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Register a new userPauli spin blockade in carbon nanotube double quantum dots
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We report Pauli spin blockade in an impurity defined carbon nanotube double quantum dot. We observe a pronounced current suppression for negative source-drain bias voltages which is investigated for both symmetric and asymmetric coupling of the quantum dots to the leads. The measured differential conductance agrees well with a theoretical model of a double quantum dot system in the spin-blockade regime which allows us to estimate the occupation probabilities of the relevant singlet and triplet states. This work shows that effective spin-to-charge conversion in nanotube quantum dots is feasible and opens the possibility of single-spin readout in a material that is not limited by hyperfine interaction with nuclear spins.
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We investigate the influence of thermal energy on the current flow and electron spin states in double quantum dots in series. The quadruplet Pauli spin blockade, which is caused by the quadruplet and doublet states, occurs at low temperatures affecting the transport properties. As the temperature increases, the quadruplet Pauli spin blockade occurs as a result of the thermal energy, even in regions where it does not occur at low temperatures. This is because the triplet state is formed in one dot as a result of the gradual change of the Fermi distribution function of the electrodes with increasing temperature. Moreover, the thermally assisted Pauli spin blockade results in coexistence of the Coulomb and Pauli spin blockades. Conversely, for the standard triplet Pauli spin blockade, which occurs as a result of the triplet and singlet states, the current through the double dots monotonously smears out as the temperature increases. Therefore, the thermally assisted Pauli spin blockade is not clearly observed. However, the coexistence of the Coulomb and triplet Pauli spin blockades as a result of the thermal energy is clearly obtained in the calculation of the probability of the spin state in the double dots.
Understanding the influence of vibrational motion of the atoms on electronic transitions in molecules constitutes a cornerstone of quantum physics, as epitomized by the Franck-Condon principle of spectroscopy. Recent advances in building molecular-electronics devices and nanoelectromechanical systems open a new arena for studying the interaction between mechanical and electronic degrees of freedom in transport at the single-molecule level. The tunneling of electrons through molecules or suspended quantum dots has been shown to excite vibrational modes, or vibrons. Beyond this effect, theory predicts that strong electron-vibron coupling dramatically suppresses the current flow at low biases, a collective behaviour known as Franck-Condon blockade. Here we show measurements on quantum dots formed in suspended single-wall carbon nanotubes revealing a remarkably large electron-vibron coupling and, due to the high quality and unprecedented tunability of our samples, admit a quantitative analysis of vibron-mediated electronic transport in the regime of strong electron-vibron coupling. This allows us to unambiguously demonstrate the Franck-Condon blockade in a suspended nanostructure. The large observed electron-vibron coupling could ultimately be a key ingredient for the detection of quantized mechanical motion. It also emphasizes the unique potential for nanoelectromechanical device applications based on suspended graphene sheets and carbon nanotubes.
We demonstrate double quantum dots fabricated in undoped Si/SiGe heterostructures relying on a double top-gated design. Charge sensing shows that we can reliably deplete these devices to zero charge occupancy. Measurements and simulations confirm that the energetics are determined by the gate-induced electrostatic potentials. Pauli spin blockade has been observed via transport through the double dot in the two electron configuration, a critical step in performing coherent spin manipulations in Si.
We present measurements on gate-defined double quantum dots in Ge-Si core-shell nanowires, which we tune to a regime with visible shell filling in both dots. We observe a Pauli spin blockade and can assign the measured leakage current at low magnetic fields to spin-flip cotunneling, for which we measure a strong anisotropy related to an anisotropic g-factor. At higher magnetic fields we see signatures for leakage current caused by spin-orbit coupling between (1,1)-singlet and (2,0)-triplet states. Taking into account these anisotropic spin-flip mechanisms, we can choose the magnetic field direction with the longest spin lifetime for improved spin-orbit qubits.
Silicon quantum dots are attractive candidates for the development of scalable, spin-based qubits. Pauli spin blockade in double quantum dots provides an efficient, temperature independent mechanism for qubit readout. Here we report on transport experiments in double gate nanowire transistors issued from a CMOS process on 300 mm silicon-on-insulator wafers. At low temperature the devices behave as two few-electron quantum dots in series. We observe signatures of Pauli spin blockade with a singlet-triplet splitting ranging from 0.3 to 1.3 meV. Magneto-transport measurements show that transitions which conserve spin are shown to be magnetic-field independent up to B = 6 T.
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