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Register a new userSpectro-microscopy of single and multi-layer graphene supported by a weakly interacting substrate
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We report measurements of the electronic structure and surface morphology of exfoliated graphene on an insulating substrate using angle-resolved photoemission and low energy electron diffraction. Our results show that although exfoliated graphene is microscopically corrugated, the valence band retains a massless fermionic dispersion, with a Fermi velocity of ~10^6 m/s. We observe a close relationship between the morphology and electronic structure, which suggests that controlling the interaction between graphene and the supporting substrate is essential for graphene device applications.
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Charge-density-waves (CDW) which occur mainly in low-dimensional systems have a macroscopic wave function similar to superfluids and superconductors. Kosterlitz-Thouless (KT) transition is observed in superfluids and superconductors, but the presence of KT transition in ultra-thin CDW systems has been an open problem. We report the direct real-space observation of CDWs with new order states in mono-, bi-, and tri-layer 1T-TaS_2 crystal by using a low voltage scanning-transmission-electron-microscope (STEM) without a substrate. This method is ideal to observe local atomic structures and possible defects. We clearly observed that the mono-layer crystal has a new triclinic stripe CDW order without the triple q condition q_1 + q_2 + q_3 = 0. A strong electron-phonon interaction gives rise to new crevasse (line) type defects instead of disclination (point) type defects due to the KT transition. These results reaffirm the importance of the electron-phonon interaction in mono-layer nanophysics.
We have used scanning gate microscopy to explore the local conductivity of a current-annealed graphene flake. A map of the local neutrality point (NP) after annealing at low current density exhibits micron-sized inhomogeneities. Broadening of the local e-h transition is also correlated with the inhomogeneity of the NP. Annealing at higher current density reduces the NP inhomogeneity, but we still observe some asymmetry in the e-h conduction. We attribute this to a hole doped domain close to one of the metal contacts combined with underlying striations in the local NP.
We investigate the fine structure of graphene on iridium, which is a model for graphene weakly interacting with a transition metal substrate. Even the highest quality epitaxial graphene displays tiny imperfections, i.e. small biaxial strains, ca. 0.3%, rotations, ca. 0.5^{circ}, and shears over distances of ca. 100 nm, and is found incommensurate, as revealed by X-ray diffraction and scanning tunneling microscopy. These structural variations are mostly induced by the increase of the lattice parameter mismatch when cooling down the sample from the graphene preparation temperature to the measurement temperature. Although graphene weakly interacts with iridium, its thermal expansion is found positive, contrary to free-standing graphene. The structure of graphene and its variations are very sensitive to the preparation conditions. All these effects are consistent with initial growth and subsequent pining of graphene at steps.
For the first time, the magnetic force microscopy (MFM) is used to characterize the mechanically-exfoliated single- and few-layer MoS2 and graphene nanosheets. By analysis of the phase and amplitude shifts, the magnetic response of MoS2 and graphene nanosheets exhibits the dependence on their layer number. However, the solution-processed single-layer MoS2 nanosheet shows the reverse magnetic signal to the mechanically-exfoliated one, and the graphene oxide nanosheet has not shown any detectable magnetic signal. Importantly, graphene and MoS2 flakes become nonmagnetic when they exceed a certain thickness.
We demonstrate anisotropic etching of single-layer graphene by thermally-activated nickel nanoparticles. Using this technique, we obtain sub-10nm nanoribbons and other graphene nanostructures with edges aligned along a single crystallographic direction. We observe a new catalytic channeling behavior, whereby etched cuts do not intersect, resulting in continuously connected geometries. Raman spectroscopy and electronic measurements show that the quality of the graphene is resilient under the etching conditions, indicating that this method may serve as a powerful technique to produce graphene nanocircuits with well-defined crystallographic edges.
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