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Register a new userExciton Dynamics on Rubrene (001) Crystal Surfaces with Microstructure Confinement
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The exciton dynamics on flat (001) rubrene crystal surfaces have been compared with those under confined pyramidal geometry by time-resolved photoluminescence with micrometer spatial resolution. The luminescence spectra can be interpreted in terms of generation of a free and a self-trapped exciton. Their ratio depends significantly on the structural size which we explain by the optical absorption profile of the pyramids in combination with the exciton diffusion constant. For the latter a lower limit of 0.2 cm2/s at 4 K has been estimated. Temperature-dependent decay times reveal activation barriers between free and self-trapped exciton of 3 meV and 14 meV.
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We propose a two-dimensional phase-field-crystal model for the (2$times$1)-(1$times$1) phase transitions of Si(001) and Ge(001) surfaces. The dimerization in the 2$times$1 phase is described with a phase-field-crystal variable which is determined by solving an evolution equation derived from the free energy. Simulated periodic arrays of dimerization variable is consistent with scanning-tunnelling-microscopy images of the two dimerized surfaces. Calculated temperature dependence of the dimerization parameter indicates that normal dimers and broken ones coexist between the temperatures describing the charactristic temperature width of the phase-transition, $T_L$ and $T_H$, and a first-order phase transition takes place at a temperature between them. The dimerization over the whole temperature is determined. These results are in agreement with experiment. This phase-field-crystal approach is applicable to phase-transitions of other reconstructed surface phases, especially semiconductor $ntimes$1 reconstructed surface phases.
High-quality and impurity-free magnetite surfaces with (sqrt2xsqrt2)R45o reconstruction have been obtained for the Fe3O4(001) epitaxial films deposited on Fe(001). Based on atomically resolved STM images for both negative and positive sample polarity and Density Functional Theory calculations, a model of the magnetite (001) surface terminated with Fe ions forming dimers on the reconstructed (sqrt2xsqrt2)R45o octahedral iron layer is proposed.
The practical difficulties to use graphene in microelectronics and optoelectronics is that the available methods to grow graphene are not easily integrated in the mainstream technologies. A growth method that could overcome at least some of these problems is chemical vapour deposition (CVD) of graphene directly on semiconducting (Si or Ge) substrates. Here we report on the comparison of the CVD and molecular beam epitaxy (MBE) growth of graphene on the technologically relevant Ge(001)/Si(001) substrate from ethene (C$_2$H$_4$) precursor and describe the physical properties of the films as well as we discuss the surface reaction and diffusion processes that may be responsible for the observed behavior. Using nano angle resolved photoemission (nanoARPES) complemented by transport studies and Raman spectroscopy, we report the direct observation of massless Dirac particles in monolayer graphene, providing a comprehensive mapping of their low-hole doped Dirac electron bands. The micrometric graphene flakes are oriented along two predominant directions rotated by $30^circ$ with respect to each other. The growth mode is attributed to the mechanism when small graphene molecules nucleate on the Ge(001) surface and it is found that hydrogen plays a significant role in this process.
Coarse-grained modeling of dynamics on vicinal surfaces concentrates on the diffusion of adatoms on terraces with boundary conditions at sharp steps, as first studied by Burton, Cabrera and Frank (BCF). Recent electromigration experiments on vicinal Si surfaces suggest the need for more general boundary conditions in a BCF approach. We study a discrete 1D hopping model that takes into account asymmetry in the hopping rates in the region around a step and the finite probability of incorporation into the solid at the step site. By expanding the continuous concentration field in a Taylor series evaluated at discrete sites near the step, we relate the kinetic coefficients and permeability rate in general sharp step models to the physically suggestive parameters of the hopping models. In particular we find that both the kinetic coefficients and permeability rate can be negative when diffusion is faster near the step than on terraces. These ideas are used to provide an understanding of recent electromigration experiment on Si(001) surfaces where step bunching is induced by an electric field directed at various angles to the steps.
We use density-functional theory to study the structure of AlSb(001) and GaSb(001) surfaces. Based on a variety of reconstruction models, we construct surface stability diagrams for AlSb and GaSb under different growth conditions. For AlSb(001), the predictions are in excellent agreement with experimentally observed reconstructions. For GaSb(001), we show that previously proposed model accounts for the experimentally observed reconstructions under Ga-rich growth conditions, but fails to explain the experimental observations under Sb-rich conditions. We propose a new model that has a substantially lower surface energy than all (nx5)-like reconstructions proposed previously and that, in addition, leads to a simulated STM image in better agreement with experiment than existing models. However, this new model has higher surface energy than some of (4x3)-like reconstructions, models with periodicity that has not been observed. Hence we conclude that the experimentally observed (1x5) and (2x5) structures on GaSb(001) are kinetically limited rather than at the ground state.
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