No Arabic abstract
The voltage-controlled Berry phases in two vertically coupled InGaAs/GaAs quantum dots are investigated theoretically. It is found that Berry phases can be changed dramatically from 0 to 2$pi$ (or 2$pi$ to 0) only simply by turning the external voltage. Under realistic conditions, as the tunneling is varied from $0.8eV$ to $0.9eV$ via a bias voltage, the Berry phases are altered obviously, which can be detected in an interference experiment. The scheme is expected to be useful in constructing quantum computation based on geometric phases in an asymmetrical double quantum dot controlled by voltage.
We demonstrate that voltage-controlled negative index can be obtained in self-organized InAs quantum dot systems. As the bias voltage changes, the refractive index can be adjusted and controlled continuously from -7 to 7. Simultaneously, the absorption of light in the system will be very small. The single-negative index materials and the double-negative index materials can be achieved in different bias voltages.
We report on the study of the non-trivial Berry phase in superconducting multiterminal quantum dots biased at commensurate voltages. Starting with the time-periodic Bogoliubov-de Gennes equations, we obtain a tight binding model in the Floquet space, and we solve these equations in the semiclassical limit. We observe that the parameter space defined by the contact transparencies and quartet phase splits into two components with a non-trivial Berry phase. We use the Bohr-Sommerfeld quantization to calculate the Berry phase. We find that if the quantum dot level sits at zero energy, then the Berry phase takes the values $varphi_B=0$ or $varphi_B=pi$. We demonstrate that this non-trivial Berry phase can be observed by tunneling spectroscopy in the Floquet spectra. Consequently, the Floquet-Wannier-Stark ladder spectra of superconducting multiterminal quantum dots are shifted by half-a-period if $varphi_B=pi$. Our numerical calculations based on Keldysh Greens functions show that this Berry phase spectral shift can be observed from the quantum dot tunneling density of states.
Using double quantum dots as the weak link of a Josephson junction, we realize the superconducting analog of the celebrated two-impurity Kondo model. The device shows a cusped current-voltage characteristic, which can be modelled by an overdamped circuit relating the observed cusp current to the Josephson critical current. The gate dependence of the cusp current and of the subgap spectra are used as complementary ground-state indicators to demonstrate gate-tuned changes of the ground state from an inter-dot singlet to independently screened Yu-Shiba-Rusinov (YSR) singlets. In contrast to the two-impurity Kondo effect in normal-state systems, the crossover between these two singlets is heralded by quantum phase boundaries to nearby doublet YSR phases in which only a single spin is screened.
Quantum confinenement and manipulation of charge carriers are critical for achieving devices practical for quantum technologies. The interplay between electron spin and valley, as well as the possibility to address their quantum states electrically and optically, make two-dimensional (2D) transition metal dichalcogenides an emerging platform for the development of quantum devices. In this work, we fabricate devices based on heterostructures of layered 2D materials, in which we realize gate-controlled tungsten diselenide (WSe2) hole quantum dots. We discuss the observed mesoscopic transport features related to the emergence of quantum dots in the WSe2 device channel, and we compare them to a theoretical model.
We demonstrate non-perturbative coupling between a single self-assembled InGaAs quantum dot and an external fiber-mirror based microcavity. Our results extend the previous realizations of tunable microcavities while ensuring spatial and spectral overlap between the cavity-mode and the emitter by simultaneously allowing for deterministic charge control of the quantum dots. Using resonant spectroscopy, we show that the coupled quantum dot cavity system is at the onset of strong coupling, with a cooperativity parameter of 2. Our results constitute a milestone towards the realization of a high efficiency solid-state spin-photon interface.