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Doping Dependence of Superconductivity and Lattice Constants in Hole Doped $La_{1-x}Sr_xFeAsO$

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 Added by Hai-Hu Wen
 Publication date 2008
  fields Physics
and research's language is English




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By using solid state reaction method we have fabricated the hole doped $La_{1-x}Sr_xFeAsO$ superconductors with Sr content up to 0.13. It is found that the sharp anomaly at about 150 K and the low temperature upturn of resistivity are suppressed by doping holes into the parent phase. Interestingly both the superconducting transition temperature $T_c$ and the lattice constants (a-axis and c-axis) increase monotonously with hole concentration, in sharp contrast with the electron doped side where the $T_c$ increases with a continuing shrinkage of the lattice constants either by dope more fluorine or oxygen vacancies into the system. Our data clearly illustrate that the superconductivity can be induced by doping holes via substituting the trivalent La with divalent Sr in the LaFeAsO system with single FeAs layer, and the $T_c$ in the present system exhibits a symmetric behavior at the electron and hole doped sides, as we reported previously.



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Superconductivity was achieved in PrFeAsO by partially substituting Pr^{3+} with Sr^{2+}. The electrical transport properties and structure of this new superconductor Pr_{1-x}Sr_xFeAsO at different doping levels (x = 0.05$sim$ 0.25) were investigated systematically. It was found that the lattice constants (a-axis and c-axis) increase monotonously with Sr or hole concentration. The superconducting transition temperature at about 16.3 K (95% $rho_n$) was observed around the doping level of 0.20$sim$ 0.25. A detailed investigation was carried out in the sample with doping level of x = 0.25. The domination of hole-like charge carriers in this material was confirmed by Hall effect measurements. The magnetoresistance (MR) behavior can be well described by a simple two-band model. The upper critical field of the sample with T_c = 16.3 K (x = 0.25) was estimated to be beyond 45 Tesla. Our results suggest that the hole-doped samples may have higher upper critical fields comparing to the electron-doped ones, due to the higher quasi-particle density of states at the Fermi level.
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