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Register a new userAcoustic phonon scattering limited carrier mobility in 2D extrinsic graphene
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We theoretically calculate the phonon scattering limited electron mobility in extrinsic (i.e. gated or doped with a tunable and finite carrier density) 2D graphene layers as a function of temperature $(T)$ and carrier density $(n)$. We find a temperature dependent phonon-limited resistivity $rho_{ph}(T)$ to be linear in temperature for $Tagt 50 K$ with the room temperature intrinsic mobility reaching values above $10^5$ cm$^2/Vs$. We comment on the low-temperature Bloch-Gr{u}neisen behavior where $rho_{ph}(T) sim T^4$ for unscreened electron-phonon coupling.
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Under which conditions do the electrical transport properties of one-dimensional (1D) carbon nanotubes (CNTs) and 2D graphene become equivalent? We have performed atomistic calculations of the phonon-limited electrical mobility in graphene and in a wide range of CNTs of different types to address this issue. The theoretical study is based on a tight-binding method and a force-constant model from which all possible electron-phonon couplings are computed. The electrical resistivity of graphene is found in very good agreement with experiments performed at high carrier density. A common methodology is applied to study the transition from 1D to 2D by considering CNTs with diameter up to 16 nm. It is found that the mobility in CNTs of increasing diameter converges to the same value, the mobility in graphene. This convergence is much faster at high temperature and high carrier density. For small-diameter CNTs, the mobility strongly depends on chirality, diameter, and existence of a bandgap.
We calculate an electron-phonon scattering and intrinsic transport properties of black phosphorus monolayer using tight-binding and Boltzmann treatments as a function of temperature, carrier density, and electric field. The low-field mobility shows weak dependence on density and, at room temperature, falls in the range of 300 - 1000 cm^2/Vs in the armchair direction and 50 - 120 cm^2/Vs in the zig-zag direction with the anisotropy due to an effective mass difference. At high fields, drift velocity is linear with electric field up to 1 - 2 V/micron reaching values of 10^7 cm/s in the armchair direction, unless self-heating effects are included.
An acoustic plasmon is predicted to occur, in addition to the conventional two-dimensional (2D) plasmon, as the collective motion of a system of two types of electronic carriers coexisting in the very same 2D band of extrinsic (doped or gated) graphene. The origin of this novel mode resides in the strong anisotropy that is present in the graphene band structure near the Dirac point. This anisotropy allows for the coexistence of carriers moving with two distinct Fermi velocities along the Gamma-K direction, which leads to two modes of collective oscillation: one mode in which the two types of electrons oscillate in phase with one another [this is the conventional 2D graphene plasmon, which at long wavelengths (q->0) has the same dispersion, q^1/2, as the conventional 2D plasmon of a 2D free electron gas], and the other mode found here corresponding to a low-frequency acoustic oscillation [whose energy exhibits at long wavelengths a linear dependence on the 2D wavenumber q] in which the two types of electrons oscillate out of phase. If this prediction is confirmed experimentally, it will represent the first realization of acoustic plasmons originated in the collective motion of a system of two types of carriers coexisting within the very same band.
We theoretically examine the effect of carrier-carrier scattering processes (electron-hole and electron-electron) on the intraband radiation absorption and their contribution to the net dynamic conductivity in optically or electrically pumped graphene. We demonstrate that the radiation absorption assisted by the carrier-carrier scattering can be stronger than the Drude absorption due to the carrier scattering on disorder. Since the intraband absorption of radiation effectively competes with its interband amplification, this can substantially affect the conditions of the negative dynamic conductivity in the pumped graphene and, hence, the interband terahertz and infrared lasing. We find the threshold values of the frequency and quasi-Fermi energy of nonequilibrium carriers corresponding to the onset of negative dynamic conductivity. The obtained results show that the effect of carrier-carrier scattering shifts the threshold frequency of the radiation amplification in pumped graphene to higher values. In particular, the negative dynamic conductivity is attainable at the frequencies above 6 THz in graphene on SiO2 substrates at room temperature. The threshold frequency can be decreased to markedly lower values in graphene structures with high-k substrates due to screening of the carrier-carrier scattering, particularly at lower temperatures.
Graphene is emerging as a viable alternative to conventional optoelectronic, plasmonic, and nanophotonic materials. The interaction of light with carriers creates an out-of-equilibrium distribution, which relaxes on an ultrafast timescale to a hot Fermi-Dirac distribution, that subsequently cools via phonon emission. Here we combine pump-probe spectroscopy, featuring extreme temporal resolution and broad spectral coverage, with a microscopic theory based on the quantum Boltzmann equation, to investigate electron-electron collisions in graphene during the very early stages of relaxation. We identify the fundamental physical mechanisms controlling the ultrafast dynamics in graphene, in particular the significant role of ultrafast collinear scattering, enabling Auger processes, including charge multiplication, key to improving photovoltage generation and photodetectors.
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