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The potential of exchange spring bilayers and graded media is reviewed. An analytical model for the optimization of graded media gives an optimal value of the magnetic polarization of Js = 0.8 T. The optimum design allows for thermally stable grains with grain diameters in the order of 3.3 nm, which supports ultra high density up to 5 to 10 Tbit per inch2. The switching field distribution is significantly reduced in bilayer media and graded media compared to single phase media. For the graded media the switching field distribution is reduced by about a factor of two. For bilayer media the minimum switching field distribution is obtained for soft layer anisotropies about one fifth of the hard layer anisotropy. The influence of precessional switching on the reversal time and the reversal field is investigated in detail for magnetic bilayers. Exchange spring bilayers can be reversed with field pulses of 20 ps.
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Recently, magnetic tunnel junctions with perpendicular magnetized electrodes combined with exchange bias films have attracted large interest. In this paper we examine the tunnel magnetoresistance of Ta/Pd/IrMn/Co-Fe/Ta/Co-Fe-B/MgO/Co-Fe-B/capping/Pd magnetic tunnel junctions in dependence on the capping layer, i.e., Hf or Ta. In these stacks perpendicular exchange bias fields of -500,Oe along with perpendicular magnetic anisotropy are combined. A tunnel magnetoresistance of $(47.2pm 1.4)%$ for the Hf-capped sample was determined compared to the Ta one $(42.6pm 0.7)%$ at room temperature. Interestingly, this observation is correlated to the higher boron absorption of Hf compared to Ta which prevents the suppression of $Delta_{textrm{1}}$ channel and leads to higher tunnel magnetoresistance values. Furthermore, the temperature dependent coercivities of the soft electrodes of both samples are mainly described by the Stoner-Wohlfarth model including thermal fluctuations. Slight deviations at low temperatures can be attributed to a torque on the soft electrode that is generated by the pinned magnetic layer system.
We observe magnetic domain structures of MgO/CoFeB with a perpendicular magnetic easy axis under an electric field. The domain structure shows a maze pattern with electric-field dependent isotropic period. We find that the electric-field modulation of the period is explained by considering the electric-field modulation of the exchange stiffness constant in addition to the known magnetic anisotropy modulation.
Multiferroic BaMnF$_4$ powder were prepared by hydrothermal method. Hysteretic field dependent magnetization curve at 5 K confirms the weak ferromagnetism aroused from the canted antiferromagnetic spins by magnetoelectric coupling. The blocking temperature of 65 K for exchange bias coincides well with the peak at 65 K in the zero-field cooled temperature-dependent magnetization curve, which has been assigned to the onset temperature of two-dimensional antiferromagnetism. An upturn kink of exchange field and coercivity with decreasing temperature was observed from 40 K to 20 K, which is consistent with the two-dimensional to three-dimensional antiferromagnetic transition at Neel temperature (~26 K). In contrast to the conventional mechanism of magnetization pinned by interfacial exchange coupling in multiphases, the exchange bias in BaMnF$_4$ is argued to be a bulk effect in single phase, due to the magnetization pinned by the polarization through magnetoelectric coupling.
Spin waves in ferrimagnetic yttrium iron garnet (YIG) films with ultralow magnetic damping are relevant for magnon-based spintronics and low-power wave-like computing. The excitation frequency of spin waves in YIG is rather low in weak external magnetic fields because of its small saturation magnetization, which limits the potential of YIG films for high-frequency applications. Here, we demonstrate how exchange-coupling to a CoFeB film enables efficient excitation of high-frequency perpendicular standing spin waves (PSSWs) in nanometer-thick (80 nm and 295 nm) YIG films using uniform microwave magnetic fields. In the 295-nm-thick YIG film, we measure intense PSSW modes up to 10th order. Strong hybridization between the PSSW modes and the ferromagnetic resonance mode of CoFeB leads to characteristic anti-crossing behavior in broadband spin-wave spectra. A dynamic exchange torque at the YIG/CoFeB interface explains the excitation of PSSWs. The localized torque originates from exchange coupling between two dissimilar magnetization precessions in the YIG and CoFeB layers. As a consequence, spin waves are emitted from the YIG/CoFeB interface and PSSWs form when their wave vector matches the perpendicular confinement condition. PSSWs are not excited when the exchange coupling between YIG and CoFeB is suppressed by a Ta spacer layer. Micromagnetic simulations confirm the exchange-torque mechanism.
We investigate the dependence of magnetic properties on the post-annealing temperature/time, the thickness of soft ferromagnetic electrode and Ta dusting layer in the pinned electrode as well as their correlation with the tunnel magnetoresistance ratio, in a series of perpendicular magnetic tunnel junctions of materials sequence Ta/Pd/IrMn/CoFe/Ta$(textit{x})$/CoFeB/MgO$(textit{y})$/CoFeB$(textit{z})$/Ta/Pd. We obtain a large perpendicular exchange bias of 79.6$,$kA/m for $x=0.3,$nm. For stacks with $z=1.05,$nm, the magnetic properties of the soft electrode resemble the characteristics of superparamagnetism. For stacks with $x=0.4,$nm, $y=2,$nm, and $z=1.20,$nm, the exchange bias presents a significant decrease at post annealing temperature $T_textrm{ann}=330,^{circ}$C for 60 min, while the interlayer exchange coupling and the saturation magnetization per unit area sharply decay at $T_textrm{ann}=340,^{circ}$C for 60 min. Simultaneously, the tunnel magnetoresistance ratio shows a peak of $65.5%$ after being annealed at $T_textrm{ann}=300,^{circ}$C for 60 min, with a significant reduction down to $10%$ for higher annealing temperatures ($T_textrm{ann}geq330,^{circ}$C) and down to $14%$ for longer annealing times ($T_textrm{ann}=300,^{circ}$C for 90 min). We attribute the large decrease of tunnel magnetoresistance ratio to the loss of exchange bias in the pinned electrode.
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