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Register a new userTemperature and magnetic-field dependence of the quantum corrections to the conductance of a network of quantum dots
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Joern Kupferschmidt N
Publication date
2008
fields
Physics
and research's language is
English
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We calculate the magnetic-field and temperature dependence of all quantum corrections to the ensemble-averaged conductance of a network of quantum dots. We consider the limit that the dimensionless conductance of the network is large, so that the quantum corrections are small in comparison to the leading, classical contribution to the conductance. For a quantum dot network the conductance and its quantum corrections can be expressed solely in terms of the conductances and form factors of the contacts and the capacitances of the quantum dots. In particular, we calculate the temperature dependence of the weak localization correction and show that it is described by an effective dephasing rate proportional to temperature.
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Using different techniques, and Fermi-liquid relationships, we calculate the variation with applied magnetic field (up to second order) of the zero-temperature equilibrium conductance through a quantum dot described by the impurity Anderson model. We focus on the strong-coupling limit $U gg Delta$ where $U$ is the Coulomb repulsion and $Delta$ is half the resonant-level width, and consider several values of the dot level energy $E_d$, ranging from the Kondo regime $epsilon_F-E_d gg Delta$ to the intermediate-valence regime $epsilon_F-E_d sim Delta$, where $epsilon_F$ is the Fermi energy. We have mainly used density-matrix renormalization group (DMRG) and numerical renormalization group (NRG) combined with renormalized perturbation theory (RPT). Results for the dot occupancy and magnetic susceptibility from DMRG and NRG+RPT are compared with the corresponding Bethe ansatz results for $U rightarrow infty$, showing an excellent agreement once $E_d$ is renormalized by a constant Haldane shift. For $U < 3 Delta$ a simple perturbative approach in $U$ agrees very well with the other methods. The conductance decreases with applied magnetic field for dot occupancies $n_d sim 1$ and increases for $n_d sim 0.5$ or $n_d sim 1.5$ regardless of the value of $U$. We also relate the energy scale for the magnetic-field dependence of the conductance with the width of low energy peak in the spectral density of the dot.
Using renormalized perturbation theory in the Coulomb repulsion, we derive an analytical expression for the leading term in the temperature dependence of the conductance through a quantum dot described by the impurity Anderson model, in terms of the renormalized parameters of the model. Taking these parameters from the literature, we compare the results with published ones calculated using the numerical renormalization group obtaining a very good agreement. The approach is superior to alternative perturbative treatments. We compare in particular to the results of a simple interpolative perturbation approach.
We analyze the zero temperature conductance of a parallel T-shaped double quantum dot system. We present an analytical expression for the conductance of the system in terms of the total number of electrons in both quantum dots. Our results confirm that the systems conductance is strongly influenced by the dot which is not directly connected to the leads. We discuss our results in connection with similar results reported in the literature.
Quantum transport in magnetic topological insulators reveals the strong interplay between the magnetism and topology of electronic band structures. A recent experiment on magnetically doped topological insulator Bi2Se3 thin films showed the anomalous temperature dependence of the magnetoconductivity while their field dependence presents a clear signature of weak anti-localization [Tkac et al., Phys. Rev. Lett. 123, 036406(2019)]. Here we demonstrate that the tiny mass of the surface electrons induced by the bulk magnetization leads to a temperature-dependent correction to the pi Berry phase, and generates a decoherence mechanism to the phase coherence length of the surface electrons. As a consequence, the quantum correction to the conductivity can exhibit non-monotonic behavior by decreasing the temperature. This effect is attributed to the close relation of the Berry phase and quantum interference of the topological surface electrons in quantum topological materials.
Recent experiments have measured the signatures of the Kondo effect in the zero-field thermopower of strongly correlated quantum dots [Svilans {em et al.,} Phys. Rev. Lett. {bf 121}, 206801 (2018); Dutta {em et al.,} Nano Lett. {bf 19}, 506 (2019)]. They confirm the predicted Kondo-induced sign change in the thermopower, upon increasing the temperature through a gate-voltage dependent value $T_{1}gtrsim T_{rm K}$, where $T_{rm K}$ is the Kondo temperature. Here, we use the numerical renormalization group (NRG) method to investigate the effect of a finite magnetic field $B$ on the thermopower of such quantum dots. We show that, for fields $B$ exceeding a gate-voltage dependent value $B_{0}$, an additional sign change takes place in the Kondo regime at a temperature $T_{0}(Bgeq B_{0})>0$ with $T_0<T_1$. The field $B_{0}$ is comparable to, but larger than, the field $B_{c}$ at which the zero-temperature spectral function splits in a magnetic field. The validity of the NRG results for $B_{0}$ are checked by comparison with asymptotically exact higher-order Fermi-liquid calculations [Oguri {em et al.,} Phys. Rev. B {bf 97}, 035435 (2018)]. Our calculations clarify the field-dependent signatures of the Kondo effect in the thermopower of Kondo-correlated quantum dots and explain the recently measured trends in the $B$-field dependence of the thermoelectric response of such systems [Svilans {em et al.,} Phys. Rev. Lett. {bf 121}, 206801 (2018)].
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