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Register a new userCharacterization of a Single Crystal Diamond Pixel Detector in a High Energy Particle Beam
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Diamond has been developed as a material for the detection of charged particles by ionization. Its radiation hardness makes it an attractive material for detectors operated in a harsh radiation environment e.g. close to a particle beam as is the case for beam monitoring and for pixel vertex detectors. Poly-crystalline chemical vapor deposition (CVD) diamond has been studied as strip and pixel detectors so far. We report on a first-time characterization of a single-crystal diamond pixel detector in a 100 GeV particle beam at CERN. The detectors are made from irregularly shaped single crystal sensors, 395mm thick, mated by bump bonding to a front-end readout IC as used in the ATLAS pixel detector with pixel sizes of 50 x 400 mm2. The diamond sensors show excellent charge collection properties: full collection over the entire detector volume, clean and narrow signal charge distributions with a S/N value of >100 and a hit detection efficiency of (99.9 +- 0.1)%. The measured spatial resolution for particles under normal incidence in the shorter pixel direction is (8.9 +- 0.1) um.
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The Belle II experiment at the Super B factory SuperKEKB, an asymmetric $e^+e^-$ collider located in Tsukuba, Japan, is tailored to perform precision B physics measurements. The centre of mass energy of the collisions is equal to the rest mass of the $Upsilon(4S)$ resonance of $m_{Upsilon(4S)} = 10.58,rm GeV$. A high vertex resolution is essential for measuring the decay vertices of B mesons. Typical momenta of the decay products are ranging from a few tens of MeV to a few GeV and multiple scattering has a significant impact on the vertex resolution. The VerteX Detector (VXD) for Belle II is therefore designed to have as little material as possible inside the acceptance region. Especially the innermost two layers, populated by the PiXel Detector (PXD), have to be ultra-thin. The PXD is based on DEpleted P-channel Field Effect Transistors (DEPFETs) with a thickness of only $75,rmmu m$. Spatial resolution and hit efficiency of production detector modules were studied in beam tests performed at the DESY test beam facility. The spatial resolution was investigated as a function of the incidence angle and improvements due to charge sharing are demonstrated. The measured module performance is compatible with the requirements for Belle II.
This paper reports on the fabrication and characterization of a high purity monocrystalline diamond detector with buried electrodes realized by the selective damage induced by a focused 6 MeV carbon ion beam scanned over a pattern defined at the micrometric scale. A suitable variable-thickness mask was deposited on the diamond surface in order to modulate the penetration depth of the ions and to shallow the damage profile toward the surface. After the irradiation, the sample was annealed at high temperature in order to promote the conversion to the graphitic phase of the end-of-range regions which experienced an ion-induced damage exceeding the damage threshold, while recovering the sub-threshold damaged regions to the highly resistive diamond phase. This process provided conductive graphitic electrodes embedded in the insulating diamond matrix; the presence of the variable-thickness mask made the terminations of the channels emerging at the diamond surface and available to be connected to an external electronic circuit. In order to evaluate the quality of this novel microfabrication procedure based on direct ion writing, we performed frontal Ion Beam Induced Charge (IBIC) measurements by raster scanning focused MeV ion beams onto the diamond surface. Charge collection efficiency (CCE) maps were measured at different bias voltages. The interpretation of such maps was based on the Shockley-Ramo-Gunn formalism.
In order to evaluate the charge collection efficiency (CCE) profile of single-crystal diamond devices based on a p type/intrinsic/metal configuration, a lateral Ion Beam Induced Charge (IBIC) analysis was performed over their cleaved cross sections using a 2 MeV proton microbeam. CCE profiles in the depth direction were extracted from the cross-sectional maps at variable bias voltage. IBIC spectra relevant to the depletion region extending beneath the frontal Schottky electrode show a 100% CCE, with a spectral resolution of about 1.5%. The dependence of the width of the high efficiency region from applied bias voltage allows the constant residual doping concentration of the active region to be evaluated. The region where the electric field is absent shows an exponentially decreasing CCE profile, from which it is possible to estimate the diffusion length of the minority carriers by means of a drift-diffusion model.
Deep Ion Beam Lithography (DIBL) has been used for the direct writing of buried graphitic regions in monocrystalline diamond with micrometric resolution. Aiming at the development and the characterization of a fully ion-beam-micromachined solid state ionization chamber, a device with interdigitated electrodes was fabricated by using a 1.8 MeV He+ ion microbeam scanning on a homoepitaxial, grown by chemical vapour deposition (CVD). In order to evaluate the ionizing-radiation-detection performance of the device, charge collection efficiency (CCE) maps were extracted from Ion Beam Induced Charge (IBIC) measurements carried out by probing different arrangements of buried microelectrodes. The analysis of the CCE maps allowed for an exhaustive evaluation of the detector features, in particular the individuation of the different role played by electrons and holes in the formation of the induced charge pulses. Finally, a comparison of the performances of the detector with buried graphitic electrodes with those relevant to conventional metallic surface electrodes evidenced the formation of a dead layer overlying the buried electrodes as a result of the fabrication process.
Optimization of an area detector involves compromises between various parameters like frame rate, read noise, dynamic range and pixel size. We have implemented and tested a novel front-end binning design in a photon-integrating hybrid pixel array detector using the MM-PAD-2.0 pixel architecture. In this architecture, the pixels can be optionally binned in a 2$times$2 pixel configuration using a network of switches to selectively direct the output of 4 sensor pixels to a single amplifier input. Doing this allows a trade-off between frame rate and spatial resolution. Tests show that the binned pixels perform well, but with some degradation on performance as compared to an un-binned pixel. The increased parasitic input capacitance does reduce the signal collected per x-ray as well as increases the noise of the pixel. The increase in noise is, however, less than the factor of 2 increase one would observe for binning in post-processing. Spatial scans across the binned pixels show that no measured signal intensity is lost at the inner binning unit boundaries. In the high flux regime, at a 2$times$2 pixel wide beam spot (FWHM) size, binned mode responds linearly up to a photon flux of ~10$^{7}$ x-rays/s, and performs comparably with un-binned mode up to a photon flux of ~10$^{8}$ x-rays/s. While this study demonstrates a proof of concept for front-end binning in integrating detectors, we also identify changes to this early-stage prototype which can further improve the performance of binning pixel structures.
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