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Register a new userNon-resonant dot-cavity coupling and its applications in resonant quantum dot spectroscopy
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We present experimental investigations on the non-resonant dot-cavity coupling of a single quantum dot inside a micro-pillar where the dot has been resonantly excited in the s-shell, thereby avoiding the generation of additional charges in the QD and its surrounding. As a direct proof of the pure single dot-cavity system, strong photon anti-bunching is consistently observed in the autocorrelation functions of the QD and the mode emission, as well as in the cross-correlation function between the dot and mode signals. Strong Stokes and anti-Stokes-like emission is observed for energetic QD-mode detunings of up to ~100 times the QD linewidth. Furthermore, we demonstrate that non-resonant dot-cavity coupling can be utilized to directly monitor and study relevant QD s-shell properties like fine-structure splittings, emission saturation and power broadening, as well as photon statistics with negligible background contributions. Our results open a new perspective on the understanding and implementation of dot-cavity systems for single-photon sources, single and multiple quantum dot lasers, semiconductor cavity quantum electrodynamics, and their implementation, e.g. in quantum information technology.
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We compare the photoluminescence spectrum of an indium arsenide (InAs) quantum dot (QD) that is strongly coupled to a photonic crystal cavity under above band excitation (ABE) and quasi-resonant excitation (QRE). We show that off-resonant cavity feeding, which manifests itself in a bare cavity emission peak at the strong coupling point, is suppressed by as much as 40% under QRE relative to ABE. We attribute this suppression to a reduced probability of QD charging because electrons and holes are created in pairs inside the QD. We investigate the pump power dependence of the cavity feeding and show that, below saturation, the ratio of the bare cavity emission to polariton emission for ABE is independent of pump power, while for QRE there is linear pump power dependence. These results suggest that the biexciton plays an important role in cavity feeding for QRE.
We study the processes in a quantum dot and its surrounds under resonant excitation with the addition of weak non-resonant light. We observe a decrease in inhomogeneous emission linewidth, as well as previously observed enhancement of resonant fluorescence (RF). Scanning excitation and detection frequencies, we distinguish between homogeneous and inhomogeneous broadening. Monte Carlo simulations model the enhanced RF only if we include charge-carrier loss from the quantum dot induced by the resonant laser. The cause of the linewidth narrowing is predominantly independent of the enhanced RF.
Recent experiments have demonstrated that for a quantum dot in an optical resonator off-resonant cavity mode emission can occur even for detunings of the order of 10 meV. We show that Coulomb mediated Auger processes based on additional carriers in delocalized states can facilitate this far off-resonant emission. Using a novel theoretical approach for a non-perturbative treatment of the Auger-assisted quantum-dot carrier recombination, we present numerical calculations of the far off-resonant cavity feeding rate and cavity mean photon number confirming efficient coupling at higher densities of carriers in the delocalized states. In comparison to fast Auger-like intraband scattering processes, we find a reduced overall efficiency of Coulomb-mediated interband transitions due the required electron-hole correlations for the recombination processes.
We experimentally demonstrate that the Mollow triplet sidebands of a quantum dot strongly coupled to a cavity exhibit anomalous power induced broadening and enhanced emission when one sideband is tuned over the cavity frequency. We observe a nonlinear increase of the sideband linewidth with excitation power when the Rabi frequency exceeds the detuning between the quantum dot and the cavity, consistent with a recent theoretical model that accounts for acoustic phonon-induced processes between the exciton and the cavity. In addition, the sideband tuned to the cavity shows strong resonant emission enhancement.
A scheme of resonant tunneling through the metastable state of semiconductor quantum dot is presented and implemented in the transport study of freestanding InAs quantum dots grown on GaAs(001) under illumination using conductive atomic force microscopy. The metastable state is achieved by capturing one photoexcited Fermi hole in the valence energy level of InAs quantum dot. Resonant tunneling through single quantum dot can be observed at room temperature due to the existence of metastable state. The amplitude of tunneling current depends on the barrier arrangement and the concentration of photoexcited holes around the quantum dot, but is found steady when the height of dot varies from 1.8 to 9.9 nm, which are in good agreement with the proposed model. The experiment demonstrates a solution of room temperature operated single electron device to amplify the photocurrent by the singularity of resonant tunneling in epitaxial quantum dot.
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