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Register a new userEffects of substrate relaxation on adsorption in pores
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Hye-Young Kim
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Fluids in porous media are commonly studied with analytical or simulation methods, usually assuming that the host medium is rigid. By evaluating the substrates response (relaxation) to the presence of the fluid we assess the error inherent in that assumption. One application is a determination of the ground state of 3He in slit and cylindrical pores. With the relaxation, there results a much stronger cohesion than would be found for a rigid host. Similar increased binding effects of relaxation are found for classical fluids confined within slit pores or nanotube bundles.
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Density Functional Theory calculations are used to investigate the role of substrate-induced cooperative effects on the adsorption of water on a partially oxidized transition metal surface, O(2x2)/Ru(0001). Focussing particularly on the dimer configuration, we analyze the different contributions to its binding energy. A significant reinforcement of the intermolecular hydrogen-bond (H-bond), also supported by the observed frequency shifts of the vibration modes, is attributed to the polarization of the donor molecule when bonded to the Ru atoms in the substrate. This result is further confirmed by our calculations for a water dimer interacting with a small Ru cluster, which clearly show that the observed effect does not depend critically on fine structural details and/or the presence of co-adsorbates. Interestingly, the cooperative reinforcement of the H-bond is suppressed when the acceptor molecule, instead of the donor, is bonded to the surface. This simple observation can be used to rationalize the relative stability of different condensed structures of water on metallic substrates.
Experimental spin relaxation times in graphene, critical for spintronics and quantum information technologies, are two orders of magnitude below previous theoretical predictions for spin-phonon relaxation. Here, ab initio density-matrix dynamics simulations reveal that electric fields and substrates strongly reduce spin-phonon relaxation time to the nanosecond scale, in agreement with experiments. Our predicted out-of-plane to in-plane lifetime ratio exceeds 1/2 on boron nitride substrates, matching experiment unlike previous models, suggesting that spin-phonon relaxation is dominant in graphene at room temperature.
The adsorption of a near-critical fluid confined in a slit pore is investigated by means of density functional theory and by Monte Carlo simulation for a Lennard-Jones fluid. Our work was stimulated by recent experiments for SF_6 adsorbed in a mesoporous glass which showed the striking phenomenon of critical depletion, i.e. the adsorption excess Gamma first increases but then decreases very rapidly to negative values as the bulk critical temperature T_c is approached from above along near-critical isochores. By contrast, our density functional and simulation results, for a range of strongly attractive wall-fluid potentials, show Gamma monotonically increasing and eventually saturating as the temperature is lowered towards T_c along both the critical (rho=rho_c) and sub-critical isochores (rho<rho_c). Such behaviour results from the increasingly slow decay of the density profile away from the walls, into the middle of the slit, as T->T_c. For rho < rho_c we find that in the fluid the effective bulk field, which is negative and which favours desorption, is insufficient to dominate the effects of the surface fields which favour adsorption. We compare this situation with earlier results for the lattice gas model with a constant (negative) bulk field where critical depletion was found. Qualitatively different behaviour of the density profiles and adsorption is found in simulations for intermediate and weakly attractive wall-fluid potentials but in no case do we observe the critical depletion found in experiments. We conclude that the latter cannot be accounted for by a single pore model.
Two-dimensional (2D) materials are strongly affected by the dielectric environment including substrates, making it an important factor in designing materials for quantum and electronic technologies. Yet, first-principles evaluation of charged defect energetics in 2D materials typically do not include substrates due to the high computational cost. We present a general continuum model approach to incorporate substrate effects directly in density-functional theory calculations of charged defects in the 2D material alone. We show that this technique accurately predicts charge defect energies compared to much more expensive explicit substrate calculations, but with the computational expediency of calculating defects in free-standing 2D materials. Using this technique, we rapidly predict the substantial modification of charge transition levels of two defects in MoS$_2$ and ten defects promising for quantum technologies in hBN, due to SiO$_2$ and diamond substrates. This establishes a foundation for high-throughput computational screening of new quantum defects in 2D materials that critically accounts for substrate effects.
The electronic structure of the recently synthesised (3x3) reconstructed silicene on (4x4) Ag(111) is investigated by first-principles calculations. New states emerge due to the strong hybridization between silicene and Ag. Analyzing the nature and composition of these hybridized states, we show that i) it is possible to clearly distinguish them from states coming from the Dirac cone of free-standing silicene or from the sp-bands of bulk Ag and ii) assign their contribution to the description of the linearly dispersing band observed in photoemission. Furthermore, we show that silicene atoms contribute to the Fermi level, which leads to similar STM patterns as observed below or above the Fermi level. Our findings are crucial for the proper interpretation of experimental observations.
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