Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userGiant thermopower and figure of merit in single-molecule devices
382
0
0.0
(
0
)
Ask ChatGPT about the research
No Arabic abstract
We present a study of the thermopower $S$ and the dimensionless figure of merit $ZT$ in molecules sandwiched between gold electrodes. We show that for molecules with side groups, the shape of the transmission coefficient can be dramatically modified by Fano resonances near the Fermi energy, which can be tuned to produce huge increases in $S$ and $ZT$. This shows that molecules exhibiting Fano resonances have a high efficiency of thermoelectric cooling which is not present for conventional un-gated molecules with only delocalized states along their backbone.
rate research
Read More
We present a study of the thermal conductivity k and the thermopower S of single crystals of La_{1-x}Sr_xCoO_3 with 0<= x <= 0.3. For all Sr concentrations La_{1-x}Sr_xCoO_3 has rather low k values, whereas S strongly changes as a function of x. We discuss the influence of the temperature- and the doping-induced spin-state transitions of the Co ions on both, S and k. From S, k, and the electrical resistivity rho we derive the thermoelectric figure of merit Z=S^2/(k*rho). For intermediate Sr concentrations we find notably large values of Z indicating that Co-based materials could be promising candidates for thermoelectric cooling.
Thermoelectric (TE) conversion in conducting materials is of eminent importance for providing renewable energy and solid-state cooling. Although traditionally, the Seebeck effect plays a key role for the TE figure of merit zST, it encounters fundamental constraints hindering its conversion efficiency. Most notably, there are the charge compensation of electrons and holes that diminishes this effect, and the intertwinement of the corresponding electrical and thermal conductivities through the Wiedemann-Franz (WF) law which makes their independent optimization in zST impossible. Here, we demonstrate that in the Dirac semimetal Cd3As2 the Nernst effect, i.e., the transverse counterpart of the Seebeck effect, can generate a large TE figure of merit zNT. At room temperature, zNT = 0.5 in a small field of 2 T; it significantly surmounts its longitudinal counterpart zST for any field and further increases upon warming. A large Nernst effect is generically expected in topological semimetals, benefiting from both the bipolar transport of compensated electrons and holes and their high mobilities. In this case, heat and charge transport are orthogonal, i.e., not intertwined by the WF law anymore. More importantly, further optimization of zNT by tuning the Fermi level to the Dirac node can be anticipated due to not only the enhanced bipolar transport, but also the anomalous Nernst effect arising from a pronounced Berry curvature. A combination of the former topologically trivial and the latter nontrivial advantages promises to open a new avenue towards high-efficient transverse thermoelectricity.
Dimensionless thermoelectric figure of merit $ZT$ is investigated for two-dimensional organic conductors $tau-(EDO-S,S-DMEDT-TTF)_2(AuI_2)_{1+y}$, $tau$-(EDT-S,S-DMEDT-TTF)_2(AuI_2)_{1+y}$ and $tau$-(P-S,S-DMEDT-TTF)_2(AuI_2)_{1+y}$ ($y le 0.875$), respectively. The $ZT$ values were estimated by measuring electrical resistivity, thermopower and thermal conductivity simultaneously. The largest $ZT$ is 2.7 $times$ 10$^{-2}$ at 155 K for $tau-(EDT-S,S-DMEDT-TTF)_2(AuI_2)_{1+y}$, 1.5 $times$ 10$^{-2}$ at 180 K for $tau-(EDO-S,S-DMEDT-TTF)_2(AuI_2)_{1+y}$ and 5.4 $times$ 10$^{-3}$ at 78 K for $tau-(P-S,S-DMEDT-TTF)_2(AuI_2)_{1+y}$, respectively. Substitution of the donor molecules fixing the counter anion revealed EDT-S,S-DMEDT-TTF is the best of the three donors to obtain larger $ZT$.
Half-Heusler alloys (MgAgSb structure) are promising thermoelectric materials. RNiSn half-Heusler phases (R=Hf, Zr, Ti) are the most studied in view of their thermal stability. The highest dimensionless figure of merit (ZT) obtained is ~1 in the temperature range ~450-900oC, primarily achieved in nanostructured alloys. Through proper annealing, ZT~1.2 has been obtained in a previous ZT~1 n-type (Hf,Zr)NiSn phase without the nanostructure. There is an appreciable increase in the power factor, decrease in charge carrier density, and increase in carrier mobility. The findings are attributed to the improvement of structural order. Present approach may be applied to optimize the functional properties of Heusler-type alloys.
The influence of periodic edge vacancies and antidot arrays on the thermoelectric properties of zigzag graphene nanoribbons is investigated. Using the Greens function method, the tight-binding approximation for the electron Hamiltonian and the 4th nearest neighbor approximation for the phonon dynamical matrix, we calculate the Seebeck coefficient and the thermoelectric figure of merit. It is found that, at a certain periodic arrangement of vacancies on both edges of zigzag nanoribbon, a finite band gap opens and almost twofold degenerate energy levels appear. As a result, a marked increase in the Seebeck coefficient takes place. It is shown that an additional enhancement of the thermoelectric figure of merit can be achieved by a combination of periodic edge defects with an antidot array.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
