No Arabic abstract
We observed the recently predicted quantum suppression of dynamical Coulomb blockade on short coherent conductors by measuring the conductance of a quantum point contact embedded in a tunable on-chip circuit. Taking advantage of the circuit modularity we measured most parameters used by the theory. This allowed us to perform a reliable and quantitative experimental test of the theory. Dynamical Coulomb blockade corrections, probed up to the second conductance plateau of the quantum point contact, are found to be accurately normalized by the same Fano factor as quantum shot noise, in excellent agreement with the theoretical predictions.
We observe the suppression of the finite frequency shot-noise produced by a voltage biased tunnel junction due to its interaction with a single electromagnetic mode of high impedance. The tunnel junction is embedded in a quarter wavelength resonator containing a dense SQUID array providing it with a characteristic impedance in the kOhms range and a resonant frequency tunable in the 4-6 GHz range. Such high impedance gives rise to a sizeable Coulomb blockade on the tunnel junction (roughly 30% reduction in the differential conductance) and allows an efficient measurement of the spectral density of the current fluctuations at the resonator frequency. The observed blockade of shot-noise is found in agreement with an extension of the dynamical Coulomb blockade theory.
We present an experimental realization of a Coulomb blockade refrigerator (CBR) based on a single - electron transistor (SET). In the present structure, the SET island is interrupted by a superconducting inclusion to permit charge transport while preventing heat flow. At certain values of the bias and gate voltages, the current through the SET cools one of the junctions. The measurements follow theoretical model down to about 80 mK, which was the base temperature of the current measurements. The observed cooling increases rapidly with decreasing temperature in agreement with the theory, reaching about 15 mK drop at the base temperature. CBR appears as a promising electronic cooler at temperatures well below 100 mK.
We observe and comprehend the dynamical Coulomb blockade suppression of the electrical conductance across an electronic quantum channel submitted to a temperature difference. A broadly tunable, spin-polarized Ga(Al)As quantum channel is connected on-chip, through a micron-scale metallic node, to a linear $RC$ circuit. The latter is made up of the nodes geometrical capacitance $C$ in parallel with an adjustable resistance $Rin {1/2,1/3,1/4}times h/e^2$ formed by 2--4 quantum Hall channels. The system is characterized by three temperatures: a temperature of the electrons in the large electrodes ($T$) and in the node ($T_mathrm{node}$), and a temperature of the electromagnetic modes of the $RC$ circuit ($T_mathrm{env}$). The temperature in the node is selectively increased by local Joule dissipation, and characterized from current fluctuations. For a quantum channel in the tunnel regime, a close match is found between conductance measurements and tunnel dynamical Coulomb blockade theory. In the opposite near ballistic regime, we develop a theory that accounts for different electronic and electromagnetic bath temperatures, again in very good agreement with experimental data. Beyond these regimes, for an arbitrary quantum channel set in the far out-of-equilibrium situation where the temperature in the node significantly exceeds the one in the large electrodes, the equilibrium (uniform temperature) prediction for the conductance is recovered, albeit at a rescaled temperature $alpha T_mathrm{node}$.
Quantum fluctuations are imprinted with valuable information about transport processes. Experimental access to this information is possible, but challenging. We introduce the dynamical Coulomb blockade (DCB) as a local probe for fluctuations in a scanning tunneling microscope (STM) and show that it provides information about the conduction channels. In agreement with theoretical predictions, we find that the DCB disappears in a single-channel junction with increasing transmission following the Fano factor, analogous to what happens with shot noise. Furthermore we demonstrate local differences in the DCB expected from changes in the conduction channel configuration. Our experimental results are complemented by ab initio transport calculations that elucidate the microscopic nature of the conduction channels in our atomic-scale contacts. We conclude that probing the DCB by STM provides a technique complementary to shot noise measurements for locally resolving quantum transport characteristics.
Electrical contacts between nano-engineered systems are expected to constitute the basic building blocks of future nano-scale electronics. However, the accurate characterization and understanding of electrical contacts at the nano-scale is an experimentally challenging task. Here we employ low-temperature scanning tunneling spectroscopy to investigate the conductance of individual nano-contacts formed between flat Pb islands and their supporting substrates. We observe a suppression of the differential tunnel conductance at small bias voltages due to dynamical Coulomb blockade effects. The differential conductance spectra allow us to determine the capacitances and resistances of the electrical contacts which depend systematically on the island--substrate contact area. Calculations based on the theory of environmentally assisted tunneling agree well with the measurements.