Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userNon-invasive probing of random local potential fluctuations in ZnCdSe/ZnSe quantum wells
137
0
0.0
(
0
)
Authors
D. A. Fuhrmann
Ask ChatGPT about the research
No Arabic abstract
Temperature dependence and recombination behavior of trapped charge carriers in ZnCdSe/ZnSe multiple quantum wells are investigated employing surface acoustic waves. These weakly perturb the carrier system, but remain highly sensitive even at small conductivities. Using this non-invasive probe we are able to detect persistent photoconductivity minutes after optical excitation. Measurement of exciting photon energies, the temperature dependence and ability to quench the conductivity with energies lower than the bandgap, support the notion of spatial separation of electrons and holes in the wells, due to random local potential fluctuations possibly induced by compositional fluctuations.
rate research
Read More
We present a detailed investigation of excitonic absorption in $Zn_{0.69}Cd_{0.31}Se/ZnSe$ quantum wells under the application of a perpendicular magnetic field. The large energy separation between heavy- and light-hole excitons allows us to clearly resolve and identify magneto-excitonic absorption resonant with the continuum edge of the 1S heavy-hole exciton. Experimental values of the exciton binding energy are compared with results of a theoretical model that includes the exciton-phonon interaction. The remarkable agreemeent found unambiguously indicates the predominant polaronic character of excitons in ZnSe-based heterostructures.
A new mechanism for exciton lasing in ZnSe/ZnCdSe quantum wells is proposed. Lasing, occurring below the lowest exciton line, may be associated with a BCS-like condensed (coherent) exciton state. This state is most stable at low temperatures for densities in the transition region separating the exciton Bose gas and the coherent exciton state. Calculations show the gain region to lie below the exciton line and to be separated from the absorption regime by a transparency region of width, for example, about 80 meV for a 90 Angstrom ZnSe/Zn_(0.75)Cd_(0.25)Se quantum well. Experimental observation of the transparency region using differential spectroscopy would confirm this picture.
: n-type Ge/SiGe asymmetric-coupled quantum wells represent the building block of a variety of nanoscale quantum devices, including recently proposed designs for a silicon-based THz quantum cascade laser. In this paper, we combine structural and spectroscopic experiments on 20-module superstructures, each featuring two Ge wells coupled through a Ge-rich tunnel barrier, as a function of the geometry parameters of the design and the P dopant concentration. Through the comparison of THz spectroscopic data with numerical calculations of intersubband optical absorption resonances, we demonstrated that it is possible to tune by design the energy and the spatial overlap of quantum confined subbands in the conduction band of the heterostructures. The high structural/interface quality of the samples and the control achieved on subband hybridization are the promising starting point towards a working electrically pumped light-emitting device.
Experimental and theoretical studies of all-optical spin pump and probe of resident electrons in CdTe/(Cd,Mg)Te semiconductor quantum wells are reported. A two-color Hanle-MOKE technique (based on continuous-wave excitation) and time-resolved Kerr rotation in the regime of resonant spin amplification (based on pulsed excitation) provide a complementary measure of electron spin relaxation time. Influence of electron localization on long-lived spin coherence is examined by means of spectral and temperature dependencies. Various scenarios of spin polarization generation (via the trion and exciton states) are analyzed and difference between continuous-wave and pulsed excitations is considered. Effects related to inhomogeneous distribution of $g$-factor and anisotropic spin relaxation time on measured quantities are discussed.
Photo-luminescence intermittency (blinking) in semiconductor nanocrystals (NCs), a phenomenon ubiquitous to single-emitters, is generally considered to be temporally random intensity fluctuations between bright (On) and dark (Off) states. However, individual quantum-dots (QDs) rarely exhibit such telegraphic signal, and yet, the vast majority of single-NC blinking data are analyzed using a single fixed threshold, which generates binary trajectories. Further, blinking dynamics can vary dramatically over NCs in the ensemble, and it is unclear whether the exponents (m) of single-particle On-/Off-time distributions (P(t)-On/Off), which are used to validate mechanistic models of blinking, are narrowly distributed or not. Here, we sub-classify an ensemble based on the emissivity of QDs, and subsequently compare the (sub)ensemble behaviors. To achieve this, we analyzed a large number (>1000) of intensity trajectories for a model system, Mn+2 doped ZnCdS QDs, which exhibits diverse blinking dynamics. An intensity histogram dependent thresholding method allowed us to construct distributions of relevant blinking parameters (such as m). Interestingly, we find that single QD P(t)-On/Off s follow either truncated power law or power law, and their relative proportion vary over sub-populations. Our results reveal a remarkable variation in m(On/Off) amongst as well as within sub-ensembles, which implies multiple blinking mechanisms being operational among various QDs. We further show that the m(On/Off) obtained via cumulative single-particle P(t)-On/Off is clearly distinct from the weighted mean value of all single-particle m(On/Off), an evidence for the lack of ergodicity. Thus, investigation and analyses of a large number of QDs, albeit for a limited time-span of few decades, is crucial to characterize possible blinking mechanisms and heterogeneity therein
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
