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Register a new userMagnetocapacitance in non-magnetic inhomogeneous media
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The dielectric response in a magnetic field is routinely used to probe the existence of coupled magnetic and elastic order in the multiferroics. However, here we demonstrate that magnetism is not necessary to produce a magnetocapacitance when the material is inhomogeneous. By considering a two-dimensional, two-component composite medium, we find a characteristic dielectric resonance that depends on magnetic field. We propose this as a possible signature of inhomogeneities and we argue that this behavior has already been observed in nanoporous silicon and some manganites.
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The current critical review aims to be more than a simple summary and reproduction of previously published work. Many comprehensive reviews and collections can be found in the literature. The main intention is to provide an account of the progress made in selected aspects of photoinduced phenomena in non-crystalline chalcogenides, presenting the current understanding of the mechanisms underlying such effects. An essential motive for the present review article has been to assess critically published experimental work in the field.
In a recent Letter, Berciu and Bhatt have presented a mean-field theory of ferromagnetism in III-V semiconductors doped with manganese, starting from an impurity band model. We show that this approach gives an unphysically broad impurity band and is thus not appropriate for (Ga,Mn)As containing 1-5% Mn. We also point out a microscopically unmotivated sign change in the overlap integrals in the Letter. Without this sign change, stable ferromagnetism is not obtained.
The silver chalcogenides provide a striking example of the benefits of imperfection. Nanothreads of excess silver cause distortions in the current flow that yield a linear and non-saturating transverse magnetoresistance (MR). Associated with the large and positive MR is a negative longitudinal MR. The longitudinal MR only occurs in the three-dimensional limit and thereby permits the determination of a characteristic length scale set by the spatial inhomogeneity. We find that this fundamental inhomogeneity length can be as large as ten microns. Systematic measurements of the diagonal and off-diagonal components of the resistivity tensor in various sample geometries show clear evidence of the distorted current paths posited in theoretical simulations. We use a random resistor network model to fit the linear MR, and expand it from two to three dimensions to depict current distortions in the third (thickness) dimension. When compared directly to experiments on Ag$_{2pmdelta}$Se and Ag$_{2pmdelta}$Te, in magnetic fields up to 55 T, the model identifies conductivity fluctuations due to macroscopic inhomogeneities as the underlying physical mechanism. It also accounts reasonably quantitatively for the various components of the resistivity tensor observed in the experiments.
56 -
Yu.G.Semenov (Groupe dEtude des Semi-Conducteurs
, Universiten Montpellier 2
, Montpellier Cedex
2001
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