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Register a new userOrganized Current Patterns in Disordered Conductors
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We present a general theory of current deviations in straight current carrying wires with random imperfections, which quantitatively explains the recent observations of organized patterns of magnetic field corrugations above micron-scale evaporated wires. These patterns originate from the most efficient electron scattering by Fourier components of the wire imperfections with wavefronts along the $pm 45^{circ}$ direction. We show that long range effects of surface or bulk corrugations are suppressed for narrow wires or wires having an electrically anisotropic resistivity.
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We analyze atom-surface magnetic interactions on atom chips where the magnetic trapping potentials are produced by current carrying wires made of electrically anisotropic materials. We discuss a theory for time dependent fluctuations of the magnetic potential, arising from thermal noise originating from the surface. It is shown that using materials with a large electrical anisotropy results in a considerable reduction of heating and decoherence rates of ultra-cold atoms trapped near the surface, of up to several orders of magnitude. The trap loss rate due to spin flips is expected to be significantly reduced upon cooling the surface to low temperatures. In addition, the electrical anisotropy significantly suppresses the amplitude of static spatial potential corrugations due to current scattering within imperfect wires. Also the shape of the corrugation pattern depends on the electrical anisotropy: the preferred angle of the scattered current wave fronts can be varied over a wide range. Materials, fabrication, and experimental issues are discussed, and specific candidate materials are suggested.
Our experiments show that for two or more pieces of a wire, of different lengths in general, combined in parallel and connected to a dc source, the current ratio evolves towards unity as the combination is cooled to the superconducting transition temperature Tc, and remains pinned at that value below it. This re-distribution of the total current towards equipartition without external fine tuning is a surprise. It can be physically understood in terms of a mechanism that involves the flux-flow resistance associated with the transport current in a wire of type-II superconducting material. It is the fact that the flux-flow resistance increases with current that drives the current division towards equipartition.
The effects of an external electric field on the formation of Liesegang patterns are investigated. The patterns are assumed to emerge from a phase separation process in the wake of a diffusive reaction front. The dynamics is described by a Cahn-Hilliard equation with a moving source term representing the reaction zone, and the electric field enters through its effects on the properties of the reaction zone. We employ our previous results [I. Bena, F. Coppex, M. Droz, and Z. Racz, J. Chem. Phys. {bf 122}, 024512 (2005)] on how the electric field changes both the motion of the front, as well as the amount of reaction product left behind the front, and our main conclusion is that the number of precipitation bands becomes finite in a finite electric field. The reason for the finiteness in case when the electric field drives the reagents towards the reaction zone is that the width of consecutive bands increases so that, beyond a distance $ell_+$, the precipitation is continuous (plug is formed). In case of an electric field of opposite polarity, the bands emerge in a finite interval $ell_-$, since the reaction product decreases with time and the conditions for phase separation cease to exist. We give estimates of $ell_{pm}$ in terms of measurable quantities and thus present an experimentally verifiable prediction of the Cahn-Hilliard equation with a moving source description of Liesegang phenomena.
We report on progress in ion placement into silicon devices with scanning probe alignment. The device is imaged with a scanning force microscope (SFM) and an aligned argon beam (20 keV, 36 keV) is scanned over the transistor surface. Holes in the lever of the SFM tip collimate the argon beam to sizes of 1.6 um and 100 nm in diameter. Ion impacts upset the channel current due to formation of positive charges in the oxide areas. The induced changes in the source-drain current are recorded in dependence of the ion beam position in respect to the FinFET. Maps of local areas responding to the ion beam are obtained.
We show that transport and thermodynamic properties of emph{singly-connected} disordered conductors exhibit quantum Aharonov - Bohm oscillations with the total magnetic flux through the system. The oscillations are associated with the interference contribution from a special class of electron trajectories confined to the surface of the sample.
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