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Improvement of structural, electronic, and magnetic properties of Co$_2$MnSi thin films by He$^+$-irradiation

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 Added by Oksana Gaier
 Publication date 2008
  fields Physics
and research's language is English




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The influence of 30 keV He$^+$ ion irradiation on structural, electronic and magnetic properties of Co$_2$MnSi thin films with B2 order was investigated. It was found, that irradiation with light ions can improve the local chemical order. This provokes changes of the electronic structure and element-specific magnetization towards the bulk properties of the well-ordered Co$_2$MnSi Heusler compound with L2$_1$ structure.



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We investigated the structure-property relationship of Co$_2$MnSi Heusler thin films upon the irradiation with He$^+$ ions. The variation of the crystal structure with increasing ion fluence has been probed using nuclear magnetic resonance (NMR) and transmission electron microscopy (TEM), and associated with the corresponding changes of the magnetic behavior. A decrease of both the structural order and the moment in saturation is observed. Specifically, we detect a direct transition from a highly $L2_1$-ordered to a fully $A2$-disordered structure type and quantify the evolution of the $A2$ structural contribution as a function of ion fluence. Complementary TEM analysis reveals a spatially-resolved distribution of the $L2_1$ and $A2$ phases showing that the $A2$ disorder starts at the upper part of the films. The structural degradation in turn leads to a decreasing magnetic moment in saturation in response to the increasing fluence.
We studied the structural and magnetic properties of FeC~thin films deposited by co-sputtering of Fe and C targets in a direct current magnetron sputtering (dcMS) process at a substrate temperature (Ts) of 300, 523 and 773,K. The structure and morphology was measured using x-ray diffraction (XRD), x-ray absorption near edge spectroscopy (XANES) at Fe $L$ and C $K$-edges and atomic/magnetic force microscopy (AFM, MFM), respectively. An ultrathin (3,nm) $^{57}$FeC~layer, placed between relatively thick FeC~layers was used to estimate Fe self-diffusion taking place during growth at different Ts~using depth profiling measurements. Such $^{57}$FeC~layer was also used for $^{57}$Fe conversion electron M{o}ssbauer spectroscopy (CEMS) and nuclear resonance scattering (NRS) measurements, yielding the magnetic structure of this ultrathin layer. We found from XRD measurements that the structure formed at low Ts~(300,K) is analogous to Fe-based amorphous alloy and at high Ts~(773,K), pre-dominantly a tifc~phase has been formed. Interestingly, at an intermediate Ts~(523,K), a clear presence of tefc~(along with tifc~and Fe) can be seen from the NRS spectra. The microstructure obtained from AFM images was found to be in agreement with XRD results. MFM images also agrees well with NRS results as the presence of multi-magnetic components can be clearly seen in the sample grown at Ts~= 523,K. The information about the hybridization between Fe and C, obtained from Fe $L$ and C $K$-edges XANES also supports the results obtained from other measurements. In essence, from this work, experimental realization of tefc~has been demonstrated. It can be anticipated that by further fine-tuning the deposition conditions, even single phase tefc~phase can be realized which hitherto remains an experimental challenge.
The electronic and magnetic properties of transition metal dichalcogenides are known to be extremely sensitive to their structure. In this paper we study the effect of structure on the electronic and magnetic properties of mono- and bilayer $VSe_2$ films grown using molecular beam epitaxy. $VSe_2$ has recently attracted much attention due to reports of emergent ferromagnetism in the 2D limit. To understand this important compound, high quality 1T and distorted 1T films were grown at temperatures of 200 $^text{o}$C and 450 $^text{o}$C respectively and studied using 4K Scanning Tunneling Microscopy/Spectroscopy. The measured density of states and the charge density wave (CDW) patterns were compared to band structure and phonon dispersion calculations. Films in the 1T phase reveal different CDW patterns in the first layer compared to the second. Interestingly, we find the second layer of the 1T-film shows a CDW pattern with 4a $times$ 4a periodicity which is the 2D version of the bulk CDW observed in this compound. Our phonon dispersion calculations confirm the presence of a soft phonon at the correct wavevector that leads to this CDW. In contrast, the first layer of distorted 1T phase films shows a strong stripe feature with varying periodicities, while the second layer displays no observable CDW pattern. Finally, we find that the monolayer 1T $VSe_2$ film is weakly ferromagnetic, with ~ $3.5 {mu}_B$ per unit similar to previous reports.
We report the deposition of thin Co$_2$FeSi films by RF magnetron sputtering. Epitaxial (100)-oriented and L2$_1$ ordered growth is observed for films grown on MgO(100) substrates. (110)-oriented films on Al$_2$O$_3$(110) show several epitaxial domains in the film plane. Investigation of the magnetic properties reveals a saturation magnetization of 5.0 $mu_B/f.u.$ at low temperatures. The temperature dependence of the resistivity $rho_{xx}(T)$ exhibits a crossover from a T^3.5 law at T<50K to a T^1.65 behaviour at elevated temperatures. $rho_{xx}(H)$ shows a small anisotropic magnetoresistive effect. A weak dependence of the normal Hall effect on the external magnetic field indicates the compensation of electron and hole like contributions at the Fermi surface.
Cubic spinel CoCr2O4 has attained recent attention due to its multiferroic properties. However, the Co site substitution effect on the structural and magnetic properties has rarely been studied in thin film form. In this work, the structural and magnetic properties of Co1-xNixCr2O4 (x = 0, 0.5) epitaxial thin films deposited on MgAl2O4 (100) and MgO (100) substrates to manipulate the nature of strain in the films using pulsed laser deposition (PLD) technique are presented. The epitaxial nature of the films was confirmed through X-ray diffraction (XRD) and Rutherford backscattering spectrometry (RBS) measurements. Raman measurements revealed a disappearance of characteristic A1g and F2g modes of the CoCr2O4 with increase in the Ni content. Atomic force microscopy (AFM) studies show a modification of the surface morphology upon Ni substitution. Magnetic measurements disclose that the ferrimagnetic Curie temperature (Tc) of the CoCr2O4 in thin film grown on MgAl2O4 (100) and MgO (100) substrates were found to be 100.6 +/- 0.5 K and 93.8 +/- 0.2 K, respectively. With Ni substitution the transition temperatures significantly get enhanced from that of CoCr2O4. X-ray photoelectron spectroscopy (XPS) suggests Cr3+ oxidation states in the films, while Co ions are present in a mixed Co2+/Co3+ oxidation state. The substitution of Ni at Co site significantly modifies the line shape of the core level as well as the valence band. Ni ions are also found to be in a mixed 2+/3+ oxidation state. O 1s core level display asymmetry related to possible defects like oxygen vacancies in the films.
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