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The filled skutterudite CeOs$_{4}$As$_{12}$: a hybridization gap semiconductor

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 Added by Ryan Baumbach
 Publication date 2008
  fields Physics
and research's language is English




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X-ray diffraction, electrical resistivity, magnetization, specific heat, and thermoelectric power measurements are presented for single crystals of the new filled skutterudite compound {CeOsAs}, which reveal phenomena that are associated with f - electron - conduction electron hybridization. Valence fluctuations or Kondo behavior dominates the physics down to $T$ $sim$ 135 K. The correlated electron behavior is manifested at low temperatures as a hybridization gap insulating state. The small energy gap $Delta$$_1$/k$_B$ $sim$ 73 K, taken from fits to electrical resistivity data, correlates with the evolution of a weakly magnetic or nonmagnetic ground state, which is evident in the magnetization data below a coherence temperature $T$$_{coh}$ $sim$ 45 K. Additionally, the low temperature electronic specific heat coefficient is small, $gamma$ $sim$ 19 mJ/mol K$^2$. Some results for the nonmagnetic analogue compound {LaOsAs} are also presented for comparison purposes.



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Anomalous metal-insulator transition observed in filled skutterudite CeOs$_4$Sb$_{12}$ is investigated by constructing the effective tight-binding model with the Coulomb repulsion between f electrons. By using the mean field approximation, magnetic susceptibilities are calculated and the phase diagram is obtained. When the band structure has a semimetallic character with small electron and hole pockets at $Gamma$ and H points, a spin density wave transition with the ordering vector $mathbf{Q}=(1,0,0)$ occurs due to the nesting property of the Fermi surfaces. Magnetic field enhances this phase in accord with the experiments.
Magnetization, specific heat, and electrical resistivity measurements were made on single crystals of the filled skutterudite compound PrOs$_{4}$As$_{12}$. Specific heat measurements indicate an electronic specific heat coefficient $gamma$ $sim 50-200$ mJ/mol K$^{2}$ at temperatures 10 K $leq T leq 18$ K, and $sim 1$ J/mol K$^{2}$ for $T leq 1.6$ K. Magnetization, specific heat, and electrical resistivity measurements reveal the presence of two, or possibly three, ordered phases at temperatures below $sim 2.3$ K and in fields below $sim 3$ T. The low temperature phase displays antiferromagnetic characteristics, while the nature of the ordering in the other phase(s) has yet to be determined.
MHz conductivity, torque magnetometer and magnetization measurements are reported on single crystals of CeOs$_4$Sb$_{12}$ and NdOs$_4$Sb$_{12}$ using temperatures down to 0.5~K and magnetic fields of up to 60~tesla. The field-orientation dependence of the de Haas-van Alphen and Shubnikov-de Haas oscillations is deduced by rotating the samples about the $[010]$ and $[0bar{1}1]$ directions. The results indicate that NdOs$_4$Sb$_{12}$ has a similar Fermi surface topology to that of the unusual superconductor PrOs$_4$Sb$_{12}$, but with significantly smaller effective masses, supporting the importance of local phonon modes in contributing to the low-temperature heat capacity of NdOs$_4$Sb$_{12}$. By contrast, CeOs$_4$Sb$_{12}$ undergoes a field-induced transition from an unusual semimetal into a high-field, high-temperature state characterized by a single, almost spherical Fermi-surface section. The behavior of the phase boundary and comparisons with models of the bandstructure lead us to propose that the field-induced phase transition in CeOs$_4$Sb$_{12}$ is similar in origin to the well-known $alpha-gamma$ transition in Ce and its alloys.
326 - T. Namiki , Y. Aoki , H. Sato 2007
We report on systematic study of superconducting characteristics and Pr crystalline-electric-field (CEF) levels of filled-skutterudite pra ($T_{rm c}$ = 2.33 K). The temperature dependences of the upper critical field $H_{rm c2}$ and the Ginzburg-Landau (Maki) parameter $kappa_2$ suggest an s-wave clean-limit superconductivity. The electronic specific heat coefficient $gamma sim 95$ mJ/K$^2$mol, being $sim 1.5$ times larger than that for lra, indicates $4f$-originating quasiparticle mass enhancement. Magnetic susceptibility $chi(T)$ indicates that the CEF ground state is a $Gamma_1$ singlet and a $Gamma_4^{(1)}$ triplet first excited state lies at $Delta_{rm CEF}sim 30$ K above. Systematic comparison among pos, prs, pra and La-based reference compounds suggests that inelastic exchange- and aspherical-charge-scatterings of conduction electrons from CEF-split $4f$ levels play an essential role for the quasiparticle mass enhancement and the value of $T_{rm c}$ in the Pr-based filled skutterudites.
Comprehensive magnetic-field-orientation dependent studies of the susceptibility and de Haas-van Alphen effect have been carried out on single crystals of the filled skutterudites PrOs$_4$As$_{12}$ and LaOs$_4$As$_{12}$ using magnetic fields of up to 40~T. Several peaks are observed in the low-field susceptibility of PrOs$_4$As$_{12}$, corresponding to cascades of metamagnetic transitions separating the low-field antiferromagnetic and high-field paramagnetic metal (PMM) phases. The de Haas-van Alphen experiments show that the Fermi-surface topologies of PrOs$_4$As$_{12}$ in its PMM phase and LaOs$_4$As$_{12}$ are very similar. In addition, they are in reasonable agreement with the predictions of bandstructure calculations for LaOs$_4$As$_{12}$ on the PrOs$_4$As$_{12}$ lattice. Both observations suggest that the Pr 4$f$ electrons contribute little to the number of itinerant quasiparticles in the PMM phase. However, whilst the properties of LaOs$_4$As$_{12}$ suggest a conventional nonmagnetic Fermi liquid, the effects of direct exchange and electron correlations are detected in the PMM phase of PrOs$_4$As$_{12}$. For example, the quasiparticle effective masses in PrOs$_4$As$_{12}$ are found to decrease with increasing field, probably reflecting the gradual suppression of magnetic fluctuations associated with proximity to the low-temperature, low-field antiferromagnetic state.
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