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Register a new userAutoresonant control of the many-electron dynamics in nonparabolic quantum wells
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The optical response of nonparabolic quantum wells is dominated by a strong peak at the plasmon frequency. When the electrons reach the anharmonic regions, resonant absorption becomes inefficient. This limitation is overcome by using a chirped laser pulse in the autoresonant regime. By direct simulations using the Wigner phase-space approach, the authors prove that, with a sequence of just a few pulses, electrons can be efficiently detrapped from a nonparabolic well. For an array of multiple quantum wells, they can create and control an electronic current by suitably applying an autoresonant laser pulse and a slowly varying dc electric field.
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We demonstrate the existence of a novel breather mode in the self-consistent electron dynamics of a semiconductor quantum well. A non-perturbative variational method based on quantum hydrodynamics is used to determine the salient features of the electron breather mode. Numerical simulations of the time-dependent Wigner-Poisson or Hartree equations are shown to be in excellent agreement with our analytical results. For asymmetric quantum wells, a signature of the breather mode is observed in the dipole response, which can be detected by standard optical means.
The electron spin dynamics is studied by time-resolved Kerr rotation in GaAs/AlGaAs quantum wells embedded in a negatively doped-intrinsic-positively doped structures grown on (111)A or (111)B-oriented substrates. In both cases the spin lifetimes are significantly increased by applying an external electric field but this field has to point along the growth direction for structures grown on (111)A and opposite to it for the ones grown on (111)B. This extended electron spin lifetime is the result of the suppression of the Dyakonov-Perel spin relaxation mechanism [Sov. Phys. Solid State 13, 3023 (1972)] due to the cancellation effect of the internal Dresselhaus term [Phys. Rev. 100, 580 (1955)] with the external electric field induced Rashba one [J. Phys. C 17, 6039 (1984)], both governing the conduction band spin-orbit splitting. These results demonstrate the key role played by the growth direction in the design of spintronic devices.
We study the electron spin relaxation in both symmetric and asymmetric GaAs/AlGaAs quantum wells (QWs) grown on (110) substrates in an external magnetic field B applied along the QW normal. The spin polarization is induced by circularly polarized light and detected by time-resolved Kerr rotation technique. In the asymmetric structure, where a {delta}-doped layer on one side of the QW produces the Rashba contribution to the conduction-band spin-orbit splitting, the lifetime of electron spins aligned along the growth axis exhibits an anomalous dependence on B in the range 0<B<0.5 T; this results from the interplay between the Dresselhaus and Rashba effective fields which are perpendicular to each other. For larger magnetic fields, the spin lifetime increases, which is the consequence of the cyclotron motion of the electrons and is also observed in (001)-grown quantum wells. The experimental results are in agreement with the calculation of the spin lifetimes in (110)- grown asymmetric quantum wells described by the point group Cs where the growth direction is not the principal axis of the spin-relaxation-rate tensor.
We present theory and calculations for coherent high-fidelity quantum control of many-particle states in semiconductor quantum wells. We show that coupling a two-electron double quantum dot to a terahertz optical source enables targeted excitations that are one to two orders of magnitude faster and significantly more accurate than those obtained with electric gates. The optical fields subject to physical constraints are obtained through quantum optimal control theory that we apply in conjunction with the numerically exact solution of the time-dependent Schrodinger equation. Our ability to coherently control arbitrary two-electron states, and to maximize the entanglement, opens up further perspectives in solid-state quantum information.
Dynamics of nonradiative excitons with large in-plane wave vectors forming a so-called reservoir is experimentally studied in a high-quality semiconductor structure containing a 14-nm shallow GaAs/Al$_{0.03}$Ga$_{0.97}$As quantum well by means of the non-degenerate pump-probe spectroscopy. The exciton dynamics is visualized via the dynamic broadening of the heavy-hole and light-hole exciton resonances caused by the exciton-exciton scattering. Under the non-resonant excitation free carriers are optically generated. In this regime the exciton dynamics is strongly affected by the exciton-carrier scattering. In particular, if the carriers of one sign are prevailing, they efficiently deplete the reservoir of the nonradiative excitons inducing their scattering into the light cone. A simple model of the exciton dynamics is developed, which considers the energy relaxation of photocreated electrons and holes, their coupling into excitons, and exciton scattering into the light cone. The model well reproduces the exciton dynamics observed experimentally both at the resonant and nonresonant excitation. Moreover, it correctly describes the profiles of the photoluminescence pulses studied experimentally. The efficient exciton-electron interaction is further experimentally verified by the control of the exciton density in the reservoir when an additional excitation creates electrons depleting the reservoir.
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