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Register a new userA Universal Method for Separating Spin Pumping from Spin Rectification Voltage of Ferromagnetic Resonance
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We develop a method for universally resolving the important issue of separating spin pumping (SP) from spin rectification (SR) signals in bilayer spintronics devices. This method is based on the characteristic distinction of SP and SR, as revealed in their different angular and field symmetries. It applies generally for analyzing charge voltages in bilayers induced by the ferromagnetic resonance (FMR), independent of FMR line shape. Hence, it solves the outstanding problem that device specific microwave properties restrict the universal quantification of the spin Hall angle in bilayer devices via FMR experiments. Furthermore, it paves the way for directly measuring the nonlinear evolution of spin current generated by spin pumping. The spin Hall angle in a Py/Pt bilayer is thereby directly measured as 0.021$pm$0.015 up to a large precession cone angle of about 20$^{circ}$.
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We develop a method for universally resolving the important issue of separating the inverse spin Hall effect (ISHE) from spin rectification effect (SRE) signal. This method is based on the consideration that the two effects depend on the spin injection direction: The ISHE is an odd function of the spin injection direction while the SRE is independent on it. Thus, inversion of the spin injection direction changes the ISHE voltage signal, while SRE voltage remains. It applies generally to analyzing the different voltage contributions without fitting them to special line shapes. This fast and simple method can be used in a wide frequency range, and has the flexibility of sample preparation.
We studied the response of a ferromagnet-insulator-normal metal tunnel structure under an external oscillating radio frequency (R.F.) magnetic field. The D. C. voltage across the junction is calculated and is found not to decrease despite the high resistance of the junction; instead, it is of the order of $mu V$ to $100mu V$, much larger than the experimentally observed value (100 nano-V) in the strong coupled ohmic ferromagnet-normal metal bilayers. This is consistent with recent experimental results in tunnel structures, where the voltage is larger than $mu V$s. The damping and loss of an external RF field in this structure is calculated.
Spin pumping by ferromagnetic resonance is one of the most common technique to determine spin hall angles, Edelstein lengths or spin diffusion lengths of a large variety of materials. In recent years, rising concerns have appeared regarding the interpretation of these experiments, underlining that the signal could arise purely from thermoelectric effects, rather than from coherent spin pumping. Here, we propose a method to evaluate the presence or absence of thermal effects in spin pumping signals, by combining bolometry and spin pumping by ferromagnetic resonance measurements, and comparing their timescale. Using a cavity to perform the experiments on PtPermalloy and La0.7Sr0.3MnO3Pt samples, we conclude on the absence of any measurable thermoelectric contribution such as the spin Seebeck and anomalous Nernst effects at resonance
We have measured the inverse spin Hall effect (ISHE) in textit{n}-Ge at room temperature. The spin current in germanium was generated by spin pumping from a CoFeB/MgO magnetic tunnel junction in order to prevent the impedance mismatch issue. A clear electromotive force was measured in Ge at the ferromagnetic resonance of CoFeB. The same study was then carried out on several test samples, in particular we have investigated the influence of the MgO tunnel barrier and sample annealing on the ISHE signal. First, the reference CoFeB/MgO bilayer grown on SiO$_{2}$ exhibits a clear electromotive force due to anisotropic magnetoresistance and anomalous Hall effect which is dominated by an asymmetric contribution with respect to the resonance field. We also found that the MgO tunnel barrier is essential to observe ISHE in Ge and that sample annealing systematically lead to an increase of the signal. We propose a theoretical model based on the presence of localized states at the interface between the MgO tunnel barrier and Ge to account for these observations. Finally, all of our results are fully consistent with the observation of ISHE in heavily doped $n$-Ge and we could estimate the spin Hall angle at room temperature to be $approx$0.001.
Topological spintronics aims to exploit the spin-momentum locking in the helical surface states of topological insulators for spin-orbit torque devices. We address a fundamental question that still remains unresolved in this context: does the topological surface state alone produce the largest values of spin-charge conversion efficiency or can the strongly spin-orbit coupled bulk states also contribute significantly? By studying the Fermi level dependence of spin pumping in topological insulator/ferrimagnetic insulator bilayers, we show that the spin Hall conductivity is constant when the Fermi level is tuned across the bulk band gap, consistent with a full bulk band calculation. The results suggest a new perspective, wherein bulk-surface correspondence allows spin-charge conversion to be simultaneously viewed either as coming from the full bulk band, or from spin-momentum locking of the surface state.
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