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Register a new userKinetic Monte Carlo simulation of shape transition in strained quantum dots
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Chi-Hang Lam
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The pyramid-to-dome transition in Ge$_{x}$Si$_{1-x}$ on Si(100) initiated by step bunching on pyramidal quantum dots is atomistically simulated using a novel multi-state lattice model incorporating effective surface reconstructions. Results are explained by a simple theory based on a shallow island approximation. Under given deposition conditions in $d$ dimensions, the shape transition is shown to occur at island size $n_c$ following $n_c^{1/d} propto x^{-zeta}$ independent of temperature and deposition rate, where $zetaalt 2$ and $x$ is the actual Ge concentration in the island. The transition has an energy barrier dominated by the facet interface energy. Fast deposition however can out-run and delay the transition to larger island sizes.
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Accelerated algorithms for simulating the morphological evolution of strained heteroeptiaxy based on a ball and spring lattice model in three dimensions are explained. We derive exact Greens function formalisms for boundary values in the associated lattice elasticity problems. The computational efficiency is further enhanced by using a superparticle surface coarsening approximation. Atomic hoppings simulating surface diffusion are sampled using a multi-step acceptance-rejection algorithm. It utilizes quick estimates of the atomic elastic energies from extensively tabulated values modulated by the local strain. A parameter controls the compromise between accuracy and efficiency of the acceptance-rejection algorithm.
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