No Arabic abstract
We introduce the notion of superstructure Mottness to describe the Mott and Wigner-Mott transition in doped strongly correlated electron systems at commensurate filling fractions away from one electron per site. We show that superstructure Mottness emerges in an inhomogeneous electron system when the superstructure contains an odd number of electrons per supercell. We argue that superstructure Mottness exists even in the absence of translation symmetry breaking by a superlattice, provided that the extended or intersite Coulomb interaction is strong. In the latter case, superstructure Mottness offers a unifying framework for the Mott and Wigner physics and a nonperturbative, strong coupling description of the Wigner-Mott transition. We support our proposal by studying a minimal single-band ionic Hubbard $t$-$U$-$V$-$Delta$ model with nearest neighbor Coulomb repulsion $V$ and a two-sublattice ionic potential $Delta$. The model is mapped onto a Hubbard model with two effective ``orbitals representing the two sites within the supercell, the intra and interorbital Coulomb repulsion $U$ and $U^prime sim V$, and a crystal field splitting $Delta$. Charge order on the original lattice corresponds to orbital order. Developing a cluster Gutzwiller approximation, we study the effects and the interplay between $V$ and $Delta$ on the Mott and Wigner-Mott transitions at quarter-filling. We provide the mechanism by which the superlattice potential enhances the correlation effects and the tendency towards local moment formation, construct and elucidate the phase diagram in the unifying framework of superstructure Mottness.
The optical conductivity (OC) of cuprates is studied theoretically in the low density limit of the t-t-J-Holstein model. By developing a limited phonon basis exact diagonalization (LPBED) method capable of treating the lattice of largest size 4x4 ever considered, we are able to discern fine features of the mid-infrared (MIR) part of the OC revealing three-peak structure. The two lowest peaks are observed in experiments and the highest one is tacitly resolved in moderately doped cuprates. Comparison of OC with the results of semianalytic approaches and detailed analysis of the calculated isotope effect indicate that the middle-energy MIR peak is of mostly magnetic origin while the lowest MIR band originates from the scattering of holes by phonons.
The ultrafast response of the prototype Mott-Hubbard system (V1-xCrx)2O3 was systematically studied with fs pump-probe reflectivity, allowing us to clearly identify the effects of the metal-insulator transition on the transient response. The isostructural nature of the phase transition in this material made it possible to follow across the phase diagram the behaviour of the detected coherent acoustic wave, whose average value and lifetime depend on the thermodynamic phase and on the correlated electron density of states. It is also shown how coherent lattice oscillations can play an important role in some changes affecting the ultrafast electronic peak relaxation at the phase transition, changes which should not be mistakenly attributed to genuine electronic effects. These results clearly show that a thorough understanding of the ultrafast response of the material over several tenths of ps is necessary to correctly interpret its sub-ps excitation and relaxation regime, and appear to be of general interest also for other strongly correlated materials.
We studied the in-plane dynamic and static charge conductivity of electron doped Sr2IrO4 using optical spectroscopy and DC transport measurements. The optical conductivity indicates that the pristine material is an indirect semiconductor with a direct Mott-gap of 0.55 eV. Upon substitution of 2% La per formula unit the Mott-gap is suppressed except in a small fraction of the material (15%) where the gap survives, and overall the material remains insulating. Instead of a zero energy mode (or Drude peak) we observe a soft collective mode (SCM) with a broad maximum at 40 meV. Doping to 10% increases the strength of the SCM, and a zero-energy mode occurs together with metallic DC conductivity. Further increase of the La substitution doesnt change the spectral weight integral up to 3 eV. It does however result in a transfer of the SCM spectral weight to the zero-energy mode, with a corresponding reduction of the DC resistivity for all temperatures from 4 to 300 K. The presence of a zero-energy mode signals that at least part of the Fermi surface remains ungapped at low temperatures, whereas the SCM appears to be caused by pinning a collective frozen state involving part of the doped electrons.
Strong correlation effects, such as a dramatic increase in the effective mass of the carriers of electricity, recently observed in the low density electron gas have provided spectacular support for the existence of a sharp metal-insulator transitions in dilute two dimensional electron gases. Here we show that strong correlations, normally expected only for narrow integer filled bands, can be effectively enhanced even far away from integer filling, due to incipient charge ordering driven by non-local Coulomb interactions. This general mechanism is illustrated by solving an extended Hubbard model using dynamical mean-field theory. Our findings account for the key aspects of the experimental phase diagram, and reconcile the early view points of Wigner and Mott. The interplay of short range charge order and local correlations should result in a three peak structure in the spectral function of the electrons which should be observable in tunneling and optical spectroscopy.
Unravelling the nature of doping-induced transition between a Mott insulator and a weakly correlated metal is crucial to understanding novel emergent phases in strongly correlated materials. For this purpose, we study the evolution of spectral properties upon doping Mott insulating states, by utilizing the cluster perturbation theory on the Hubbard and t-J-like models. Specifically, a quasi-free dispersion crossing the Fermi level develops with small doping, and it eventually evolves into the most dominant feature at high doping levels. Although this dispersion is related to the free electron hopping, our study shows that this spectral feature is in fact influenced inherently by both electron-electron correlation and spin exchange interaction: the correlation destroys coherence, while the coupling between spin and mobile charge restores it in the photoemission spectrum. Due to the persistent impact of correlations and spin physics, the onset of gaps or the high-energy anomaly in the spectral functions can be expected in doped Mott insulators.