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Register a new userImprovement and protection of niobium surface superconductivity by Atomic Layer Deposition and heat treatment
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T. Proslier
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A method to treat the surface of Nb is described which potentially can improve the performance of superconducting RF cavities. We present tunneling and x-ray photoemission spectroscopy (XPS) measurements at the surface of cavity-grade niobium samples coated with a 3 nm alumina overlayer deposited by Atomic Layer Deposition (ALD). The coated samples baked in ultra high vacuum (UHV) at low temperature reveal at first degraded superconducting surface. However, at temperatures above 450C, the tunneling conductance curves show significant improvements of the superconducting density of states (DOS) compared with untreated surfaces.
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Atomic Layer Deposition (ALD) is a promising technique for producing Josephson junctions (JJs) with lower defect densities for qubit applications. A key problem with using ALD for JJs is the interfacial layer (IL) that develops underneath the tunnel barrier. An IL up to 2 nm forms between ALD Al2O3 and Al. However, the IL thickness is unknown for ALD films less 1 nm. In this work, Nb-Al-ALD-Al2O3-Nb trilayers with tunnel barriers from 0.6 - 1.6 nm were grown in situ. Nb-Al-AlOx-Nb JJs with thermally oxidized tunnel barrier were produced for reference. RN was obtained using a four-point method at 300 K. JC, and its dependence on barrier thickness, was calculated from the Ambegaokar-Baratoff formula. The Al surface was modeled using ab initio molecular dynamics to study the nucleation of Al2O3 on Al. Current voltage characteristics were taken at 4 K to corroborate the room temperature measurements. Together, these results suggest that ALD may be used to grow an ultrathin, uniform tunnel barrier with controllable tunnel resistance and JC, but a thin IL develops during the nucleation stage of ALD growth that may disqualify Al as a suitable wetting layer for ALD JJ based qubits.
A tunneling spectroscopy study is presented of superconducting MoN and Nb$_{0.8}$Ti$_{0.2}$N thin films grown by atomic layer deposition (ALD). The films exhibited a superconducting gap of 2meV and 2.4meV respectively with a corresponding critical temperature of 11.5K and 13.4K, among the highest reported $T_c$ values achieved by the ALD technique. Tunnel junctions were obtained using a mechanical contact method with a Au tip. While the native oxides of these films provided poor tunnel barriers, high quality tunnel junctions with low zero bias conductance (below $sim$10%) were obtained using an artificial tunnel barrier of Al$_2$O$_3$ on the films surface grown $textit{ex situ}$ by ALD. We find a large critical current density on the order of $4times 10^6$A/cm$^2$ at $T=0.8T_c$ for a 60nm MoN film and demonstrate conformal coating capabilities of ALD onto high aspect ratio geometries. These results suggest the ALD technique offers significant promise for thin film superconducting device applications.
In this paper, a method is presented to create and characterize mechanically robust, free standing, ultrathin, oxide films with controlled, nanometer-scale thickness using Atomic Layer Deposition (ALD) on graphene. Aluminum oxide films were deposited onto suspended graphene membranes using ALD. Subsequent etching of the graphene left pure aluminum oxide films only a few atoms in thickness. A pressurized blister test was used to determine that these ultrathin films have a Youngs modulus of 154 pm 13 GPa. This Youngs modulus is comparable to much thicker alumina ALD films. This behavior indicates that these ultrathin two-dimensional films have excellent mechanical integrity. The films are also impermeable to standard gases suggesting they are pinhole-free. These continuous ultrathin films are expected to enable new applications in fields such as thin film coatings, membranes and flexible electronics.
In the past decade, nanopores have been developed extensively for various potential applications, and their performance greatly depends on the surface properties of the nanopores. Atomic layer deposition (ALD) is a new technology for depositing thin films, which has been rapidly developed from a niche technology to an established method. ALD films can cover the surface in confined regions even in nano scale conformally, thus it is proved to be a powerful tool to modify the surface of the synthetic nanopores and also to fabricate complex nanopores. This review gives a brief introduction on nanopore synthesis and ALD fundamental knowledge, then focuses on the various aspects of synthetic nanopores processing by ALD and their applications, including single-molecule sensing, nanofluidic devices, nanostructure fabrication and other applications.
NbSe$_{2}$ and NbS$_{2}$ are isostructural two-dimensional materials that exhibit contrasting superconducting properties when reduced to the single monolayer limit. Monolayer NbSe$_{2}$ is an Ising superconductor, while there have been no reports of superconductivity in monolayer NbS$_{2}$. NbS$_{x}$Se$_{2-x}$ alloys exhibit an intriguing non-monotonic dependence of the superconducting transition temperature with sulfur content, which has been interpreted as a manifestation of fractal superconductivity. However, several key questions about this result are not known: (1) Does the electronic structure of the alloy differ from the parent compounds, (2) Are spin fluctuations which have been shown to be prominent in monolayer NbSe$_{2}$ also present in the alloys? Using first-principles calculations, we show that the density of states at the Fermi level and the proximity to magnetism in NbS$_{x}$Se$_{2-x}$ alloys are both reduced compared to the parent compound; the former would decrease the transition temperature while the latter would increase it. We also show that Se vacancies, which are likely magnetic pair-breaking defects, may form in large concentrations in NbSe$_{2}$. Based on our results, we suggest an alternative explanation of the non-monotonic behavior the superconducting transition temperature in NbS$_{x}$Se$_{2-x}$ alloys, which does not require the conjecture of multifractality.
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