Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userPi-stacking functionalization through micelles swelling: Application to the synthesis of single wall carbon nanotube/porphyrin complexes for energy transfer
175
0
0.0
(
0
)
Added by
Jean-Sebastien Lauret
Publication date
2009
fields
Physics
and research's language is
English
Ask ChatGPT about the research
No Arabic abstract
We report on a new, orginal and efficient method for pi-stacking functionalization of single wall carbon nanotubes. This method is applied to the synthesis of a high-yield light-harvesting system combining single wall carbon nanotubes and porphyrin molecules. We developed a micelle swelling technique that leads to controlled and stable complexes presenting an efficient energy transfer. We demonstrate the key role of the organic solvent in the functionalization mechanism. By swelling the micelles, the solvent helps the non water soluble porphyrins to reach the micelle core and allows a strong enhancement of the interaction between porphyrins and nanotubes. This technique opens new avenues for the functionalization of carbon nanostructures.
rate research
Read More
Functionalization of carbon nanotubes with hydrosoluble porphyrins (TPPS) is achieved by $pi$-stacking. The porphyrin/nanotube interaction is studied by means of optical absorption, photoluminescence and photoluminescence excitation spectroscopies. The main absorption line of the porphyrins adsorbed on nanotubes exhibits a 120 meV red shift, which we ascribe to a flattening of the molecule in order to optimize $pi-pi$ interactions. The porphyrin-nanotube complex shows a strong quenching of the TPPS emission while the photoluminescence intensity of the nanotubes is enhanced when the excitation laser is in resonance with the porphyrin absorption band. This reveals an efficient excitation transfer from the TPPS to the carbon nanotube.
We have reproducibly contacted gated single wall carbon nanotubes (SWCNT) to superconducting leads based on niobium. The devices are identified to belong to two transparency regimes: The Coulomb blockade and the Kondo regime. Clear signature of the superconducting leads is observed in both regimes and in the Kondo regime a narrow zero bias peak interpreted as a proximity induced supercurrent persist in Coulomb blockade diamonds with Kondo resonances.
We describe a method to fabricate clean suspended single-wall carbon nanotube (SWCNT) transistors hosting a single quantum dot ranging in length from a few 10s of nm down to $approx$ 3 nm. We first align narrow gold bow-tie junctions on top of individual SWCNTs and suspend the devices. We then use a feedback-controlled electromigration to break the gold junctions and expose nm-sized sections of SWCNTs. We measure electron transport in these devices at low temperature and show that they form clean and tunable single-electron transistors. These ultra-short suspended transistors offer the prospect of studying THz oscillators with strong electron-vibron coupling.
Electronic transport through a single-wall metallic carbon nanotube weakly coupled to one ferromagnetic and one nonmagnetic lead is analyzed in the sequential tunneling limit. It is shown that both the spin and charge currents flowing through such systems are highly asymmetric with respect to the bias reversal. As a consequence, nanotubes coupled to one nonmagnetic and one ferromagnetic lead can be effectively used as spin diodes whose functionality can be additionally controlled by a gate voltage.
We observe current rectification in a molecular diode consisting of a semiconducting single-wall carbon nanotube and an impurity. One half of the nanotube has no impurity, and it has a current-voltage (I-V) charcteristic of a typical semiconducting nanotube. The other half of the nanotube has the impurity on it, and its I-V characteristic is that of a diode. Current in the nanotube diode is carried by holes transported through the molecules one-dimensional subbands. At 77 Kelvin we observe a step-wise increase in the current through the diode as a function of gate voltage, showing that we can control the number of occupied one-dimensional subbands through electrostatic doping.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
