No Arabic abstract
We present measurements of resistivity and thermopower of Fe1+xTe1-ySey single crystalline samples with y=0, 0.1, 0.2, 0.3 and 0.45 in zero field and in a magnetic field B=8T. We propose a qualitative analysis of the temperature behavior of S, where the samples are described as almost compensated semimetals: different electron and hole bands with similar carrier concentrations compete and their relative contribution to the thermoelectric transport depends on the respective filling, mobility and coupling with phonons. For y>=0.2, superconductivity occurs and the optimum Se-doping level for a maximum Tc of 13 K turns out to be y=0.3. At low temperatures, evidence of a contribution to S by an excitation-drag mechanism is found, while at high temperatures a strikingly flat behavior of S is explained within a narrow band Hubbard model. The support of a theoretical background which could provide band resolved parameters such as carrier density, mobility and electron-phonon coupling of each band would allow to extract from our data valuable quantitative information on the transport and superconducting mechanisms of these iron chalcogenides.
Superconductivity in anti-PbO-type iron chalcogenides Fe1-xTe1-ySey (x = 0, 0.1, y = 0.1 0.4) depends on the amount (x) of interstitial iron atoms located between the FeTe1-ySey layers. Non-superconducting samples of nominal Fe1.1Te1-ySey convert to superconductors with critical temperatures up to 14 K after annealing at 300{deg}C in an oxygen atmosphere. The process is irreversible upon subsequent hydrogen annealing. Magnetic measurements are consistent with the formation of iron oxides suggesting that oxygen annealing preferably extracts interstitial iron from Fe1-xTe1-ySey which interfere with superconductivity.
We report the observation of photo-Seebeck effect in tetragonal PbO crystals. The photo-induced carriers contribute to the transport phenomena, and consequently the electrical conductivity increases and the Seebeck coefficient decreases with increasing photon flux density. A parallel-circuit model is used to evaluate the actual contributions of photo-excited carriers from the measured transport data. The photo-induced carrier concentration estimated from the Seebeck coefficient increases almost linearly with increasing photon flux density, indicating a successful photo-doping effect on the thermoelectric property. The mobility decreases by illumination but the reduction rate strongly depends on the illuminated photon energy. Possible mechanisms of such photon-energy-dependent mobility are discussed.
We report resistivity and the Hall effect measurements in the normal and superconducting states of MgB2 single crystal. The resistivity has been found to be anisotropic with slightly temperature dependent resistivity ratio of about 3.5. The Hall constant, with a magnetic field parallel to the Mg and B sheets is negative in contrast to the hole-like Hall response with a field directed along the c-axis indicating presence of both types of charge carriers and, thus, multi-band electronic structure of MgB2. The Hall effect in the mixed state shows no sign change anomaly reproducing the Hall effect behavior in clean limit type-II superconductors.
Microscopic, structural, transport and thermodynamic measurements of single crystalline Ba(Fe1-xTMx)2As2 (TM = Ni and Cu) series, as well as two mixed TM = Cu / Co series, are reported. All the transport and thermodynamic measurements indicate that the structural and magnetic phase transitions at 134 K in pure BaFe2As2 are monotonically suppressed and increasingly separated in a similar manner by these dopants. In the Ba(Fe1-xNix)2As2 (x =< 0.072), superconductivity, with Tc up to 19 K, is stabilized for 0.024 =< x =< 0.072. In the Ba(Fe1-xCux)2As2 (x =< 0.356) series, although the structural and magnetic transitions are suppressed, there is only a very limited region of superconductivity: a sharp drop of the resistivity to zero near 2.1 K is found only for the x = 0.044 samples. In the Ba(Fe1-x-yCoxCuy)2As2 series, superconductivity, with Tc values up to 12 K (x ~ 0.022 series) and 20 K (x ~ 0.047 series), is stabilized. Quantitative analysis of the detailed temperature-dopant concentration (T-x) and temperature-extra electrons (T-e) phase diagrams of these series shows that there exists a limited range of the number of extra electrons added, inside which the superconductivity can be stabilized if the structural and magnetic phase transitions are suppressed enough. Moreover, comparison with pressure-temperature phase diagram data, for samples spanning the whole doping range, further reenforces the conclusion that suppression of the structural / magnetic phase transition temperature enhances Tc on the underdoped side, but for the overdoped side Tcmax is determined by e. Therefore, by choosing the combination of dopants that are used, we can adjust the relative positions of the upper phase lines (structural and magnetic phase transitions) and the superconducting dome to control the occurrence and disappearance of the superconductivity in transition metal, electron-doped BaFe2As2.
The effects of pressure generated in a liquid medium, clamp, pressure cell on the in-plane and c-axis resistance, temperature-dependent Hall coefficient and low temperature, magnetoresistance in CaFe2As2 are presented. The T - P phase diagram, including the observation of a complete superconducting transition in resistivity, delineated in earlier studies is found to be highly reproducible. The Hall resistivity and low temperature magnetoresistance are sensitive to different states/phases observed in CaFe2As2. Auxiliary measurements under uniaxial, c-axis, pressure are in general agreement with the liquid medium clamp cell results with some difference in critical pressure values and pressure derivatives. The data may be viewed as supporting the potential importance of non-hydrostatic components of pressure in inducing superconductivity in CaFe2As2.