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Register a new userReentrant temperature dependence of critical current in superconductor - ferromagnet - superconductor junctions based on PdFe alloys
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Added by
Vitaly Bol'ginov V.
Publication date
2007
fields
Physics
and research's language is
English
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The magnetic and transport properties of $Pd_{0.99}Fe_{0.01}$ thin films have been studied. We have found that the Curie temperature of the films is about 20 K and the magnetic properties strongly depend on temperature below $T_{Curie}$. We have also fabricated the set of superconductor-ferromagnet-superconductor josephson junctions $Nb-PdFe-Nb$. The temperature dependence of the junctions with the ferromagnet layer thickness of about 36 nm shows the reentrant behaviour that is the evidence of the transition of the junction into the $pi$-state.
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We report the first experimental observation of the two-node thickness dependence of the critical current in Josephson junctions with a ferromagnetic interlayer. Vanishings of the critical current correspond to transitions into pi-state and back into conventional 0-state. The experimental data allow to extract the superconducting order parameter oscillation period and the pair decay length in the ferromagnet. We develope a theoretical approach based on Usadel equations, which takes into account the spin-flip scattering. Results of numerical calculations are in good agreement with the experimental data.
In this work, we show fundamental low temperature (T) magnetic and Ic responses of a magnetic Josephson Junction (MJJ) S/F/S heterostructure - Nb/ Co56Fe24B20 /Nb. The ultra-thin Co56Fe24B20 (CFB) films (0.6-1.3 nm) were deposited onto two separate buffer layers: 150 nm Nb/5 nm Cu and 150 nm Nb/ (1 nm Cu/0.5 nm Nb)6/1 nm Cu. Both film sets were capped with 5 nm Cu/50 nm Nb. Magnetic results show reduced switching distributions in patterned arrays measured at near liquid Helium temperature (~ 10 K), with the incorporation of the (1 nm Cu/0.5 nm Nb)6/1 nm multilayer. In electrical devices, the critical current (Ic) through the CFB layer decays exponentially with increasing ferromagnetic layer thickness and shows a dip in Ic at 0.8 nm, characteristic of a change in the equilibrium Josephson phase in an S/F/S structure.
Josephson junctions with ferromagnetic layers are vital elements in a new class of cryogenic memory devices. One style of memory device contains a spin valve with one hard magnetic layer and one soft layer. To achieve low switching fields, it is advantageous for the soft layer to have low magnetization and low magnetocrystalline anisotropy. A candidate class of materials that fulfills these criteria is the Pd$_{1-x}$Fe$_{x}$ alloy system with low Fe concentrations. We present studies of micron-scale elliptically-shaped Josephson junctions containing Pd$_{97}$Fe$_{3}$ layers of varying thickness. By applying an external magnetic field, the critical current of the junctions are found to follow characteristic Fraunhofer patterns. The maximum value of the critical current, extracted from the Fraunhofer patterns, oscillates as a function of the ferromagnetic barrier thickness, indicating transitions in the phase difference across the junction between values of zero and $pi$.
Complex oxides exhibit a variety of unusual physical properties, which can be used for designing novel electronic devices. Here we fabricate and study experimentally nano-scale Superconductor/ Ferromagnet/Superconductor junctions with the high-Tc cuprate superconductor YBa2Cu3O7 and the colossal magnetoresistive (CMR) manganite ferromagnets LaXMnO3 (X: Ca or Sr). We demonstrate that in a broad temperature range the magnetization of a manganite nanoparticle, forming the junction interface, switches abruptly in a mono-domain manner. The CMR phenomenon translates the magnetization loop into a hysteretic magnetoresistance loop. The latter facilitates a memory functionality of such a junction with just a single CMR ferromagnetic layer. The orientation of the magnetization (stored information) can be read out by simply measuring the junction resistance in an applied magnetic field. The CMR facilitates a large read-out signal in a small applied field. We argue that such a simple single layer CMR junction can operate as a memory cell both in the superconducting state at cryogenic temperatures and in the normal state up to room temperature.
Andreev reflection (AR) in ferromagnet/superconductor junctions is an indispensable spectroscopic tool for measuring spin polarization. We study theoretically how the presence of a thin semiconducting interface in such junctions, inducing Rashba and Dresselhaus spin-orbit coupling, modifies AR processes. The interface gives rise to an effective momentum- and spin-dependent scattering potential, making the probability of AR strongly asymmetric with respect to the sign of the incident electrons transverse momenta. This skew AR creates spatial charge carrier imbalances and transverse Hall currents flow in the ferromagnet. We show that the effect is giant, as compared to the normal regime. We provide a quantitative analysis and a qualitative picture of this phenomenon, and finally show that skew AR also leads to a widely tunable transverse supercurrent response in the superconductor.
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