to a certain extent. A possibility is shown of reaching inverse population of the spin subbands at distances from the probe boundary comparable with the spin diffusion length.
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The rectifying effect of radio-frequency (RF) current is highly sensitive in terms of the spatial spin distribution and dynamics. It emerged that an additional spin wave mode was stimulated by the direct-current (DC) current and that this spin wave was detectable via rectification of the RF current. A phenomenological model to describe the time-dependent anisotropic magnetoresistance or time-dependent planer Hall effect is proposed and found to correlate well to the experimental results. The nonlinear spin dynamics accompanying additional spin waves are studied as functions of the RF and DC currents, the external magnetic field, and the applied field direction.
Spin-polarized electric current exerts torque on local magnetic spins, resulting in magnetic domain-wall (DW) motion in ferromagnetic nanowires. Such current-driven DW motion opens great opportunities toward next-generation magnetic devices controlled by current instead of magnetic field. However, the nature of the current-driven DW motion--considered qualitatively different from magnetic-field-driven DW motion--remains yet unclear mainly due to the painfully high operation current densities J_OP, which introduce uncontrollable experimental artefacts with serious Joule heating. It is also crucial to reduce J_OP for practical device operation. By use of metallic Pt/Co/Pt nanowires with perpendicular magnetic anisotropy, here we demonstrate DW motion at current densities down to the range of 10^9 A/m^2--two orders smaller than existing reports. Surprisingly the current-driven motion exhibits a scaling behaviour identical to the field-driven motion and thus, belongs to the same universality class despite their qualitative differences. Moreover all DW motions driven by either current or field (or by both) collapse onto a single curve, signalling the unification of the two driving mechanisms. The unified law manifests non-vanishing current efficiency at low current densities down to the practical level, applicable to emerging magnetic nanodevices.
Electrical spin injection into semiconductors paves the way for exploring new phenomena in the area of spin physics and new generations of spintronic devices. However the exact role of interface states in spin injection mechanism from a magnetic tunnel junction into a semiconductor is still under debate. In this letter, we demonstrate a clear transition from spin accumulation into interface states to spin injection in the conduction band of $n$-Ge. We observe spin signal amplification at low temperature due to spin accumulation into interface states followed by a clear transition towards spin injection in the conduction band from 200 K up to room temperature. In this regime, the spin signal is reduced down to a value compatible with spin diffusion model. More interestingly, we demonstrate in this regime a significant modulation of the spin signal by spin pumping generated by ferromagnetic resonance and also by applying a back-gate voltage which are clear manifestations of spin current and accumulation in the germanium conduction band.
We develop a method for universally resolving the important issue of separating spin pumping (SP) from spin rectification (SR) signals in bilayer spintronics devices. This method is based on the characteristic distinction of SP and SR, as revealed in their different angular and field symmetries. It applies generally for analyzing charge voltages in bilayers induced by the ferromagnetic resonance (FMR), independent of FMR line shape. Hence, it solves the outstanding problem that device specific microwave properties restrict the universal quantification of the spin Hall angle in bilayer devices via FMR experiments. Furthermore, it paves the way for directly measuring the nonlinear evolution of spin current generated by spin pumping. The spin Hall angle in a Py/Pt bilayer is thereby directly measured as 0.021$pm$0.015 up to a large precession cone angle of about 20$^{circ}$.
We demonstrate a current tunable Rashba spin orbit interaction in LaAlO3/SrTiO3 (LAO/STO) quasi two dimensional electron gas (2DEG) system. Anisotropic magnetoresistance (AMR) measurements are employed to detect and understand the current-induced Rashba field. The effective Rashba field scales with the current and a value of 2.35 T is observed for a dc-current of 200 uA. The results suggest that LAO/STO heterostructures can be considered for spin orbit torque based magnetization switching.
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