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Register a new userStable mode-locked pulses from mid-infrared semiconductor lasers
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We report the unequivocal demonstration of mid-infrared mode-locked pulses from a semiconductor laser. The train of short pulses was generated by actively modulating the current and hence the optical gain in a small section of an edge-emitting quantum cascade laser (QCL). Pulses with pulse duration at full-width-at-half-maximum of about 3 ps and energy of 0.5 pJ were characterized using a second-order interferometric autocorrelation technique based on a nonlinear quantum well infrared photodetector. The mode-locking dynamics in the QCLs was modelled and simulated based on Maxwell-Bloch equations in an open two-level system. We anticipate our results to be a significant step toward a compact, electrically-pumped source generating ultrashort light pulses in the mid-infrared and terahertz spectral ranges.
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We study the effect of noise on the dynamics of passively mode-locked semiconductor lasers both experimentally and theoretically. A method combining analytical and numerical approaches for estimation of pulse timing jitter is proposed. We investigate how the presence of dynamical features such as wavelength bistability affects timing jitter.
Quantum cascade lasers (QCL) have revolutionized the generation of mid-infrared light. Yet, the ultrafast carrier transport in mid-infrared QCLs has so far constituted a seemingly insurmountable obstacle for the formation of ultrashort light pulses. Here, we demonstrate that careful quantum design of the gain medium and control over the intermode beat synchronization enable transform-limited picosecond pulses from QCL frequency combs. Both an interferometric radio-frequency technique and second-order autocorrelation shed light on the pulse dynamics and confirm that mode-locked operation is achieved from threshold to rollover current. Being electrically pumped and compact, mode-locked QCLs pave the way towards monolithically integrated non-linear photonics in the molecular fingerprint region beyond 6 $mu$m wavelength.
We consider design optimization of passively mode-locked two-section semiconductor lasers that incorporate intracavity grating spectral filters. Our goal is to develop a method for finding the optimal wavelength location for the filter in order to maximize the region of stable mode-locking as a function of drive current and reverse bias in the absorber section. In order to account for material dispersion in the two sections of the laser, we use analytic approximations for the gain and absorption as a function of carrier density and frequency. Fits to measured gain and absorption curves then provide inputs for numerical simulations based on a large signal accurate delay-differential model of the mode-locked laser. We show how a unique set of model parameters for each value of the drive current and reverse bias voltage can be selected based on the variation of the net gain along branches of steady-state solutions of the model. We demonstrate the validity of this approach by demonstrating qualitative agreement between numerical simulations and the measured current-voltage phase-space of a two-section Fabry-Perot laser. We then show how to adapt this method to determine an optimum location for the spectral filter in a notional device with the same material composition, based on the targeted locking range, and accounting for the modal selectivity of the filter.
The influence of nonlinear properties of semiconductor saturable absorbers on ultrashort pulse generation was investigated. It was shown, that linewidth enhancement, quadratic and linear ac Stark effect contribute essentially to the mode locking in cw solid-state lasers, that can increase the pulse stability, decrease pulse duration and reduce the mode locking threshold
BGGSe is a newly developed nonlinear material that is attractive for ultrabroad frequency mixing and ultrashort pulse generation due to its comparably low dispersion and high damage threshold.In a first experiment, we show that a long crystal length of 2.6 mm yields a pulse energy of 21 pJ at 100 MHz with a spectral bandwidth covering 5.8 to 8.5 microns. The electric field of the carrier-envelope-phase stable pulse is directly measured with electro-optical sampling and reveals a pulse duration of 91 fs, which corresponds to sub-four optical cycles, thus confirming some of the prospects of the material for ultrashort pulse generation and mid-infrared spectroscopy.
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