No Arabic abstract
We studied the intensity of resonant Raman scattering due to optical phonons in a planar II-VI-type semiconductor microcavity in the regime of strong coupling between light and matter. Two different sets of independent experiments were performed at near outgoing resonance with the middle polariton (MP)branch of the cavity. In the first, the Stokes-shifted photons were kept at exact resonance with the MP, varying the photonic or excitonic character of the polariton. In the second, only the incoming light wavelength was varied, and the resonant profile of the inelastic scattered intensity was studied when the system was tuned out of the resonant condition. Taking some matrix elements as free parameters, both independent experiments are quantitatively described by a model which incorporates lifetime effects in both excitons and photons, and the coupling of the cavity photons to the electron-hole continuum. The model is solved using a Greens function approach which treats the exciton-photon coupling nonperturbatively.
We calculate the intensity of the polariton mediated inelastic light scattering in semiconductor microcavities. We treat the exciton-photon coupling nonperturbatively and incorporate lifetime effects in both excitons and photons, and a coupling of the photons to the electron-hole continuum. Taking the matrix elements as fitting parameters, the results are in excellent agreement with measured Raman intensities due to optical phonons resonant with the upper polariton branches in II-VI microcavities with embedded CdTe quantum wells.
We present calculations of the intensity of polariton-mediated inelastic light scattering in semiconductor microcavities within a Greens function framework. In addition to reproducing the strong coupling of light and matter, this method also enables the inclusion of damping mechanisms in a consistent way. Our results show excellent agreement with recent Raman scattering experiments.
Terahertz emission between exciton-polariton branches in semiconductor microcavities is expected to be strongly stimulated in the polariton laser regime, due to the high density of particles in the lower state (final state stimulation effect). However, non-radiative scattering processes depopulate the upper state and greatly hinder the efficiency of such terahertz sources. In this work, we suggest a new scheme using multiple microcavities and exploiting the transition between two interband polariton branches located below the exciton level. We compare the non-radiative processes loss rates in single and double cavity devices and we show that a dramatic reduction can be achieved in the latter, enhancing the efficiency of the terahertz emission.
Entanglement generation in microcavity exciton-polaritons is an interesting application of the peculiar properties of these half-light/half-matter quasiparticles. In this paper we theoretically investigate their luminescence dynamics and entanglement formation in single, double, and triple cavities. We derive general expressions and selection rules for polariton-polariton scattering. We evaluate a number of possible parametric scattering schemes in terms of entanglement, and identify the ones that are experimentally most promising.
Temperature-dependent Raman spectra of TbMnO$_3$ from 5 K to 300 K in the spectral range of 200 to 1525 cm$^{-1}$ show five first-order Raman allowed modes and two high frequency modes. The intensity ratio of the high frequency Raman band to the corresponding first order Raman mode is nearly constant and high ($sim$ 0.6) at all temperatures, suggesting a orbiton-phonon mixed nature of the high frequency mode. One of the first order phonon modes shows anomalous softening below T$_N$ ($sim$ 46 K), suggesting a strong spin-phonon coupling.