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Register a new userBandwidth-controlled Mott transition in kappa-(BEDT-TTF)2Cu[N(CN)2]Br{x}Cl{1-x}: Optical studies of correlated carriers
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In the two-dimensional organic charge-transfer salts kappa-(BEDT-TTF)2Cu[N(CN)2]Br{x}Cl{1-x} a systematic variation of the Br content from x = 0 to 0.9 allows us to tune the Mott transition by increasing the bandwidth. At temperatures below 50 K, an energy gap develops in the Cl-rich samples and grows to approximately 1000 cm-1 for T -> 0. With increasing Br concentration spectral weight shifts into the gap region and eventually fills it up completely. As the samples with x = 0.73, 0.85 and 0.9 become metallic at low temperatures, a Drude-like response develops due to the coherent quasiparticles. Here, the quasiparticle scattering rate shows a omega^2 dependence and the effective mass of the carriers is enhanced in agreement with the predictions for a Fermi liquid. These typical signatures of strong electron-electron interactions are more pronounced for compositions close to the critical value x_c approx 0.7 where the metal-to-insulator transition occurs.
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Static susceptibility of kappa-[(BEDT-TTF)1-x(BEDSe-TTF)x]2Cu[N(CN)2]Br alloys with the BEDSe-TTF content near the border-line of ambient pressure superconductivity (x~0.3) has been measured as a function of temperature, magnetic field, and pressure. A non-monotonic pressure dependence is observed for both the superconducting critical temperature and superconducting volume fraction, with both quantities showing growth under pressure in the initial pressure range P < 0.3 kbar. The results are discussed in comparison with the data on the related kappa-phase BEDT-TTF superconductors in which not a cation but anion sublattice is modified by alloying, namely the family kappa-(BEDT-TTF)2Cu[N(CN)2]Cl1-xBrx. PACS numbers: 74.62.Fj, 74.70.Kn.
The interplane optical spectrum of the organic superconductor kappa-(BEDT-TTF)2Cu[N(CN)2]Br was investigated in the frequency range from 40 to 40,000 cm-1. The optical conductivity was obtained by Kramers-Kronig analysis of the reflectance. The absence of a Drude peak at low frequency is consistent with incoherent conductivity but in apparent contradiction to the metallic temperature dependence of the DC resistivity. We set an upper limit to the interplane transfer integral of tb = 0.1 meV. A model of defect-assisted interplane transport can account for this discrepancy. We also assign the phonon lines in the conductivity to the asymmetric modes of the ET molecule.
The effect of disorder on the electronic properties near the Mott transition is studied in an organic superconductor $kappa$-(BEDT-TTF)$_{2}$Cu[N(CN)$_{2}$]Br, which is systematically irradiated by X-ray. We observe that X-ray irradiation causes Anderson-type electron localization due to molecular disorder. The resistivity at low temperatures demonstrates variable range hopping conduction with Coulomb interaction. The experimental results show clearly that the electron localization by disorder is enhanced by the Coulomb interaction near the Mott transition.
The Mott insulator kappa-(BEDT-TTF)2Cu[N(CN)2]Cl consists of molecular dimers arranged on an anisotropic triangular lattice and develops a canted antiferromagnetic ground state. It has recently been suggested that this system features purely electronic ferroelectricity which requires an electric dipole moment. Optical spectroscopy clearly rules out charge imbalance in this system, which excludes the existence of quantum electric dipoles on the dimers and subsequently a dipolar spin coupling. We suggest that the prominent in-plane dielectric response in kappa-(BEDT-TTF)2Cu[N(CN)2]Cl is due to short-range discommensurations of the antiferromagnetic phase in the temperature range 30 < T < 50 K, and domain wall relaxations at lower temperatures.
We investigated the infrared optical spectra of an organic dimer Mott insulator $kappa$-(BEDT-TTF)$_{2}$Cu[N(CN)$_{2}$]Cl, which was irradiated with X-rays. We observed that the irradiation caused a large spectral weight transfer from the mid-infrared region, where interband transitions in the dimer and Mott-Hubbard bands take place, to a Drude part in a low-energy region; this caused the Mott gap to collapse. The increase of the Drude part indicates a carrier doping into the Mott insulator due to irradiation defects. The strong redistribution of the spectral weight demonstrates that the organic Mott insulator is very close to the phase border of the bandwidth-controlled Mott transition.
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