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Register a new userEngineering artificial graphene in a two-dimensional electron gas
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At low energy, electrons in doped graphene sheets behave like massless Dirac fermions with a Fermi velocity which does not depend on carrier density. Here we show that modulating a two-dimensional electron gas with a long-wavelength periodic potential with honeycomb symmetry can lead to the creation of isolated massless Dirac points with tunable Fermi velocity. We provide detailed theoretical estimates to realize such artificial graphene-like system and discuss an experimental realization in a modulation-doped GaAs quantum well. Ultra high-mobility electrons with linearly-dispersing bands might open new venues for the studies of Dirac-fermion physics in semiconductors.
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Cyclotron resonance has been measured in far-infrared transmission of GaAs/Al$_x$Ga$_{1-x}$As heterostructures with an etched hexagonal lateral superlattice. Non-linear dependence of the resonance position on magnetic field was observed as well as its splitting into several modes. Our explanation, based on a perturbative calculation, describes the observed phenomena as a weak effect of the lateral potential on the two-dimensional electron gas. Using this approach, we found a correlation between parameters of the lateral patterning and the created effective potential and obtain thus insights on how the electronic miniband structure has been tuned. The miniband dispersion was calculated using a simplified model and allowed us to formulate four basic criteria that have to be satisfied to reach graphene-like physics in such systems.
Based on the Born-Oppemheimer approximation, we divide total electron Hamiltonian in a spinorbit coupled system into slow orbital motion and fast interband transition process. We find that the fast motion induces a gauge field on slow orbital motion, perpendicular to electron momentum, inducing a topological phase. From this general designing principle, we present a theory for generating artificial gauge field and topological phase in a conventional two-dimensional electron gas embedded in parabolically graded GaAs/In$_{x}$Ga$_{1-x}$As/GaAs quantum wells with antidot lattices. By tuning the etching depth and period of antidot lattices, the band folding caused by superimposed potential leads to formation of minibands and band
Majorana zero modes (MZMs)--bearing potential applications for topological quantum computing--are verified in quasi-one-dimensional (1D) Fermion systems, including semiconductor nanowires, magnetic atomic chains, planar Josephson junctions. However, the existence of multi-bands in these systems makes the MZMs fragile to the influence of disorder. Moreover, in practical perspective, the proximity induced superconductivity may be difficult and restricted for 1D systems. Here, we propose a flexible route to realize MZMs through 1D topological kink states by engineering a 2D electron gas with antidot lattices, in which both the aforementioned issues can be avoided owing to the robustness of kink states and the intrinsically attainable superconductivity in high-dimensional systems. The MZMs are verified to be quite robust against disorders and the bending of kink states, and can be conveniently tuned by varying the Rashba spin-orbit coupling strength. Our proposal provides an experimental feasible platform for MZMs with systematic manipulability and assembleability based on the present techniques in 2D electron gas system.
Using scanning gate microscopy (SGM), we probe the scattering between a beam of electrons and a two-dimensional electron gas (2DEG) as a function of the beams injection energy, and distance from the injection point. At low injection energies, we find electrons in the beam scatter by small-angles, as has been previously observed. At high injection energies, we find a surprising result: placing the SGM tip where it back-scatters electrons increases the differential conductance through the system. This effect is explained by a non-equilibrium distribution of electrons in a localized region of 2DEG near the injection point. Our data indicate that the spatial extent of this highly non-equilibrium distribution is within ~1 micrometer of the injection point. We approximate the non-equilibrium region as having an effective temperature that depends linearly upon injection energy.
In a high mobility two-dimensional electron gas (2DEG) in a GaAs/AlGaAs quantum well we observe a strong magnetoresistance. In lowering the electron density the magnetoresistance gets more pronounced and reaches values of more than 300%. We observe that the huge magnetoresistance vanishes for increasing the temperature. An additional density dependent factor is introduced to be able to fit the parabolic magnetoresistance to the electron-electron interaction correction.
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