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Register a new userMemory effects in transport through a hopping insulator: Understanding two-dip experiments
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We discuss memory effects in the conductance of hopping insulators due to slow rearrangements of many-electron clusters leading to formation of polarons close to the electron hopping sites. An abrupt change in the gate voltage and corresponding shift of the chemical potential change populations of the hopping sites, which then slowly relax due to rearrangements of the clusters. As a result, the density of hopping states becomes time dependent on a scale relevant to rearrangement of the structural defects leading to the excess time dependent conductivity.
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For hopping transport in disordered materials, the mobility of charge carriers is strongly dependent on temperature and the electric field. Our numerical study shows that both the energy distribution and the mobility of charge carriers in systems with a Gaussian density of states, such as organic disordered semiconductors, can be described by a single parameter - effective temperature, dependent on the magnitude of the electric field. Furthermore, this effective temperature does not depend on the concentration of charge carriers, while the mobility does depend on the charge carrier concentration. The concept of the effective temperature is shown to be valid for systems with and without space-energy correlations in the distribution of localized states.
The influence of Rashba spin-orbit interaction on the spin dynamics of a topologically disordered hopping system is studied in this paper. This is a significant generalization of a previous investigation, where an ordered (polaronic) hopping system has been considered instead. It is found, that in the limit, where the Rashba length is large compared to the typical hopping length, the spin dynamics of a disordered system can still be described by the expressions derived for an ordered system, under the provision that one takes into account the frequency dependence of the diffusion constant and the mobility (which are determined by charge transport and are independent of spin). With these results we are able to make explicit the influence of disorder on spin related quantities as, e.g., the spin life-time in hopping systems.
We investigate theoretically the slow non-exponential relaxation dynamics of the electron glass out of equilibrium, where a sudden change in carrier density reveals interesting memory effects. The self-consistent model of the dynamics of the occupation numbers in the system successfully recovers the general behavior found in experiments. Our numerical analysis is consistent with both the expected logarithmic relaxation and our understanding of how increasing disorder or interaction slows down the relaxation process, thus yielding a consistent picture of the electron glass. We also present a novel finite size domino effect where the connection to the leads affects the relaxation process of the electron glass in mesoscopic systems. This effect speeds up the relaxation process, and even reverses the expected effect of interaction; stronger interaction then leading to a faster relaxation.
A surprising similarity is found between the distribution of hydrodynamic stress on the wall of an irregular channel and the distribution of flux from a purely Laplacian field on the same geometry. This finding is a direct outcome from numerical simulations of the Navier-Stokes equations for flow at low Reynolds numbers in two-dimensional channels with rough walls presenting either deterministic or random self-similar geometries. For high Reynolds numbers, when inertial effects become relevant, the distribution of wall stresses on deterministic and random fractal rough channels becomes substantially dependent on the microscopic details of the walls geometry. In addition, we find that, while the permeability of the random channel follows the usual decrease with Reynolds, our results indicate an unexpected permeability increase for the deterministic case, i.e., ``the rougher the better. We show that this complex behavior is closely related with the presence and relative intensity of recirculation zones in the reentrant regions of the rough channel.
We apply the Kovacs experimental protocol to classical and quantum p-spin models. We show that these models have memory effects as those observed experimentally in super-cooled polymer melts. We discuss our results in connection to other classical models that capture memory effects. We propose that a similar protocol applied to quantum glassy systems might be useful to understand their dynamics.
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